lu110
Abstract: PN108CL
Contextual Info: Panasonic Phototransistors PN108CL Silicon NPN Phototransistor U nit : mm For optical control systems • Features • H ig h se n sitiv ity : I C e l = 3-5 m A (m in .) (at L = 5 0 0 lx ) . 3 -00.45+ 0.05 • W id e d irection al se n sitiv ity for e a sy u se
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Contextual Info: Phototransistors PNZ108CL PN108CL Silicon planar type Unit: mm 3.0±0.3 For optical control systems 0.2±0.05 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.) • Signal mixing capability using base pin
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 3.0±0.3 For optical control systems 0.2±0.05 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use
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Contextual Info: Panasonic Phototransistors PN108CL Silicon NPN Phototransistor Unit : mm For optical control systems • Features • H ig h sensitivity : I Ce l = 3-5 m A (m in.) (at L = 500 lx) • W ide directio n al sen sitiv ity for easy use • F a st re sp o n se : tr = 5 jlls (typ.)
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pn108cl |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 3-φ0.43±0.05 M Di ain sc te on na tin nc ue e/ d 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use
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pnz108cl
Abstract: PN108CL K50010
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type For optical control systems • Features High sensitivity: IL = 3.5 mA (min.) Narrow directivity characteristics for effective use of light input
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PN108CL
Abstract: PNZ108CL LX208
Contextual Info: Phototransistors PNZ108CL PN108CL Silicon planar type Unit: mm 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.) • Signal mixing capability using base pin • Small size (low in height) package
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pnz108clpn108cllx208 |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type Unit: mm 12.7 min. • High sensitivity: ICE(L) = 3.5 mA (min.) • Wide directivity characteristics for easy use • Fast response: tr = 5 µs (typ.)
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pnz108cl
Abstract: PN108CL
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ108CL (PN108CL) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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PN108CL
Abstract: PNZ108CL
Contextual Info: Phototransistors PNZ108CL PN108CL Silicon NPN Phototransistor Unit : mm 3.0±0.3 For optical control systems 12.7 min. 2.0±0.1 0.2±0.05 Features High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use 3-ø0.45±0.05
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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pamp13-n1mip2f3mip2f4mip382+7mip2e7dmymip2f2mip291mip414smip2e5dmymip411mip3e3smy equivalent
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transistor 30021
Abstract: PNA4602M
Contextual Info: Photo Detectors/Photo S3 • PIN Photodiodes for AF, CD, VD, Optical Communications, Control and Space Transmission Flat (Clear) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) 2 divisions Flat (Visible light cut) PSD Flat (Visible light
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pn3206pn312dpn322dpn3112+8pn3108pna3201fpn3405pn316k2pn3116pn3624ktransistor 30021pna4602m
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1k88
Abstract: PN3634 1R88 6N3P PNA4602M
Contextual Info: I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control II A p tr.tl e min. typ. lyp. typ. ( m A) (nm) (ns) (deg) PN3104 Flat (Clear) PSD 30 2 2 2 940 8 a 65 PN3106(N) Flat (Clear) PSD 30 2 13 940 5 u Flat (Clear) 2 PN3206
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pn3104pn3106pn3206pn312d+10pfes04-1npfos04-2npn322dpn3105pn31121k88pn36341r886n3ppna4602m
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PN126S
Abstract: ON1503 PN7103
Contextual Info: Photo Detectors/Photo Couplers • PIN Photodiodes for AF, CD, VD, Optical ■ Phototransistors Communications and Control A p tr.ti II Appli Package VB Id min. typ. typ. cations Type No. Construciton No. (V) max. (nA) (nm) (ns) PN312C(N) Flat (Clear) 2 division 037 30 20 10 900 10
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pn312cpn312epn3104pn3106+9pn3206pn312dpn322dpn3105pn3112pn3108pn126son1503pn7103
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bt35f
Abstract: mf03 c PNA4602M
Contextual Info: Photo Detectors/Photo Couplers I Phototransistors I PIN Photodiodes for AF, CD, VD, Optical Communications and Control Appli cations Type No. PN334 Flat (Clear) 2 division Flat (Clear) PSD Flat (Clear) PSD Flat (Clear) 2 division Flat (Viable light cut) 2 division
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pn312epn3104pn3106pn3206+9pn312dpn322dpn3105pn3112pn3108pn3107bt35fmf03 cpna4602m
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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mn101c01cmn101c01dmn101c025mn1020003+16mn1020004amn1020004afbmn1020012amn102012afamn1020015an3962fbmn1880023mn19412mn1874033ic an7135an3814kmn1883214an8294nsbmn4117405mn171202
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09874
Abstract: panasonic fk PN107F PN108CL PN108F 60N40 0F83 JW Electronic Systems
Contextual Info: - PANASONIC INDL/ELEK-CSEMI} 72C D | 1,132054 0001073 3 6932852 PANASONIC INDLtELECTRONIC VOT'JWX ?2C 09873 * PN107F, PN108F PN 107F, PN108F '> U zi y NPN 7^ h Y =7 T-4I-W / S i NPN Phototransistors &SBfc$üffll$H!§ffl,/For Optical Control Systems • PN 107 F
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b13sfl540dmfl73pn107fpn108f+775max09874panasonic fkpn108cl60n400f83jw electronic systems
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MN1873287
Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Contextual Info: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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pamp13-n1mip411mip2f4mip2f3+7an12947amip2f2mip2f20msmip2f40msmip2e7dmypanasonic inverter dv 700 manualmip291
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PNZ335
Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Contextual Info: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)
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pna3w01lpn307pnz313pn313+15pnz300fpn300fpnz313bpn313bpnz323pn323pnz335pn126spna1801pna1801llna1401lcd pick uppna4602mvisible photodetectorpnz334
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