PB10S6 Search Results

Contextual Info: DIODE 10A/100V to 600V PB10S1,2,4,6 OUTLINE DRAWING FEATURES * Isolated Base * 4 Diodes Single Phase Bridge Connected * High Surge Capability TYPICAL APPLICATIONS * Rectified For General Use Maximum Ratings Voltage Rating Repetitive Peak Reverse Voltage Non repetitive Peak Reverse Voltage

Contextual Info: DIODE Type：PB10S1,2,4,6 •OUTLINE DRAWING 構造 ：単相ブリッジ型シリコン整流器 Construction: Single Phase Bridge Rectifier 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating Approx Net weight:8.5g

PB10S1

Contextual Info: DIODE Type:PB10S1,2,4,6 OUTLINE DRAWING SINGLE – PHASE SILICON BRIDGE RECTIFIER FEATURES * Surge Overload Rating : 150 Amperes Peak * Low Forward Voltage Drop * Mounting Position : Any Maximum Ratings Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage

PT76S16

Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Contextual Info: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

PB10S6

Contextual Info: Type：PB10S1,2,4,6 DIODE •OUTLINE DRAWING 構造 ：単相ブリッジ型シリコン整流器 Construction: Single Phase Bridge Rectifier 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating Approx Net weight:8.5g

508RP

Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Contextual Info: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

PB10S1

Abstract: 150x150x3mm
Contextual Info: DIODE Type：PB10S1,2,4,6 •OUTLINE DRAWING 構造 ：単相ブリッジ型シリコン整流器 Construction: Single Phase Bridge Rectifier 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating Approx Net weight:8.5g

PDM5001

Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Contextual Info: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH

FCGS20A12

Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Contextual Info: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ

Contextual Info: Type：PB10S6 DIODE •OUTLINE DRAWING 構造 ：単相ブリッジ型シリコン整流器 Construction: Single Phase Bridge Rectifier 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating Approx Net weight:8.5g

PB10S4

Abstract: pb10s2 PB10S1 PB10S6
Contextual Info: DIODE Type:PB10S1,2,4,6 OUTLINE DRAWING SINGLE – PHASE SILICON BRIDGE RECTIFIER FEATURES * Surge Overload Rating : 150 Amperes Peak * Low Forward Voltage Drop * Mounting Position : Any Maximum Ratings Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage