Q0173 Search Results

M67710H

Abstract: M67710
Contextual Info: H 11Ô B S Q0173S4 b27 • M IT S U I. RF POWE« MOOOLE M67710H 150-175MHz, 9.6V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm 45+1 42 + 1 2 -R Î.5 ± 0 .3 Z . € ¥ ir> o +f _ ? «0.4 ± 0.2 5+ 1 9±1 9±1 PIN : 5 + 1 8.5 + 1 P in : RF INPUT

M57797SL

Contextual Info: bEHTÖB'i Q0173Ü2 55e! • MITSUBISHI RF POWER MODULE M57797SL 350-380MHZ, 12.5V, 7W, FM PORTABLE RADIO ABSOLUTE MAXIMUM RATINGS Te —25*0 unless otherwise noted Symbol Vcc V bb Icc PinCmax) Po(max) Tc(OP) Tstg Parameter Supply voltage Base bias Total current

AD7541

Abstract: E20A
Contextual Info: ANALOG DEVICES INC IbE D • ANALO G D E V IC E S ► OflltflDQ Q0173CH 5 ■ CMOS 12-Bit Monolithic Multiplying DAG _ AD7541 1 Scope. This specification covers the detail requirements for a 12-bit monolithic CMOS multiplying digital-to-analog

Contextual Info: ^ 2 4 ^ 2 ^ Q017323 TS3 • MITSUBISHI RFPOWER MODULE M67703H 450-470MHZ, 12.5V, 50W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM PIN : Rn VCC1 ®VCC2 ® PO ®GND : RF INPUT : 1st. DC SU P P L Y : 2nd. DC SU P P L Y : RF O U TPU T : FIN

TLM8202

Contextual Info: TO S H I B A O I S C R E T E / O P T O } 9097250 T O S H IB A TT D IS C R E T E /O P T O D E « ^0^7250 Q017303 99D 17303 D T - M l - ‘h l ’ TLM8202 2 0 -P 0 IN T 2-CHANNEL BAR PO INT DISPLAY • State of Displays 20-Point (Green : 12-Point, Yellow : 4-Point, Red : 4-Point), 2 Channel Display.

M67705l

Contextual Info: b 2 4 ci fl Stí DD1733E Thb • MITSUBISHI RF POWER MODULE M67705L 400-430MHZ, 9.6V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM 45±1 42±1 2 - R 1 . 5 ± 0 .3 Z . ¥ o _ +1 01 4>0 .4 ± 0.2 5 ±1 9+1 9+ 1 P IN : 5 + 1 8 .5 + 1 P in

Contextual Info: it N AMER PHILIPS/DISCRETE 25E D bbSHTBl QQ17373 3 • I3 Jl U U 11N4728A to 1N4761A T -U -1 3 X VOLTAGE REGULATOR DIODES The series consits o f 34 types w ith nominal working voltages ranging from 3.3 to 75 V. MECHANICAL DATA Dimensions in mm Fig. 1 DO-41 SOD66 .

Contextual Info: 551ô4bô 0017342 172 Final Electrical Specifications LTC1624 High Efficiency SO-8 N -Channel Switching Regulator C ontroller lu m TECHNOLOGY DCSCRICTIOn FenTURcs • N-Channel MOSFET Drive ■ Implements Boost, Step-Down, SEPIC and Inverting Regulators ■ Wide V|n Range: 3.5V to 36V Operation

Contextual Info: Ordering number: EN2677C Monolithic Linear IC LA4700N No. 2677C SA iYO I 2-Channel 12W AF Power Amplifier for Car Stereos Functions • • • • • • • Package Dimensions unit : mm Standby switch function built in Pop noise suppressor built in Thermal shutdown circuit built in

Contextual Info: CXP5070 SONY. CM O S 4-bit 1 Chip Microcomputer Piggyback type Description CXP5070 is a CMOS 4-bit 1 chip microcomputer of piggyback/evaluator combined type which has been developed for functional evaluation of the CXP5076/CXP5078. Features • Instruction cycle

l6703

Abstract: L6283 l6278 L6284 L6916 l6262 A1658 SVC 561 14 C3041 A1671
Contextual Info: RVCT 3.1 Build Tools - Errors and Warnings March 2008 Introduction This document lists the errors and warning messages that can be generated by the Build Tools of the ARM RealView Compilation Tools RVCT version 3.1, including patches. RVCT 3.1 is provided with RVDS

L6284

Abstract: A1273 L6283 a1046 L6278 L6559 l6262 a1583e A1154 a1273* transistor
Contextual Info: RVCT 2.0 Build Tools - Errors and Warnings Release 1.0 – 27th August 2003 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 2.0 and later. If you are using ADS ADS 1.2, 1.1 or 1.0.1 or RVCT 1.2

ati exm 321

Abstract: sd 7401 xlxxxx DSP1610 TMs 1122 AB14 DSP1618 CXR 726 Microprocessor 100-BQFP aop 741
Contextual Info: AT&T Data Sheet May 1995 •= ? ■Microelectronics DSP1618 Digital Signal Processor 1 Features ■ Optimized for digital cellular applications with a bit manipulation unit and an error correction coprocessor for higher signal coding efficiency ■ 20 ns, 25 ns, and 30 ns instruction cycle times at

aS3131

Abstract: 1N746A 1N747A 1N748A 1N749A 1N750A 1N751A 1N759A air temperature 1N753A
Contextual Info: tr - N AMER P H IL IP S/ DI SC RE TE bfc,5313Ì 001731*7 a 2SE B 1N746A to 1N759A T-ll~07 i ; 400 mW ZENER DIODES , Silicon planar diodes in DO-35 packages intended for use as low power voltage stabilizers or voltage references. The series consists of 14 types with nominal working voltages ranging from 3.3 to 12 V.

Contextual Info: Ö23b32ü 0017300 1 32E D ISIP NPN Silicon Switching Transistor SXT 2222 A SIEMENS/ SPCLi SEMICONDS r - s s '- if • High current gain: 0.1 to 50 0 m A • Low collector-em itter saturation voltage Type M a rk in g O rd e rin g c o d e fo r v e rs io n s in b u lk

Contextual Info: 35E D • 023^320 0017305 0 « S I P SIPMOS P Channel MOSFET SP0610T SIEMENS/ SPCL-. SEMICONDS _3.5" • SIPM OS - enhancement mode • Drain-source voltage Voi = -60V • Continuous drain current I D = -0.13A • Drain-source on-resistance

MPS2222

Abstract: MPS2222A
Contextual Info: ft N AMER PHILIPS/DISCRETE - - i - - bbsaiai []Qi?3Qfei T MPS2222 MPS2222A 25E D T - 2 7 - / 5 * SILICON PLANAR EPITAXIAL TRANSISTORS NPN silicon planar epitaxial transistors in a plastic TO-92 envelope primarily intended for linear and switching applications.

C917

Abstract: 2N3791 2N3792 G017375 2N3792, 2N3715 2N3716
Contextual Info: G E SOLID STATE Öl DE | 3075001 0017373 0 | •-U1 3875061 G_E SOLID STATE 01E 17373 D T-33- G eneral-Purpose Power Transistors File Num ber 1059 Silicon P -N -P Epitaxial-Base 2N3791, 2N3792

l6703

Abstract: asm 1442 L6916E SVC 561 14 L6232E A1659 a1718 a1694 C2068 STR 6765
Contextual Info: RVCT 3.0 SP1 Build Tools - Errors and Warnings Last updated March 2008 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM RealView Compilation Tools 3.0, 3.0 Service Pack 1, and subsequent 3.0 patches. If you are using ADS

TAA 981

Abstract: MSM5117400
Contextual Info: O K I Semiconductor MSM5 117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM5117400 is OKI's CMOS silicon gate process technology.

Contextual Info: 19-1268; Rev 0; 8/97 Low-Voltage, Precision Step-Down Controller for Portable CPU Power _ G eneral Description _A pplications ♦ ±1% DC Accuracy Adjustable Mode ♦ Output Overvoltage Crowbar Protection ♦ Output Undervoltage Shutdown

CF739 R

Abstract: CF739 siemens gaas fet
Contextual Info: 32E D • 023ti3SQ 0G17342 1 H S I P GaAsFET SIEMENS/ SPCL*. SEMICONDS CF739 T 'S I- a S ' • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain

Contextual Info: 32E D • fl23fc.320 ÜQL73L3 S « S I P PNP Silicon Switching Transistor SXT 2907 A _ SIEMENS/ SPCL-, SEMICONDS _ * f 3 * 7 -/* • • High current gain: 0.1 to 500 mA Low collector-emitter saturation voltage Type M arking Ordering code fo r

Contextual Info: BEE d GaAs MMIC • • • • • • • • • • 023b3E0 SIEMENS/ 0Gl?3bQ 3 «SIP SPCLi SEMICONDS CGY50 Single-stage, monolithic microwave IC M M IC amplifier Cascadable 50 i i gain block Application range: 100 MHz to 3 GHz Third order intercept point 30 dBm typical at 1.8 GHz