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    PDTC123JMB Search Results

    PDTC123JMB Datasheets (3)

    NXP Semiconductors
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PDTC123JMB
    		NXP Semiconductors NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 47 kOhm Original PDF 726.11KB 11
    PDTC123JMB315
    		NXP Semiconductors NOW NEXPERIA PDTC123JMB - SMALL Original PDF 854.89KB
    PDTC123JMB,315
    		NXP Semiconductors PDTC123JMB - PDTC123JMB - NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 47 kOhm Original PDF 726.12KB 11
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    PDTC123JMB Price and Stock

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    Nexperia PDTC123JMB-315

    TRANS PREBIAS NPN 50V 0.1A 3DFN
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    DigiKey () PDTC123JMB-315 Digi-Reel 7,357 1
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    PDTC123JMB-315 Cut Tape 7,357 1
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    Nexperia PDTC123JMB,315

    - Tape and Reel (Alt: PDTC123JMB,315)
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    Avnet Americas PDTC123JMB,315 Tape & Reel 53 Weeks, 1 Days 30,000
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    Mouser Electronics () PDTC123JMB,315 5,929
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    PDTC123JMB,315 5,929
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    Verical () PDTC123JMB,315 61,974 5,301
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    Rochester Electronics PDTC123JMB,315 121,974 1
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    NXP Semiconductors PDTC123JMB,315

    Trans Digital BJT NPN 50V 100mA 250mW Automotive 3-Pin DFN-B T/R
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    Verical PDTC123JMB,315 156,576 5,301
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    Rochester Electronics PDTC123JMB,315 156,576 1
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    Nexperia PDTC123JMB

    Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
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    Vyrian PDTC123JMB 3,008
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    PDTC123JMB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    smd transistor footprint

    Abstract: PDTC123JMB
    Contextual Info: 83B PDTC123JMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTC123JMB DFN1006B-3 OT883B) PDTA123JMB. AEC-Q101 smd transistor footprint PDTC123JMB PDF

    PDTC123JMB

    Contextual Info: 83B PDTC123JMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 47 k Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTC123JMB DFN1006B-3 OT883B) PDTA123JMB. AEC-Q101 PDTC123JMB PDF

    PDTC123JMB

    Contextual Info: 83B PDTA123JMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 47 k Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA123JMB DFN1006B-3 OT883B) PDTC123JMB. AEC-Q101 PDTC123JMB PDF

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143 PDF

    PDTC123JMB

    Contextual Info: 83B PDTA123JMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Rev. 1 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA123JMB DFN1006B-3 OT883B) PDTC123JMB. AEC-Q101 PDTC123JMB PDF