NTE542 Search Results

SCR 30A 400V

Abstract: NTE5424
Contextual Info: NTE5424 Silicon Controlled Rectifier SCR for TV Power Supply Switching Description: The NTE5424 is a silicon controlled rectifier (SCR) in a TO220 type package designed for high–speed switching applications such as power inverters, switching regulators, and high–current pulse applications. This device features fast turn–off, high dv/dt, and high di/dt characteristics and may be used

NTE5426

Abstract: 1A 400v scr to220
Contextual Info: NTE5426 Silicon Controlled Rectifier SCR Sensitive Gate Description: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off–state to conduction by a current pulse applied to the gate terminal and is

SCR 30A 400V

Abstract: SCR 30A 100V NTE5424
Contextual Info: NTE5424 Silicon Controlled Rectifier SCR for TV Power Supply Switching, TO220 Description: The NTE5424 is a silicon controlled rectifier (SCR) in a TO220 type package designed for high−speed switching applications such as power inverters, switching regulators, and high−current pulse applications. This device features fast turn−off, high dv/dt, and high di/dt characteristics and may be used

NTE5427

Abstract: 7A 400v scr NTE5428 NTE5429
Contextual Info: NTE5427 thru NTE5429 Silicon Controlled Rectifier SCR 7 Amp, TO5 Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE542

Contextual Info: NTE542 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current350m @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage16k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage14k @I(FM) (A) (Test Condition)350m @Temp. (øC) (Test Condition)50’

NTE5427

Abstract: 7A 400v scr NTE5428 NTE5429
Contextual Info: NTE5427 thru NTE5429 Silicon Controlled Rectifier SCR 7 Amp Absolute Maximum Ratings: Repetitive Peak Reverse Voltage (TC = +110°C), VRRM NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE5426

Abstract: 1A 400v scr to220 SCR TRIGGER PULSE circuit "Silicon Controlled Rectifier" scr 250 amps SCR RECTIFIER SCR sensitive gate
Contextual Info: NTE5426 Silicon Controlled Rectifier SCR Sensitive Gate, TO220 Isolated Description: The NTE5426 is silicon controlled rectifier (SCR) in an isolated tab TO220 type package. This device may be switched from off−state to conduction by a current pulse applied to the gate terminal and is

ic vrm

Abstract: NTE542
Contextual Info: NTE542 High Voltage Silicon Rectifier, 500mA Features: D Diffused Silicon Junctions D Glass Passivated Junctions D Avalanche Characteristics D Matched Reverse Parameters D Fast Recovery Series D Low Reverse Leakage Maximum Ratings and Electrical Characteristics: TA = +25°C unless otherwise specified

Contextual Info: SILICON CONTROLLED RECTIFIERS SCR (TV POWER SUPPLY SWITCHING) NTE Type No. 5424 Description and Application High Speed Switch, Power Supply Control Regulator Maximum Ratings Repetitive Peak Forward Off-State Voltage (Volts) RMS On-State Current (Amps) Surge

nte5455

Abstract: nte5679 NTE5402 NTE5556 NTE5614 NTE5534 NTE5457 NTE5646 NTE5468 NTE5629
Contextual Info: N T E ELECTRONICS INC SEE D Bi b 4 3 1 2 S ci DGOs'bSfi 4TS INTE SfcLCQN CQNTROLLE&REeB FOR PHASE CONTROL APPLICATIONS DC or Pk Votts V DRM i (t(rmS) Maximum Forward Current Amps (A ll Conducting Angles) 0.8A 3A Sensitive Sensitive Gate Gate 4A Sensitive Gate

HIGH VOLTAGE DIODE for microwave ovens

Abstract: NTE109 NTE778A NTE5679 NTE941M germanium rectifier diode NTE5455 NTE943M NTE987 NTE5344
Contextual Info: 1994-2012.qxp:QuarkCatalogTempNew 9/11/12 8:55 AM Page 1994 ENCLOSURES INTERCONNECT TEST & MEASUREMENT 25 Comparators, Amplifiers, Diodes, Transient Voltage Suppressors TVS and IGBTs Allied Represents the Full Line of NTE Products, Most Available for Next Day Delivery. Contact Allied Sales at 1-800-433-5700 or Visit Us at www.Alliedelec.com.

NTE4017B

Abstract: NTE977 IRF 707 NTE7400 NTE4001B NTE74C14 NTE5402 NTE997 P405W NTE955M
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor

NTE74HC4067

Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165
Contextual Info: Semiconductors Integrated Circuits Integrated Circuits cont. Part Number Description NTE40175B IC-CMOS, Quad D-Type Flip-Flop NTE4017B IC-CMOS, Decade Counter w/10 Decoder Outputs NTE40182B IC-CMOS, Look Ahead Carry Generator Part Number Description NTE4018B

1V130

Abstract: NTE1V095 2V130 1V025 NTE2V480 524V15 NTE524V13 524V13 1V150 NTE2V095
Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

1V130

Abstract: 320/20 METAL OXIDE VARISTOR NTE1V095 NTE524V13 524V13 524V25 1V300 2V025 2V130 524V15
Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.

Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.

NTE5405

Abstract: GT 32 DIAC
Contextual Info: N T E ELECTRON ICS INC SEE D Bi b 4 3 1 2 S ci DGOs'bSfi 4TS INTE SfcLCQN CQNTROLLE&REeB FOR PHASE CONTROL APPLICATIONS DC or Pk Votts V DRM i (t(rmS) Maximum Forward Current Amps (All Conducting Angles) 0.8A 3A Sensitive Sensitive Gate Gate 4A Sensitive Gate

524V13

Abstract: 524V25 2V035
Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.