RJK0452DPB Search Results

RJK0452DPB Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RJK0452DPB-00#J5		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 45A LFPAK	Original	PDF		7

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Renesas Electronics Corporation


Renesas Electronics Corporation RJK0452DPB-00-J5 MOSFET N-CH 40V 45A LFPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	RJK0452DPB-00-J5	Cut Tape	1,669		1	1 $3.35 10 $2.18 100 $1.52 1000 $1.30 10000 $1.30	Buy Now
	RJK0452DPB-00-J5	Digi-Reel	1,669		1	1 $3.35 10 $2.18 100 $1.52 1000 $1.30 10000 $1.30	Buy Now
	RJK0452DPB-00-J5	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1.06	Buy Now
Vyrian	RJK0452DPB-00-J5		562			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation RJK0452DPB-00#J5 MOSFETs NOT AVALIBLE THROUGH MOUSER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	RJK0452DPB-00#J5					1 $3.11 10 $2.17 100 $1.47 1000 $1.21 10000 $1.06	Get Quote
Avnet Asia	RJK0452DPB-00#J5			18 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote

RJK0452DPB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Datasheet RJK0452DPB 40V, 45A, 3.5m max. Silicon N Channel Power MOS FET Power Switching R07DS0074EJ0200 Rev.2.00 Apr 09, 2013 Features •     Low on-resistance RDS on = 2.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free	Original	RJK0452DPB R07DS0074EJ0200 PTZZ0005DA-A	PDF
RJK0452 Contextual Info: Preliminary Datasheet RJK0452DPB R07DS0074EJ0102 Previous: REJ03G1764-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free	Original	RJK0452DPB R07DS0074EJ0102 REJ03G1764-0101) PTZZ0005DA-A Ava9044 RJK0452	PDF
Contextual Info: Preliminary Datasheet RJK0452DPB R07DS0074EJ0102 Previous: REJ03G1764-0101 Rev.1.02 Jul 30, 2010 Silicon N Channel Power MOS FET Power Switching Features •     Low on-resistance RDS(on) = 2.8 m typ. (at VGS = 10 V)  Pb-free  Halogen-free	Original	RJK0452DPB R07DS0074EJ0102 REJ03G1764-0101) PTZZ0005DA-A cur9044	PDF
RJH60F7 Abstract: rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652 Contextual Info: Solutions for Enhanced Power Management Power MOSFETs, TRIACs, Thyristors, and IGBTs System designs that save energy have valuable marketing advantages. Yet new products typically must deliver increasingly complex functionality and higher levels of performance — a combination that tends to	Original	RJP6085DPN O-220AB RJP6085DPK RJH6085BDPK RJH6086BDPK RJH6087BDPK RJH6088BDPK RJH60F7 rjh60f5 RJH60 RJH60F4 RJH60F7A BCR25KR RJH60F6 rjh1cf7 rjh60d2 RJK0652	PDF
RJK03P7DPA Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 Contextual Info: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position	Original	0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1	PDF