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    PN108CL Search Results

    PN108CL Datasheets (5)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PN108CL
    Panasonic Silicon NPN Phototransistor Original PDF 52.75KB 3
    PN108CL
    Unknown The Optical Devices Data Book (Japanese) Scan PDF 435.39KB 15
    PN108CL
    Panasonic Si NPN phototransistor for optical control systems. Scan PDF 238KB 5
    PN108CL
    Panasonic Photo Detectors / Photo Couplers Scan PDF 99.81KB 1
    PN108CL
    Panasonic Silicon NPN Phototransistor Scan PDF 91.6KB 2

    PN108CL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    lu110

    Abstract: PN108CL
    Contextual Info: Panasonic Phototransistors PN108CL Silicon NPN Phototransistor U nit : mm For optical control systems • Features • H ig h se n sitiv ity : I C e l = 3-5 m A (m in .) (at L = 5 0 0 lx ) . 3 -00.45+ 0.05 • W id e d irection al se n sitiv ity for e a sy u se


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    pn108cl2856klu110 PDF

    Contextual Info: Phototransistors PNZ108CL PN108CL Silicon planar type Unit: mm 3.0±0.3 For optical control systems 0.2±0.05 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.) • Signal mixing capability using base pin


    Original
    pnz108clpn108cl PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 3.0±0.3 For optical control systems 0.2±0.05 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use


    Original
    2002/95/ecpnz108clpn108cl PDF

    Contextual Info: Panasonic Phototransistors PN108CL Silicon NPN Phototransistor Unit : mm For optical control systems • Features • H ig h sensitivity : I Ce l = 3-5 m A (m in.) (at L = 500 lx) • W ide directio n al sen sitiv ity for easy use • F a st re sp o n se : tr = 5 jlls (typ.)


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    pn108cl PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 3-φ0.43±0.05 M Di ain sc te on na tin nc ue e/ d 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use


    Original
    2002/95/ecpnz108clpn108cl PDF

    pnz108cl

    Abstract: PN108CL K50010
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type For optical control systems • Features  High sensitivity: IL = 3.5 mA (min.)  Narrow directivity characteristics for effective use of light input


    Original
    2002/95/ecpnz108clpn108clk50010 PDF

    PN108CL

    Abstract: PNZ108CL LX208
    Contextual Info: Phototransistors PNZ108CL PN108CL Silicon planar type Unit: mm 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.) • Signal mixing capability using base pin • Small size (low in height) package


    Original
    pnz108clpn108cllx208 PDF

    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.)


    Original
    2002/95/ecpnz108clpn108cl PDF

    pnz108cl

    Abstract: PN108CL
    Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


    Original
    2002/95/ecpnz108clpn108cl PDF

    PN108CL

    Abstract: PNZ108CL
    Contextual Info: Phototransistors PNZ108CL PN108CL Silicon NPN Phototransistor Unit : mm 3.0±0.3 For optical control systems 12.7 min. 2.0±0.1 0.2±0.05 Features High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use 3-ø0.45±0.05


    Original
    pnz108clpn108cl PDF

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    pamp13-n1mip2f3mip2f4mip382+7mip2e7dmymip2f2mip291mip414smip2e5dmymip411mip3e3smy equivalent PDF

    transistor 30021

    Abstract: PNA4602M
    Contextual Info: Photo Detectors/Photo S3 • PIN Photodiodes for AF, CD, VD, Optical Communications, Control and Space Transmission Flat (Clear) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) PSD Flat (Visible light


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    pn3206pn312dpn322dpn3112+8pn3108pna3201fpn3405pn316k2pn3116pn3624ktransistor 30021pna4602m PDF

    1k88

    Abstract: PN3634 1R88 6N3P PNA4602M
    Contextual Info: I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control II A p tr.tl e min. typ. lyp. typ. ( m A) (nm) (ns) (deg) PN3104 Flat (Clear) PSD 30 2 2 2 940 8 a 65 PN3106(N) Flat (Clear) PSD 30 2 13 940 5 u Flat (Clear) 2 PN3206


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    pn3104pn3106pn3206pn312d+10pfes04-1npfos04-2npn322dpn3105pn31121k88pn36341r886n3ppna4602m PDF

    PN126S

    Abstract: ON1503 PN7103
    Contextual Info: Photo Detectors/Photo Couplers • PIN Photodiodes for AF, CD, VD, Optical ■ Phototransistors Communications and Control A p tr.ti II Appli­ Package VB Id min. typ. typ. cations Type No. Construciton No. (V) max. (nA) (nm) (ns) PN312C(N) Flat (Clear) 2 division 037 30 20 10 900 10


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    pn312cpn312epn3104pn3106+9pn3206pn312dpn322dpn3105pn3112pn3108pn126son1503pn7103 PDF

    bt35f

    Abstract: mf03 c PNA4602M
    Contextual Info: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli­ cations Type No. PN334 Flat (Clear) 2 division Flat (Clear) PSD Flat (Clear) PSD Flat (Clear) 2 division Flat (Viable light cut) 2 division


    OCR Scan
    pn312epn3104pn3106pn3206+9pn312dpn322dpn3105pn3112pn3108pn3107bt35fmf03 cpna4602m PDF

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


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    mn101c01cmn101c01dmn101c025mn1020003+16mn1020004amn1020004afbmn1020012amn102012afamn1020015an3962fbmn1880023mn19412mn1874033ic an7135an3814kmn1883214an8294nsbmn4117405mn171202 PDF

    09874

    Abstract: panasonic fk PN107F PN108CL PN108F 60N40 0F83 JW Electronic Systems
    Contextual Info: - PANASONIC INDL/ELEK-CSEMI} 72C D | 1,132054 0001073 3 6932852 PANASONIC INDLtELECTRONIC VOT'JWX ?2C 09873 * PN107F, PN108F PN 107F, PN108F '> U zi y NPN 7^ h Y =7 T-4I-W / S i NPN Phototransistors &SBfc$üffll$H!§ffl,/For Optical Control Systems • PN 107 F


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    b13sfl540dmfl73pn107fpn108f+775max09874panasonic fkpn108cl60n400f83jw electronic systems PDF

    MN1873287

    Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
    Contextual Info: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>


    Original
    mn101c01cmn15224mn101c01dmn15226+16mn101c027mn15261mn101c03amn101c38amn15263mn101c06dmn1873287an6512n2sk3190mn171202mn158413mn15142mn187164mn6740an7210mn15283 PDF

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original
    pamp13-n1mip411mip2f4mip2f3+7an12947amip2f2mip2f20msmip2f40msmip2e7dmypanasonic inverter dv 700 manualmip291 PDF

    PNZ335

    Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
    Contextual Info: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)


    Original
    pna3w01lpn307pnz313pn313+15pnz300fpn300fpnz313bpn313bpnz323pn323pnz335pn126spna1801pna1801llna1401lcd pick uppna4602mvisible photodetectorpnz334 PDF