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    R07DS0847EJ0100 Search Results

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    RJQ6008

    Abstract: RJQ6008DPM-00 RJQ6008DPM
    Contextual Info: Preliminary Datasheet RJQ6008DPM 600V - 10A - IGBT and Diode High Speed Power Switching R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJQ6008DPM R07DS0847EJ0100 PRSS0005ZB-A RJQ6008 RJQ6008DPM-00 RJQ6008DPM PDF

    RJQ6008

    Contextual Info: Preliminary Datasheet RJQ6008DPM 600V - 10A - IGBT and Diode High Speed Power Switching R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode in one package


    Original     		RJQ6008DPM R07DS0847EJ0100 PRSS0005ZB-A RJQ6008 PDF