PKB25006T Search Results

PKB25006T Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PKB25006T		Philips Semiconductors	Microwave Power Transistor	Original	PDF	47.54KB	2

PKB25006T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: N AMER PHILIPS/DISCRETE □ bE D bbS3T31 0015011 5 • PKB25006T MAINTENANCE TYPE 7 V MICROWAVE POWER TRANSISTOR NPN bipolar transistor intended for use in common-base class-B power amplifiers up to 2,45 GHz. Diffused emitter ballasting resistors, multicell geometry, interdigited structure, localized thick oxide	OCR Scan	bbS3T31 PKB25006T	PDF
PKB25006T Contextual Info: N AMER PHILIPS/DISCRETE □ ttE D • ^53^31 QDISQTI 5 PKB25006T MAINTENANCE TYPE MICROWAVE POWER TRANSISTOR NPN bipolar transistor intended fo r use in common-base class-B power am plifiers up to 2,45 G Hz. Diffused emitter ballasting resistors, m ulticell geometry, interdigited structure, localized th ick oxide	OCR Scan	PKB25006T	PDF
FET BFW10 Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI	OCR Scan	BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: N AMER PHILIPS/DISCRETE □ bE D bbS3T31 0015011 5 • PKB25006T MAINTENANCE TYPE 7 V MICROWAVE POWER TRANSISTOR NPN bipolar transistor intended for use in common-base class-B power amplifiers up to 2,45 GHz. Diffused emitter ballasting resistors, multicell geometry, interdigited structure, localized thick oxide

OCR Scan

bbS3T31 PKB25006T

PDF

PKB25006T

Contextual Info: N AMER PHILIPS/DISCRETE □ ttE D • ^53^31 QDISQTI 5 PKB25006T MAINTENANCE TYPE MICROWAVE POWER TRANSISTOR NPN bipolar transistor intended fo r use in common-base class-B power am plifiers up to 2,45 G Hz. Diffused emitter ballasting resistors, m ulticell geometry, interdigited structure, localized th ick oxide

OCR Scan

PKB25006T

PDF

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

OCR Scan

BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

PDF