NFD410 Search Results

R6095

Contextual Info: Back to FETs il\M E S ^ NFD410 M W^NEW ENGLAND SEMICONDUCTOR ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage Vos Gate-Source Voltage

NFD500

Abstract: NFD100 NFD200 NFD300 NFD310 NFD400 NFD410 NFD460 NFD600 NSQ6659
Contextual Info: N EW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL DUAL PACKAGE 6 PIN SIP BVdss VOLTS Id AMPS RoS on @0.5 ID OHMS Qg NFD600 600 11.0 0.6 NFD500 500 14.0 NFD460 500 NFD410 DEVICE TYPE Ciss Pf Pd WATTS 105 1880 125 0.4 105 1880 125 20.0 0.25 130 2950 125 400

NFD100

Abstract: NFD200 NFD300 NFD310 NFD400 NFD410 NFD460 NFD500 NFD600 NSQ6659
Contextual Info: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL DUAL PACKAGE 6 PIN SIP DEVICE TYPE NFD600 NFD500 NFD460 NFD410 NFD400 NFD310 NFD300 NFD200 NFD100 ^D S on BVdss VOLTS Id AMPS @0.5 ID OHMS Qg Ciss Pf Pd WATTS 600 500 500 400 400 350 350 200 100 11.0 0.6 0.4

HA 1370

Abstract: NFD410
Contextual Info: NFD410 ^ M W^NEW ENGLAND SEMICONDUCTOR ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted SYMBOL PARAMETERS / TEST CONDITIONS Drain-Source Voltage Vos Gate-Source Voltage Vas Continuous Drain Current

Contextual Info: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL DUAL PACKAGE 6 PIN SIP Mr RdS oii @0.5 ID OHMS Qg VOLTS Id AMPS nc Ciss Pf Pd WATTS NFD600 600 11.0 0.6 105 1880 125 NFD500 500 14.0 0.4 105 1880 125 NFD460 500 20.0 0.25 130 2950 125 NFD410 400 20.0 0.2 130

CP666

Abstract: CP640 TO-213AA CP664
Contextual Info: FETS Page 1 of 7 Next Home Package Device Type BVDSS Volts RDS on @ 0.5 ID Ohms ID Continuous Amps IDM Pulse Drain Current Amps TO-5 NES130/5 100 0.18 8 32 25 TO-5 NES230/5 200 0.40 5.5 22 25 TO-213AA/66 NSFJ1000 1000 4.2 3.0 10 70 TO-213AA/66 NSFJ120 100