PU421 Search Results

Contextual Info: Power Transistor Arrays PUB4213 PU4213 , PUB4513 (PU4513) Silicon PNP epitaxial planar type For power amplification/switching Complementary to PUB4113 (PU4113), PUB4413 (PU4413) Unit: mm • Features ■ Absolute Maximum Ratings TC = 25°C Symbol Rating Unit

PU4111

Abstract: PU4211 PU4411 PU4511 PUB4111 PUB4211 PUB4411 PUB4511
Contextual Info: Power Transistor Arrays PUB4211 PU4211 , PUB4511 (PU4511) Silicon PNP epitaxial planar type For power amplification Complementary to PUB4111 (PU4111), PUB4411 (PU4411) Unit: mm 25.3±0.2 9.5±0.2 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE

PU4112

Abstract: PU4212 PUB4112 PUB4212
Contextual Info: Power Transistor Arrays PUB4212 PU4212 Silicon PNP epitaxial planar type For power switching Complementary to PUB4112 (PU4112) Unit: mm 25.3±0.2 4.0±0.2 • Absolute Maximum Ratings TC = 25°C 0.5±0.15 1.0±0.25 0.5±0.15 2.54±0.2 9 x 2.54 = 22.86±0.25

Contextual Info: Power Transistor Arrays PU3215, PU4215, PU4515 PU3215, PU4215, PU45T5 Package Dimensions Unit*, mm 4.2max. •H \ P U 3215 Silicon NPN Epitaxial Planar Type 20.5max. Power Amplifier, Switching Complementary Pair with PU3115, PU4115, PU4415 • Features □

Contextual Info: Power Transistor Arrays PU3214, PU4214, PU4514 Silicon NPN Epitaxial Planar Type PU3214, PU4214, PU4514 Package Dimensions PU3214 U n it! m m 4.2max. 20.5max. I-h - n E o Power Amplifier, Switching Complementary Pair with PU3114, PU4114, PU4414 0.8+0.25IF

Contextual Info: PU3112, PU4112, PU4412 Pow er T ra n sisto r A rrays PU3112, PU4112, PU4412 Package Dimensions U n it: m m PU3112 4 .2 m a x . 2 0 .5 m a x . Silicon NPN Epitaxial Planar Type Power Amplifier, Switching Complementary Pair with PU3212, PU4212, PU4512 0.8 + 0 ,

Contextual Info: Power Transistor Arrays PU3113, PU4113, PU4413 PU3113, PU4113, PU4413 Package D im ensions PU3113 U n it: m m Silicon NPN Epitaxial Planar Type 4.2max. 20.5n i Pow er A m plifier, Sw itching C om plem enta ry Pair with PU3213, PU4213, PU4513 0.8 4Û -0 5±0 15

PU3112

Abstract: PU3212 PU4112 PU4212 PU4412 PU4512 6 "transistor arrays" ic
Contextual Info: Power Transistor Arrays PU3212, PU4212, PU4512 PU3212, PU4212, PU4512 Package D im ensions U nitlm m PU3212 4.2max. -t- 20.5max. Silicon NPN Epitaxial Planar Type £ o Pow er A m plifier, S w itching C om plem entary Pair w ith PU3112, PU4112, PU4412 Ui‘¿

PU3211

Abstract: PU3111 PU4111 PU4211 PU4411 PU4511
Contextual Info: Power Transistor Arrays P U 3 2 1 1 , P U 4 2 1 PU3211, PU4211, PU4511 , 1 Package Dim ensions P 1 1 4 5 1 1 Unit! mm PU3211 Silicon NPN Epitaxial Planar Type 4.2max.> 20.5 max. £ o Power Amplifier, Switching Complementary Pair with P U 3.111, PU41 l i , P U 4 4 1 1

PU4111

Abstract: PU4211 PU4411 PU4511 PUB4111 PUB4211 PUB4411 PUB4511
Contextual Info: Power Transistor Arrays PUB4111 PU4111 , PUB4411 (PU4411) Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUB4211 (PU4211), PUB4511 (PU4511) Unit: mm M Di ain sc te on na tin nc ue e/ d • Features 25.3±0.2 Collector-base voltage (Emitter open)

PU4114

Abstract: PU4214 PUB4114 PUB4214
Contextual Info: Power Transistor Arrays PUB4114 PU4114 Silicon NPN triple diffusion planar type For power amplification and switching Complementary to PUB4214 (PU4214) Unit: mm M Di ain sc te on na tin nc ue e/ d • Features 25.3±0.2 4.0±0.2 1.65±0.2 Solder Dip 5.3±0.5

PU3111

Abstract: PU3211 PU4111 PU4211 PU4411 PU4511 PU321
Contextual Info: P o w e r T ra n s is to r A rra y s PU3211, PU4211, PU4511 PU3211, PU4211, PU4511 Package Dim ensions PU3211 Silicon N P N Epitaxial Planar Type Power A m plifier, Sw itching C om plem entary Pair w ith PU3111, PU4111, P U 4411 444—0 5 + 0.15 —+ 4 — 1 .0 1 0 2 5

