NESM240 Search Results

NESM240 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NESM240	New England Semiconductor	TRANS MOSFET N-CH 200V 18A 3TO-254	Scan	PDF	42.08KB	1
NESM240	New England Semiconductor	POWER MOSFET N CHANNEL	Scan	PDF	42.09KB	1
NESM240Z	New England Semiconductor	TRANS MOSFET N-CH 200V 18A 3TO-254Z	Scan	PDF	42.08KB	1
NESM240Z	New England Semiconductor	POWER MOSFET N CHANNEL	Scan	PDF	42.09KB	1

NESM240 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: <;w ^ IP Back to FETs NESM240 NESM240Z NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS on • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc - 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS	OCR Scan	NESM240 NESM240Z O-254	PDF
2x15 Abstract: NESM240 NESM240Z Contextual Info: 0 /V E F ^ IP NESM240 NESM240Z NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING R DS o n ABSOLUTE MAXIMUM RATINGS (Tc - 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS	OCR Scan	NESM240 NESM240Z O-254 O-254 2x150 2x15 NESM240Z	PDF
CP666 Abstract: CP640 TO-213AA CP664 Contextual Info: FETS Page 1 of 7 Next Home Package Device Type BVDSS Volts RDS on @ 0.5 ID Ohms ID Continuous Amps IDM Pulse Drain Current Amps TO-5 NES130/5 100 0.18 8 32 25 TO-5 NES230/5 200 0.40 5.5 22 25 TO-213AA/66 NSFJ1000 1000 4.2 3.0 10 70 TO-213AA/66 NSFJ120 100	Original	O-213AA/66 CP666 CP640 TO-213AA CP664	PDF

Catalog Datasheet

Type

Document Tags

PDF

Contextual Info: <;w ^ IP Back to FETs NESM240 NESM240Z NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW R DS on • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc - 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS

OCR Scan

NESM240 NESM240Z O-254

PDF

2x15

Abstract: NESM240 NESM240Z
Contextual Info: 0 /V E F ^ IP NESM240 NESM240Z NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW • LOW DRIVE REQUIREM ENT • DYNAMIC d v / d t RATING R DS o n ABSOLUTE MAXIMUM RATINGS (Tc - 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS

OCR Scan

NESM240 NESM240Z O-254 O-254 2x150 2x15 NESM240Z

PDF

CP666

Abstract: CP640 TO-213AA CP664
Contextual Info: FETS Page 1 of 7 Next Home Package Device Type BVDSS Volts RDS on @ 0.5 ID Ohms ID Continuous Amps IDM Pulse Drain Current Amps TO-5 NES130/5 100 0.18 8 32 25 TO-5 NES230/5 200 0.40 5.5 22 25 TO-213AA/66 NSFJ1000 1000 4.2 3.0 10 70 TO-213AA/66 NSFJ120 100

Original

O-213AA/66 CP666 CP640 TO-213AA CP664

PDF