PTFC260362SC Search Results

Contextual Info: PTFC260362SC Thermally-Enhanced High Power RF LDMOS FET 32 W, 28 V, 2496 – 2690 MHz Description The PTFC260362SC is a 32-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. Features include input and output matching,

Contextual Info: PTFC260362SC Thermally-Enhanced High Power RF LDMOS FET 32 W, 28 V, 2496 – 2690 MHz Description Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance shown in Advance Specifications

PTFB090901EA

Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB

BGU7073

Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by