PU421

Abstract: 1026A PS 1025A PU3113 PU3213 PU4113 PU4213 PU4413 PU4513 6 "transistor arrays" ic
Contextual Info: Power Transistor Arrays P U 3213, P U 4213, P U 4513 PU3213, PU4213, PU4513 P a c k a g e D im e n s io n s PU3213 P o w e r A m p lifier, S w itch in g C o m p le m e n ta ry P a ir with P U 3 1 1 3 , P U 4 1 1 3 , P U 4 4 1 3 • F e a tu re s • • •

PU3112

Abstract: PU3212 PU4112 PU4212 PU4412 PU4512 6 "transistor arrays" ic
Contextual Info: Power Transistor Arrays PU3212, PU421 2, PU451 2 PU 3212, PU4212, PU4512 P a c k a g e D im e n s io n s U nitlm m P U 3212 Silicon NPN Epitaxial Planar Type 4. 2m ax . 20 .5m ax . -t- £ o P o w e r A mplifier, Switchin g C o m p l e m e n ta r y Pair with P U 3 1 1 2 , P U 4 1 1 2 , P U 4 4 1 2

Contextual Info: Pow er T ra n sisto r A rrays PU3114, PU4114, PU4414 PU3114, PU4114, PU4414 Silicon NPN Epitaxial Planar Type Package Dimensions PU 3114 U nit Im m I 4.2max. 20 5n Power Amplifier, Switching Complementary Pair with PU3214, PU4214, PU4514 ! E ol ori s 0 8 ± 0.25jj^

PU3119

Abstract: PU3219 PU4119 PU4219 PU4419 PU4519
Contextual Info: Power Transistor Arrays PU3119, PU4119, PU4419 PU3119, PU4119, PU4419 Silicon NPN Triple-Diffused Planar Type Package Dimensions PU3119 U n i t ’. m m 4.2max. 20.5max. Power Amplifier, Switching Domplementary Pair with PU3219, PU4219, PU4519 Iflililí If IfIf °-8±0'S

PU3119

Abstract: DARLINGTON TRANSISTOR ARRAYS 2A PU3219 PU4119 PU4219 PU4419 PU4519
Contextual Info: Power Transistor Arrays PU3219, PU4219, PU4519 PU3219, PU4219, PU4519 • Package Dimensions Silicon NPN Epitaxial Planar Darlington Type PU3219 Unit: mm Power Amplifier, Switching Complementary Pair with PU3119, PU4119, PU4419 ■Features ^fl-0.5 + 0.15 -i-*-1.0±0.25

Contextual Info: Power Transistor Arrays PUB4210 PU4210 , PUB4510 (PU4510) Silicon PNP epitaxial planar type For power amplification Complementary to PUB4110 (PU4110), PUB4410 (PU4410) Unit: mm • Feature 25.3±0.2 9.5±0.2 1.65±0.2 Solder Dip 5.3±0.5 4.4±0.5 ■ Absolute Maximum Ratings TC = 25°C

Contextual Info: Power Transistor Arrays PUB4212 PU4212 Silicon PNP epitaxial planar type For power switching Complementary to PUB4112 (PU4112) Unit: mm 25.3±0.2 4.0±0.2 1.65±0.2 Solder Dip 5.3±0.5 4.4±0.5 9.5±0.2 • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Power Transistor Arrays PUB4213 PU4213 , PUB4513 (PU4513) Silicon PNP epitaxial planar type For power amplification/switching Complementary to PUB4113 (PU4113), PUB4413 (PU4413) Unit: mm • Features 9.5±0.2 • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Power Transistor Arrays PUB4119 PU4119 , PUB4419 (PU4419) Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUB4219 (PU4219), PUB4519 (PU4519) Unit: mm • Features 25.3±0.2 9.5±0.2 1.65±0.2 Solder Dip

PU4112

Abstract: PU4212 PUB4112 PUB4212
Contextual Info: Power Transistor Arrays PUB4212 PU4212 Silicon PNP epitaxial planar type For power switching Complementary to PUB4112 (PU4112) M Di ain sc te on na tin nc ue e/ d Unit: mm 25.3±0.2 4.0±0.2 1.65±0.2 Solder Dip 5.3±0.5 4.4±0.5 9.5±0.2 • Low collector-emitter saturation voltage VCE(sat)

PU4119

Abstract: PU4219 PU4419 PU4519 PUB4119 PUB4219 PUB4419 PUB4519
Contextual Info: Power Transistor Arrays PUB4119 PU4119 , PUB4419 (PU4419) Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUB4219 (PU4219), PUB4519 (PU4519) M Di ain sc te on na tin nc ue e/ d Unit: mm • Features 25.3±0.2

PU4110

Abstract: PU4210 PU4410 PU4510 PUB4110 PUB4210 PUB4410 PUB4510
Contextual Info: Power Transistor Arrays PUB4110 PU4110 , PUB4410 (PU4410) Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUB4210 (PU4210), PUB4510 (PU4510) Unit: mm M Di ain sc te on na tin nc ue e/ d • Features 25.3±0.2 Collector-base voltage (Emitter open)