PBSS4032PD Search Results

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Contextual Info: PBSS4032PD 30 V, 2.7 A PNP low VCEsat BISS transistor Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS4032PD 30 V, 2.7 A PNP low VCEsat BISS transistor Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

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Contextual Info: Application Guide Notebook Computing Introduction Your partner for notebook computing Designing notebooks isn’t getting any easier. The footprint continues to shrink, and consumers continue to demand more features, faster speeds, on our decades-long leadership in high-performance mixed-signal solutions,

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Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

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Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

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Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

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Contextual Info: AN11045 Next generation of NXP low VCEsat transistors: improved technology for discrete semiconductors Rev. 3 — 28 February 2013 Application note Document information Info Content Keywords Breakthrough In Small Signal BISS transistor, low VCEsat, load switch,

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Contextual Info: The most efficient low VCEsat BISS transistors Experience best performance for on-state-resistance and switching times. Choose from NXP’s broad portfolio of energy and space saving products. Low VCEsat (BISS) transistors Product News : Fourth-generation technology

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Contextual Info: Discrete Semiconductors Selection Guide 2010 Diodes, transistors, ESD and signal conditioning devices Excellence in portfolio and performance Diodes Introducing new package technology Page 7 Portable and increasingly smaller end products fuel the race towards more sophisticated functionality in smaller form

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Contextual Info: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and

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Contextual Info: PBSS4032ND 30 V, 3.5 A NPN low VCEsat BISS transistor Rev. 01 — 30 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS4032ND 30 V, 3.5 A NPN low VCEsat BISS transistor Rev. 01 — 30 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.