NI1230S Search Results

NI-1230S

Contextual Info: MRF6VP41KHSR7 Information General information Package information Environmental and Compliance information Manufacturing and Qualification information Ordering information General Information Parameter Value Part Number MRF6VP41KHSR7 Description VHV6 450MHZ1000W NI1230S

mrfe6vp5600hs

Abstract: MRFE6VP5600H
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

ATC200B103KT50X

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with

ATC600F0R1BT250XT

Contextual Info: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for

Contextual Info: Document Number: MRF8S18260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with

TRANSISTOR J477

Abstract: TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

ATC100B390JT500XT

Abstract: ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

C3225X7R2A225KT

Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices

MRF6VP3450H

Abstract: MRF6VP3450H 470-860 MRF6VP3450HR5 DVB-T Schematic MRF6Vp3450 MRF6VP3450HR6 ATC100B331 ATC800B ATC800B100J500XT ATC100B331GT500XT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3450H Rev. 4, 4/2010 RF Power Field Effect Transistors MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

250GX-0300-55-22

Abstract: Arlon AN1955 MRF6VP121KHR6 MRF6VP121KHSR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1006H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1006HR5 MMRF1006HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

DB3-5D

Abstract: ATC800B J137 74 AN1955 C3225X7R1H225KT DB35D MRF8S19260HSR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S19260H Rev. 0, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S19260HR6 MRF8S19260HSR6 Designed for CDMA and multi - carrier base station applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices

Contextual Info: Document Number: MRF8S19260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S19260HR6 MRF8S19260HSR6 Designed for CDMA and multicarrier base station applications with

TRANSISTOR J477

Abstract: TRANSISTOR J477 48 AFT18HW355S C5750Y5V1H226Z
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

2a258 transistor

Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii

transistor j307

Abstract: j352 sk063
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18H357-24S Rev. 0, 3/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to

MMZ20363B

Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
Contextual Info: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless

MRF8P182

Abstract: ATC600F0R1BT250XT atc600f150jt250xt
Contextual Info: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 0, 1/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMRF1013H Rev. 0, 7/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF power transistors designed for aerospace and defense S-band radar pulse applications operating at frequencies between 2700 and 3200 MHz.