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    PDTC124EMB Search Results

    PDTC124EMB Datasheets (2)

    NXP Semiconductors
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PDTC124EMB
    NXP Semiconductors NPN resistor-equipped transistor; R1 = 22 kOhm, R2 = 22 kOhm Original PDF 726.45KB 11
    PDTC124EMB,315
    NXP Semiconductors PDTC124EMB - PDTC124EMB - NPN resistor-equipped transistor; R1 = 22 kOhm, R2 = 22 kOhm Original PDF 726.42KB 11
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    PDTC124EMB Price and Stock

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    NXP Semiconductors PDTC124EMB,315

    Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin DFN-B T/R
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    Verical () PDTC124EMB,315 180,000 5,301
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    PDTC124EMB,315 109,833 5,301
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    Rochester Electronics PDTC124EMB,315 289,833 1
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    Nexperia PDTC124EMB,315

    Trans Digital BJT NPN 50V 0.1A 250mW 3-Pin DFN-B T/R Automotive AEC-Q101
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    Verical PDTC124EMB,315 90,000 5,301
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    Avnet Americas PDTC124EMB,315 Tape & Reel 30 Weeks 30,000
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    Rochester Electronics PDTC124EMB,315 90,000 1
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    PDTC124EMB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 83B PDTC124EMB SO T8 NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original
    pdtc124embdfn1006b-3ot883bpdta124emb+1aec-q101 PDF

    Contextual Info: 83B PDTC124EMB SO T8 NPN resistor-equipped transistor; R1 = 22 k , R2 = 22 k Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original
    pdtc124embdfn1006b-3ot883bpdta124emb+1aec-q101 PDF

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original
    dfn1006d-2od882ddfn1010d-3ot1215+16dfn2020md-6ot1220dfn1608d-2od1608dsn0603od962circuit diagram wireless spy camerapdtb123yip4303cx4dual cc baw623267 tsop6pcmf2dfn1bst60pumd4pdtb123epdta143 PDF

    Contextual Info: 83B PDTA124EMB SO T8 PNP resistor-equipped transistor; R1 = 22 kΩ, R2 = 22 kΩ Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original
    pdta124embdfn1006b-3ot883bpdtc124emb+1aec-q101 PDF

    PDTC124

    Contextual Info: 83B PDTA124EMB SO T8 PNP resistor-equipped transistor; R1 = 22 k , R2 = 22 k Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original
    pdta124embdfn1006b-3ot883bpdtc124emb+2aec-q101pdtc124 PDF