NOV10 Search Results
NOV10 Price and Stock
Abracon Corporation ABLNO-V-104.000MHZOscillator, Voltage Controlled, LVCMOS, 104 MHz, SMD, 14.3mm x 8.7mm, 3.3 V - Bulk (Alt: ABLNO-V-104.000MHZ) |
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ABLNO-V-104.000MHZ | Bulk | 12 Weeks | 25 |
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ABLNO-V-104.000MHZ | Bulk | 25 |
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ABLNO-V-104.000MHZ | Bulk | 12 Weeks | 25 |
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ABLNO-V-104.000MHZ | 14 Weeks | 25 |
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ABLNO-V-104.000MHZ | 1 |
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Abracon Corporation ABLNO-V-100.000MHZ-T2Oscillator, Voltage Controlled, LVCMOS, 100 MHz, SMD, 14.3mm x 8.7mm, 3.3 V - Tape and Reel (Alt: ABLNO-V-100.000MHZ-T2) |
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ABLNO-V-100.000MHZ-T2 | Tape & Reel | 12 Weeks | 250 |
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ABLNO-V-100.000MHZ-T2 | Tape & Reel | 218 | 10 |
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| ABLNO-V-100.000MHZ-T2 | Cut Tape | 218 | 1 |
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| ABLNO-V-100.000MHZ-T2 | Tape & Reel | 250 |
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| ABLNO-V-100.000MHZ-T2 | Cut Tape | 250 |
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ABLNO-V-100.000MHZ-T2 | Bulk | 16 Weeks | 250 |
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ABLNO-V-100.000MHZ-T2 | Reel | 250 | 250 |
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| ABLNO-V-100.000MHZ-T2 | Reel | 250 |
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ABLNO-V-100.000MHZ-T2 | 328 | 6 |
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ABLNO-V-100.000MHZ-T2 | Tape & Reel | 14 Weeks | 250 |
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ABLNO-V-100.000MHZ-T2 | 12 Weeks | 250 |
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ABLNO-V-100.000MHZ-T2 | 1 |
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ABLNO-V-100.000MHZ-T2 | 248 |
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ABLNO-V-100.000MHZ-T2 | 211 |
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Abracon Corporation ABLNO-V-106.250MHZ-T2Oscillator, Voltage Controlled, LVCMOS, 106.25 MHz, SMD, 14.3mm x 8.7mm, 3.3 V - Tape and Reel (Alt: ABLNO-V-106.250MHZ-T2) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ABLNO-V-106.250MHZ-T2 | Tape & Reel | 10 Weeks | 250 |
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Abracon Corporation ABLNO-V-104.000MHZ-T2Oscillator, Voltage Controlled, LVCMOS, 104 MHz, SMD, 14.3mm x 8.7mm, 3.3 V - Tape and Reel (Alt: ABLNO-V-104.000MHZ-T2) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ABLNO-V-104.000MHZ-T2 | Tape & Reel | 10 Weeks | 250 |
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Abracon Corporation ABLNO-V-106.250MHZ-TOscillator, Voltage Controlled, LVCMOS, 106.25 MHz, SMD, 14.3mm x 8.7mm, 3.3 V - Tape and Reel (Alt: ABLNO-V-106.250MHZ-T) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ABLNO-V-106.250MHZ-T | Tape & Reel | 10 Weeks | 1,000 |
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NOV10 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: A B C E D F REV. A 0.O35±.OO2 [0O.89±O.O5l 0.O62±.OO2 [01.57±O.O5] HOLES 2 REQ’D DATE REV BY APPRD. L Chan NOV10/06 |— .120 [3.05] — .160 [4.06] i— .200 [5.08] ELECTRICAL 1. VOLTAGE RATING: 125 VAC RMS MAX. 2. CURRENT RATING: 1.5 AMPS MAX. 3. CONTACT RESISTANCE: 30 MILLIOHMS MAX. |
OCR Scan |
nov10/061000vac | |
CX20100Contextual Info: SA in o - a in o - o 9j KÍ) MA i n o -0 13A31 NOV10 V MA © AJy »10 Mg © Ü IH S 13A3T © 1X3/A1 © © ONASO © *10 dWOD u dWVIO‘ 8 6XÍd IXid i a a e n s -0 © © 1X3-0 dWVTO-9 <$p <x 0N9 ia 0 0HS-O Y dWVIO-H @ © 1X3-9 UH0 @ @ Z LM ( r ix3 * y |
OCR Scan |
cx20100 | |
T3.15A 250V
Abstract: t3.15A/250V fuse T3 15A 250V T3.15A L 250V t3.15A/250V CSS65
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css65115/230vacnov10t3.15a 250v+4 | |
aon6718Contextual Info: AON6718 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AON6718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is ideally suited for use as a low side switch in CPU core |
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aon6718 | |
AK8111
Abstract: AK8141 AKD8141
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akd8141ak811xak81418111x+2 | |
AK8111
Abstract: FCXO-05
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akd8141ak811xak81418111x+3 | |
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Contextual Info: AON6422 30V N-Channel MOSFET General Description Product Summary The AON6422 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications. |
