R800C Search Results

cd 4560

Abstract: js 1200
Contextual Info: Ü1ESTC0DE SEMICONDUCTORS a^E » • T7D'ic1SS 00G2453 2 ■ ÜIESBT - 2 S ~ 2 . WESTCODE SEMICONDUCTORS R800CH12-18 Capsule Thyristor The R800C series thyristors feature low turn-on loss, regenerative and interdigitated gating on a 53mm diameter wafer

R290T

Abstract: R280T F280T R170C R290C F160c
Contextual Info: an A M P com pany Ferropill Stripline Isolators V2.00 Description Features M agnetically Shielded Small size, light w eight Low cost Choice o f round, flange or square package Standard and octave bandwidths M/A-COM’s m agnetically shielded circulators and isola­

thyristor code

Abstract: R350CH D350CH 101A237 R355C 60598-1 R180CHX R185CHX R190CHX R210CHX
Contextual Info: D istributed Gate Thyristors ~ All types Type ^RRM Tq 200V/IJS Range I TRM A 50% Dut!/ Cycle Tsink 55°C Sine wave Square wave 100 A/jisec av T - 55°C di/dt I trms Rep/Non- 25°C Rep It I t SM(1) 25°C Vr=s 60% IlSM(2) VRss10V ^RRM Tj 125°C Tj 125°C (Note 3)

Contextual Info: W estcode “D" and “R ” series of fast switching thyristors have a regenerative interdigitated gate structure to ensure low switching losses and high di/dt performance. Low reverse recovery charge values, combined with the low forward switching losses, make these devices

r1448

Abstract: R216SH10-12 R1863CH R185SH10-12 R0633YS R355SH R270S R500CH20-28 R216SH R600CH18-21
Contextual Info: Old Part Number PDF Data Sheet Available FAST SWITCHING DEVICE -Distributed Gate Thyristors - Capsule Type VDRM VRRM Range New Part Number Tq 200V/µ µs ITav Ths Note 3 Sine Wave Typical (V) (µ µ s) (A) diT/dt Rep/Non-Rep o ITRM (A) 50% Duty Cycle TSINK 55 C

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

tfk U 2550

Abstract: TFK 490 R325CH tfk 830 tfk 2550 tfk 731 R355CH tfk 810 TFK 242 R210CH
Contextual Info: D is trib u te d G ate T h y ris to rs -— All types Type v DRM/ ^RRM Tq 200V/ps Range ^Tav ^TR j A 50 % Duty Cycle T1 S IN K Jcici °C J s ne wav e Tte 55°C Sq uare m ive 1C0 A/|js ec di/dt I-T R M S Rep/IMon- 25°C It ItSM(1) 25°C VR=s 60% Rep I tSM(2)

R350CH

Abstract: R210CHX D315C
Contextual Info: D istributed Gate Thyristors ~ All types Type V RRM Range ITR„ A 50 % Duty Cycle T"sINK 5 5 °C S ne wav e Sq uare mive 1C 0 A/ps 3C Tq IT, 200V/IJS T„ 55°C (Typical di/dt I-TRMS Rep/Non- 25°C Rep It I tSM(2) I tsm(i ) 25°C V r=s 60% VRss10V ^RRM (Typical

D350CH

Abstract: R400CH R610CH22-25 R1200CH R185CH08-12 R355CH R190CH R325CH
Contextual Info: Product Line of Distributed Gate Thyristors WiSTCODE A n D IX Y S C o m pany Recognised as the worldwide leader in distributed gate thyristor technology. Devices with blocking voltages to 4.5kV and currents to 3.7kA, with tq from 10 to 300|is. The unique distributed gate design and lifetime control features

thyristor code

Abstract: R400CH 60598-1 10KHZ R180CHX R185CHX R190CHX R200CHX R210CHX R216CHX
Contextual Info: WESTCODE SEMICONDUCTORS 3TE ] Westcode “D ” and “ R ” series of fast-switching thyristors have a regenerative interdigitated gate structure to ensure low switching losses and high di/dt performance. Low reverse recovery charge values, combined with the

ata 2398

Abstract: IC ATA 2398 WESTCODE SW 1976 R325CHX r400ch AL 1450 DV TBA 1205
Contextual Info: Shortform Design Guide WESLS001 Issue 7 W estcod e “D ” and “R ” se rie s of fast sw itching thyristors have a regenerative interdigitated gate structure to ensure low sw itching lo sse s and high di/dt perform ance. Low reverse recovery charge values, com bined with the

thyristor code

Abstract: 6059B-1 R350 R180CHX R185CHX R190CHX R200CHX R210CHX R216CHX R219CHX
Contextual Info: Distributed Gate Thyristors ~ All types Type vDflM/ Tq ^Tav ^RRM 200V/|JS T. Range I Trm A 50% Dut}f Cycle Tsink 55°C Sine wave Square wave 100 A/jisec 55°C di/dt I trms Rep/Non- 25°C It I tSM(1) 25°C V r=s 60% Rep VR^ 10 V ^RRM (Note 3) Tj 125°C Tj 125°C