Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PTF040551E Search Results

    PTF040551E Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PTF040551E
    		Infineon Technologies Transistor Mosfet N-CH 65V 0.45A 3(30265) Original PDF 116.34KB 4
    PTF040551EV1
    		Infineon Technologies Transistor Mosfet N-CH 65V 3(30265) Original PDF 116.34KB 4

    PTF040551E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PTF040551E

    Abstract: PTF040551F 55-watt
    Contextual Info: Preliminary PTF040551E PTF040551F Thermally Enhanced High Power RF LDMOS FETs 55 W, 450 – 500 MHz Description The PTF040551E and PTF040551F are thermally-enhanced, 55-watt, internally matched GOLDMOS FETs intended for CDMA applications in the 450 to 500 MHz band. Full gold metallization ensures excellent device


    Original     		PTF040551E PTF040551F PTF040551E PTF040551F 55-watt, PTF040551E* PTF040551F* 55-watt PDF

    DS 469 ADJ

    Abstract: type 103 capacitor, 2kv RF
    Contextual Info: PTF040551E PTF040551F Thermally Enhanced High Power RF LDMOS FETs 55 W, 450 – 500 MHz Description The PTF040551E and PTF040551F are thermally-enhanced, 55-watt, internally matched GOLDMOS FETs intended for CDMA applications in the 450 to 500 MHz band. Full gold metallization ensures excellent device


    Original     		PTF040551E PTF040551F 55-watt, PTF040551F* IS-95 DS 469 ADJ type 103 capacitor, 2kv RF PDF