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aon6422 | |
RD-158
Abstract: TP07161 30x4 AWG36 OPP9984
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hp-4284atp07161rd158nov-10-2010+7 | |
74hc1g08
Abstract: marking za sc-88A
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OCR Scan |
74hc1g0874hct1g08245106/00/01/pp12nov10+1 | |
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Contextual Info: W8 3 7 92 AD/D W83792AG /G Winbond H/W Monitoring IC CSB Version Date :2005 Nov. Revision: 0.9 W83792AD/AG/D/G PRELIMINARY W83792AD/D Data Sheet Revision History Pages Dates Version Web Version Main Contents 1 Aug-27-2003 N/A Move Low Bit I/II to AEh and AFh |
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w83792agw83792ad/ag/d/gw83792ad/daug-27-2003+5 | |
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Contextual Info: • Very low cost • Small size • Power factor corrected • Wide range AC Input • Convection or fan cooled • Three year warranty • 41mm high for 1U racking • 250W peak rating on 24 & 36v models Key Market Segments & Applications Key Market Segments & Applications |
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ls200nov10 | |
transformer winding reference
Abstract: 1011-963P OPP11213 TP07074
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tp07074nov-10-2010opp112131011-963p+2 | |
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Contextual Info: AON6408 30V N-Channel MOSFET General Description Product Summary The AON6408 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is for PWM applications. VDS (V) = 30V ID = 25A (VGS = 10V) |
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aon6408 | |
marking za sc-88AContextual Info: INTEGRATED CIRCUITS 74HC1G125; 74HCT1G125 Bus buffer/line driver; 3-state Product specification File under Integrated Circuits, IC06 Philips Sem iconductors 1998 Nov 10 PHILIPS Philips Semiconductors Product specification Bus buffer/line driver; 3-state 74HC1G125; 74HCT1G125 |
OCR Scan |
74hc1g12574hct1g125245106/00/01/pp16nov10+1 | |
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ferrite core ups schematic
Abstract: TDK FILTER CF LPO6013-103K LQH2MCN4R7M02L LQH32CN100K53L LQH32CN4R7M53L RLF5018T-100MR94 SP6656
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sp6656400ma625masp6656er3/tr+8 | |
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Contextual Info: AON6426 30V N-Channel MOSFET General Description Product Summary The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications. |
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aon6426 | |
AWG35
Abstract: TP08027 OPP10078 4fl1 FL1100
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tp08027hp-4284anov-10-2010opp10078+7 | |
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Contextual Info: SDZ Z6V8 8WAU U ZENER DIOD DE Sm mall Sig gnal Zener Dio ode Ge eneral De escription n Th hese diodess small signa al Zener dio odes, fabriccated in plan nar tecchnology. Miniature M surface moun nt package is excellent for ha and-held and d portable applications |
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ot-32329-nov-10ksd-d5d011-001 | |
EN61000-4-2
Abstract: DPX40-24T0512
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en55022ts-35/7ts-35/15dpx40w+3 | |
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Contextual Info: Data Sheet Mechanical Drawing Dot for pin 1 28.5 MAX TO09161 YYWW General Information Customer Part Number Revision Description Date Reference Doc Control # Issue For ICE use only Item Inductance (HP-4284A) Leakage Inductance DCR TO09161 3 Transformer NOV-10-2010 |
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hp-4284ao09161nov-10-2010opp11142+5 | |
W83791
Abstract: NPN transistor 2n 3904 temperature sensor 5VSB fan speed control circuit using lm358
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w83792ad/dw83792ag/gw83792ad/ag/d/gaug-27-2003+8 | |
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Contextual Info: AON6408 30V N-Channel MOSFET General Description Product Summary The AON6408 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is for PWM applications. VDS (V) = 30V ID = 25A (VGS = 10V) |
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aon6408 | |
NVIDIA
Abstract: NVIDIA nv34 NVIDIA 8800 lm358 application note nvidia ge 8800 NVIDIA GPU W83792AD W83792D PIN25 marking code a4 2b diode
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w83792ad/dw83792ag/gw83792ad/ag/d/gaug-27-2003+14 | |
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Contextual Info: AON6426 30V N-Channel MOSFET General Description Product Summary The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications. |
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aon6426 | |