PD100F5 Search Results

PC100F5

Abstract: PD100F5 a157
Contextual Info: FRD PC100F5 PD100F5 100A Avg 500 Volts •外形寸法図 OUTLINE DRAWING ■回路図 CIRCUIT （単位 Dimension：mm） PC 2 1 3 PD 2 1 3 ■最大定格 Maximum Ratings 項 目 Parameter 記号 Symbol 耐圧クラス Grade PC100F5/PD100F5

Contextual Info: FRD MODULE 100A/500V/trr:100nsec PD100F5 OUTLINE DRAWING FEATURES * Isolated Base * Dual Diode Doubler Circuit * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification Maximum Ratings

Contextual Info: FAST RECOVERY DIODE MODULE PC100F5 PD100F5 110A/500V/trr: lOOnsec FEATURES p« -Jl 11 61]- ° Isolated Base 0 Dual Diodes - Cathode Common : PC100F5 Doubler : PD100F5 ° Super Fast Recovery ° High Surge Capability '‘I 23 5 i0 33j _7l0 28 i J ÓO wJ H ]°W ÏN '

Contextual Info: FRD PC100F5 PD100F5 100A Avg 500 Volts •外形寸法図 OUTLINE DRAWING ■回路図 CIRCUIT （単位 Dimension：mm） PC 2 1 3 PD 2 1 3 ■最大定格 Maximum Ratings 項 目 Parameter 記号 Symbol 耐圧クラス Grade PC100F5/PD100F5

Contextual Info: FRD MODULE 100A/500V/trr:100nsec PD100F5 OUTLINE DRAWING FEATURES * Isolated Base * Dual Diode Doubler Circuit * Ultra Fast Recovery * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification Maximum Ratings

tn84

Abstract: PC100F5 PD100F5
Contextual Info: FAST RECOVERY DIODE MODULE noA/soov/trr :100nsec PC100F5 PD100F5 FEATURES ° Isolated Base ° Dual Diodes - Cathode Common : PC100F5 Doubler : PD100F5 ° Super Fast Recovery o High Surge Capability Dimensions in mm Inches Approx. Net Weight : 210 Grams MAXIMUM R A T IN G S

Contextual Info: FAST RECOVERY DIODE MODULE PC100F5 PD100F5 110A/500V/trr: lOOnsec FEATURES ° Isolated Base ° Dual Diodes - Cathode Common : PC100F5 Doubler : PD100F5 ° Super Fast Recovery ° High Surge Capability Dimensions in mm Inches Approx. Net W eight: 210 Grams

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

30KF60B

Abstract: 10EF1 NSF03A20 C25P10Q F10P10Q C25P40F KSF25A120B C10P10Q 61MQ60 c16p40f
Contextual Info: ALPHA-NUMERICAL INDEX ALPHA-NUMERICAL INDEX cont’d TY PE TY PE P ag e P age TY PE P age TY PE Page TY PE P age 1N4001 604 5KF40 482 10DF6 440 ♦ 11EFS3 434 20E2 610 1N4002 604 5KF40B 482 ♦ 10DF8 440 ♦ 11EFS4 434 20E4 610 IN 4003 604 ♦ 5KQ30 166

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

PDM5001

Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Contextual Info: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH

F10P100

Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Contextual Info: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04