OCS30 Search Results

PTB 99 ATEX 2036

Abstract: OCS3000-F22-N2-V1 PEPPERL
Contextual Info: Abmessungen 45 LED 3,2 4 Mitte Optikachse Sender 18 4 4 3,2 18,5 50 50 Mitte Optikachse Empfänger 26,5 Baureihe - Sensoren für den Ex-Bereich / NAMUR 4 18 Reflexions-Lichtschranke NAMUR 90˚ 19.5 OCS3000-F22-N2-V1 4-pol. Stecker M12x1 Potentiometer 3000 mm

Contextual Info: O K I electronic components QCS30_ OPTICALY PNPN SWITCHES GENERAL DESCRIPTION The OCS30 is an optical switch formed by combining a GaAs infrared light-emitting diode and a silicon high-withstand voltage PNPN element, encased in an 8-pin plastic package.

diode in40

Abstract: K2P0037-27-33
Contextual Info: K2P0037-27-33 OKI electronic components OCS30 Optical PNPN Switches GENERAL DESCRIPTION The OCS30 is an optical sw itch form ed by com bining an infrared light em itting diode a n d a PN PN elem ent {photothyristor that can w ith stan d high voltages. The device is encased in an 8-pin plastic

PTB 99 ATEX 2036

Abstract: OCS3000-F22-N2-V1
Contextual Info: Series - Sensors for the hazardous area/NAMUR Dimensions 45 LED 3.2 4 Center of emitter optical axis 18 4 26.5 4 3.2 18.5 50 50 Center of receiver optical axis 4 18 NAMUR retro-reflective photoelectric sensor 19.5 OCS3000-F22-N2-V1 Potentiometer 90˚ 4-pin. connector

TRANSISTOR BO 346

Abstract: transistor bd 346 TRANSISTOR BO 341 OCS30 TRANSISTOR BO 345
Contextual Info: O K I electronic com ponents QCS30 Optical PNPN Switches GENERAL DESCRIPTION T he OCS3C is an optical sw itch form ed b y co m bining a G aA s in frared light em ittin g d io d e a n d a silicon P N P N elem ent th at can w ith sta n d high voltages. T he device is encased in an 8-pin plastic

Photo Relays

Abstract: OCS37 OLD122 OCS32 OLD222 OC40 ocm220
Contextual Info: I PRODUCT LINE OLD122 LIGHT EMITTING DIODES OLD123 OLD124 OLD125 OLD127 OLD222 OLD222H OLD223 OLD224 OLD225 OLD232 OLD232-2 - OLD234 OLD2202 OLD22Û3 4 •P R O D U C T L IN E« PHOTO SENSORS Silicon PIN Photodiodes for Optical Communications " OD43L

photo transistor application

Abstract: pair of led and photo transistor oki oc340 AN/npn photo transistor
Contextual Info: - ♦PRODUCT o v e r v ie w # PHOTO COUPLING DEVICES PHOTO COUPLERS APPLICATION NOTES 1. General Description By coupling a light emitting element and a light sensing element, a single-function element

IEC 60947-5-6

Abstract: Westinghouse Motor Type FK vas-2a-k12-u VBG-PB-K20-DMD trumpf knauf MLV11-8-LAS-150 NCB4-12GM60-B3B-V1 NCN3-F31-B3B-V1-K toyota Speed Sensor
Contextual Info: FACTORY AUTOMATION AS Interface Overview AS-Interface – the standard for fast, reliable installation AS-Interface is the market standard in cost-effective cabling solutions, with more than 270 member companies, and compatible with all device families. Why is there an AS-Interface?

led phototransistor pair

Abstract: toco Phototransistor til 81
Contextual Info: î] E2P0007-27-31 PHO TOCO UPLERS PRO DU CT OVERVIEW PHOTOCOUPLERS APPLICATION NOTES 1. GENERAL DESCRIPTIO N B y coupling a light emitting element and a light sensing element, a single-function element: can be created. The functional element thus produced is called a photocoupler, photointerrupter or sensor

OJ500-M1K-E23

Abstract: OJ500-M1K-E01 OJ3000-M1K-E23 oj50-0 oJ-50 OJ3000-M1K infrared reflection switch circuit OCT500-M1A OCT500-M1A-B3 OCT500-M1A-B3-V1
Contextual Info: Photoelectric Sensors M1K Series • 25-position sensing head • Crosstalk protected • Weak signal output and indicator Diffused Mode Retro-Reflective Mode See page 504 See page 505-506 Features: • Application specific monitoring of signal strength • 100,000 hour LED

od43l

Abstract: OLD222 OCS32 LED 850nm TO-18 ocm220
Contextual Info: Tstg : -5 5 ~ +125°C Metal can Topr :-4 0 - +125°C (Metal can) 1FM'’ (tw =100jis) 1FH'Z (tw -2 0 0 ms) 1fm':! (tw -150ns) -3 0 ~+100°C (Others) -3 0 ~ +100°C (Others) (T-10m s) Absolute Maximum Ratings (Tas25°C) R a d ia tio n Color Package P Vr IF

Contextual Info: O K I electronic components QCS30 Optical PNPN Sw itches GENERAL DESCRIPTION The OCS3 3 is an optical switch form ed by com bining a G aA s infrared light em itting diode and a silicon P N PN element that can w ithstand high voltages. The device is encased in an 8-pin plastic