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    PTAB182002FC Search Results

    PTAB182002FC Datasheets (4)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PTAB182002FC-V1-R0
    		Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC RF FET LDMOS 190W H-37248-4 Original PDF 417.91KB
    PTAB182002FCV1R0XTMA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC RF FET LDMOS 190W H-37248-4 Original PDF 440.44KB
    PTAB182002FC-V1-R250
    		Cree/Wolfspeed Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 417.91KB
    PTAB182002FCV1R250XTMA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC AMP RF LDMOS Original PDF 440.44KB

    PTAB182002FC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TL256

    Abstract: TL160 TL247
    Contextual Info: PTAB182002FC Thermally-Enhanced High Power RF LDMOS FET 190 W, 28 V, 1805 – 1880 MHz Description The PTAB182002FC is a 190-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output


    Original     		ptab182002fc190-watth-37248-4tl256+2tl160tl247 PDF

    PTFB090901EA

    Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB


    Original     		ptva093002tc960mhz758mhzpxac201602fc+62025mhzh-49248h-4h-37248-4400mhz2700mhzptfb090901ea PDF