PKB3001U Search Results

Contextual Info: I ObE D N AMER PHILIPS/DISCRETE • DQ15D7^ 4 ■ MAINTENANCE TYPE PKB3001U (for new design use PTB32001X J V _ T 33 -os MICROW AVE POW ER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

PKB3001U

Abstract: PTB32001X
Contextual Info: N AMER PHILIPS/DISCRETE ObE D • fab53131 G01507cl 4 ■ MAINTENANCE TYPE PKB3001U for new design use PT632001X T > 3 3 -O S r * < „ MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

Contextual Info: PKB3001U Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)160m Absolute Max. Power Diss. (W)4.5¥ Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI