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    PDTA123EMB Search Results

    PDTA123EMB Datasheets (2)

    NXP Semiconductors
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PDTA123EMB
    		NXP Semiconductors PNP resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2. kOhm Original PDF 721.13KB 12
    PDTA123EMB,315
    		NXP Semiconductors PDTA123EMB - PDTA123EMB - PNP resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhm Original PDF 721.12KB 12
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    PDTA123EMB Price and Stock

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    Rochester Electronics LLC PDTA123EMB-315

    TRANS PREBIAS PNP 50V 0.1A 3DFN
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    DigiKey () PDTA123EMB-315 Bulk 139,871 3,519
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    PDTA123EMB-315 Bulk 79,970 3,519
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    Nexperia PDTA123EMB-315

    TRANS PREBIAS PNP 50V 0.1A 3DFN
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    DigiKey () PDTA123EMB-315 Tape & Reel 10,000
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    Nexperia PDTA123EMB,315

    - Tape and Reel (Alt: PDTA123EMB,315)
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    Avnet Americas PDTA123EMB,315 Tape & Reel 30 Weeks 30,000
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    Verical PDTA123EMB,315 79,970 5,301
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    Rochester Electronics PDTA123EMB,315 79,970 1
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    NXP Semiconductors PDTA123EMB,315

    Trans Digital BJT PNP 50V 100mA 250mW Automotive AEC-Q101 3-Pin DFN-B T/R
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    Verical () PDTA123EMB,315 100,000 5,301
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    PDTA123EMB,315 39,871 5,301
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    Rochester Electronics PDTA123EMB,315 139,871 1
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    Nexperia PDTA123EMB

    Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
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    Vyrian PDTA123EMB 5,036
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    PDTA123EMB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 83B PDTA123EMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 k , R2 = 2.2 k Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA123EMB DFN1006B-3 OT883B) PDTC123EMB. AEC-Q101 PDF

    Contextual Info: 83B PDTA123EMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 1 — 25 April 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA123EMB DFN1006B-3 OT883B) PDTC123EMB. AEC-Q101 PDF

    Contextual Info: 83B PDTA123EMB SO T8 PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 2 — 4 May 2012 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTA123EMB DFN1006B-3 OT883B) PDTC123EMB. AEC-Q101 PDF

    Contextual Info: 83B PDTC123EMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 1 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTC123EMB DFN1006B-3 OT883B) PDTA123EMB. AEC-Q101 PDF

    circuit diagram wireless spy camera

    Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
    Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint


    Original     		DFN1006D-2 OD882D) DFN1010D-3 OT1215) DFN2020MD-6 OT1220) DFN1608D-2 OD1608) DSN0603 OD962) circuit diagram wireless spy camera PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143 PDF

    Contextual Info: 83B PDTC123EMB SO T8 NPN resistor-equipped transistor; R1 = 2.2 k , R2 = 2.2 k Rev. 1 — 3 April 2012 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor RET in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PDTC123EMB DFN1006B-3 OT883B) PDTA123EMB. AEC-Q101 PDF