P2804BVG Search Results

P2804

Abstract: P2804BVG
Contextual Info: P2804BVG N-Channel Logic Level Enhancement NIKO-SEM SOP-8 Lead-Free Mode Field Effect Transistor D 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE PRODUCT SUMMARY V BR DSS RDS(ON) ID 40V 28mΩ 7.5A G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise PARAMETERS/TEST CONDITIONS

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

Contextual Info: Single N-channel MOSFET ELM34406AA-N •General description ■Features ELM34406AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=7.5A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V)

ELM34406AA

Abstract: p2804bvg
Contextual Info: 单 N 沟道 MOSFET ELM34406AA-N •概要 ■特点 ELM34406AA-N 是 N 沟道低输入电容，低工作电压， •Vds=40V 低导通电阻的大电流 MOSFET。 ·Id=7.5A ·Rds on < 28mΩ (Vgs=10V) ·Rds(on) < 42mΩ (Vgs=4.5V) ■绝对最大额定值 项目

p2804bvg

Contextual Info: Single N-channel MOSFET ELM34406AA-N •General description ■Features ELM34406AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=7.5A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V)

P70N02LDG

Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Contextual Info: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG

p2804bvg

Contextual Info: シングル N チャンネル MOSFET ELM34406AA-N •概要 ■特長 ELM34406AA-N は低入力容量 低電圧駆動、 低 ・ Vds=40V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=7.5A ・ Rds on < 28mΩ (Vgs=10V) ・ Rds(on) < 42mΩ (Vgs=4.5V)