POWER20 Search Results

Contextual Info: PGG205-83 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: ML4941 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)27G Frequency Max. (Hz)32G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage6.5 I(Oper.) Typ.(A) Oper. Current1.6 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: DGB8241 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)24.5G Frequency Max. (Hz)26.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage5.0 I(Oper.) Typ.(A) Oper. Current220m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: DC1204C Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz) Frequency Max. (Hz)5.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current130m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: VAO32EN22 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)6.0G Frequency Max. (Hz)8.0G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage110 I(Oper.) Typ.(A) Oper. Current33m Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: DGB8244 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)24.5G Frequency Max. (Hz)26.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage5.0 I(Oper.) Typ.(A) Oper. Current220m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: DGB8255 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)26.5G Frequency Max. (Hz)40G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage5.0 I(Oper.) Typ.(A) Oper. Current300m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: MS856B Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)15G Frequency Max. (Hz)18G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: PGG205-82 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.4.0 V(Oper.) Nom.(V) Oper. Voltage90 I(Oper.) Typ.(A) Oper. Current Semiconductor MaterialSilicon Package StyleScrew

Contextual Info: VAO12EN21 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage80 I(Oper.) Typ.(A) Oper. Current45m Semiconductor MaterialSilicon Package StylePill-C

Contextual Info: DGB8532 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)12.4G Frequency Max. (Hz)16G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage8.0 I(Oper.) Typ.(A) Oper. Current700m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: DGB8213 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)4.0G Frequency Max. (Hz)8.2G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage12 I(Oper.) Typ.(A) Oper. Current150m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: VSX9251S2 Diodes Pulse-Mode IMPATT Diode P o Min.(W) Output Power20 Frequency Min. (Hz)8G Frequency Max. (Hz)10G Efficiency Min.21 V(Oper.) Nom.(V) Oper. Voltage64 I(Oper.) Typ.(A) Oper. Current1.5 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: DGB8214 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)4.0G Frequency Max. (Hz)8.2G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage12 I(Oper.) Typ.(A) Oper. Current150m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: VAO12EN22 Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power200m Frequency Min. (Hz)8.0G Frequency Max. (Hz)12.4G Efficiency Min.5.5 V(Oper.) Nom.(V) Oper. Voltage80 I(Oper.) Typ.(A) Oper. Current45m Semiconductor MaterialSilicon Package StylePill-B

Contextual Info: GC5647A Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)4.0G Frequency Max. (Hz) Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current530m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: DGB8211 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)4.0G Frequency Max. (Hz)8.2G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage12 I(Oper.) Typ.(A) Oper. Current150m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: VSQ9119S2 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz) Frequency Max. (Hz)44GÂ Efficiency Min.10 V(Oper.) Nom.(V) Oper. Voltage11 I(Oper.) Typ.(A) Oper. Current200m Semiconductor MaterialInP Package StyleScrew Mounting StyleT

Contextual Info: 1 Thin-Film Technology ® Accu-F / Accu-P Thin-Film RF/Microwave Capacitors 5 Accu-F® / Accu-P® Thin-Film Technology THE IDEAL CAPACITOR 1 The non-ideal characteristics of a real capacitor can be ignored at low frequencies. Physical size imparts inductance

cn/A/U 237 BG

Contextual Info: www.avx.com AVX RF Microwave Products Version 15.1 AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major Thin Film RF/Microwave capacitor, inductor, directional coupler and low pass filter and

EN25q

Abstract: EN25Q32 EN25Q32A FLASH 16 Mbit cFeon
Contextual Info: EN25Q32A EN25Q32A 32 Megabit Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Software and Hardware Write Protection: - Write Protect all or portion of memory via software - Enable/Disable protection with WP# pin • Single power supply operation

srf 1714

Abstract: Srf 1427 Transformer 8 948 411 098 Sn90-Pb10 47056 107E 204D walkie-talkie srf 1616 AVX 620 102M
Contextual Info: Accu-F / Accu-P® Thin-Film Technology THE IDEAL CAPACITOR 1 The non-ideal characteristics of a real capacitor can be ignored at low frequencies. Physical size imparts inductance to the capacitor and dielectric and metal electrodes result in resistive losses, but these often are of negligible effect on the

am29203 "evaluation board"

Abstract: L0512 MV8000 TTL catalog CL1101 8038 ic tester circuit diagram tl 2345 ml gcr encoder parallel bus arbitration 30GRAMMABLE
Contextual Info: PROGRAMMABLE ’ROGRAMMABLE 30GRAMMABLE L DGRAMMABLE LG 3RAMMABLE LOG ÏRAMMABLE LOGI ÌAMMABLE LÄGIC a Advanced Micro Devices Programmable Array Logic Handbook Prepared by the Product Planning and Applications Staff at Advanced M icro Devices, Inc. Brad Kitson, Editor

SMD CAPACITORS 107E

Abstract: CDR11BP hewlett packard semiconductor cross reference smd code marking 561B 6647a SMD transistor 431a TRANSISTOR B560 uhf wireless mic circuits CDR11BP datasheet lambda IC 101
Contextual Info: A KYOCERA GROUP COMPANY AVX RF Microwave/Thin-Film Products AVX Microwave Ask The World Of Us As one of the world’s broadest line multilayer ceramic chip capacitor suppliers, and a major microwave ceramic capacitor manufacturer, it is our mission to provide First In Class Technology,