NEL2004F02 Search Results

NEL2004F02 Datasheets (3)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NEL2004F02-24		NEC	NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR	Original	PDF	37.92KB	4
NEL2004F02-24		NEC	NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier	Original	PDF	93.77KB	12
NEL2004F02-24-AZ		NEC	TRANS GP BJT 30V 1.5A	Original	PDF	93.76KB	12

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NEC Electronics Group NEL2004F02-24 Trans GP BJT NPN 30V 1.5A 3-Pin
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	NEL2004F02-24		20		1	1 $18.00 10 $16.56 100 $16.56 1000 $16.56 10000 $16.56	Buy Now
Quest Components ()	NEL2004F02-24		16			1 $36.00 10 $34.20 100 $32.40 1000 $32.40 10000 $32.40	Buy Now
	NEL2004F02-24		16			1 $19.50 10 $19.50 100 $19.50 1000 $19.50 10000 $19.50	Buy Now

NEL2004F02 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
C 5478 transistor Abstract: transistor 5478 7807 transistor resistor 39 ohm NEL2004 1N4454 1N5254 NEL2004F02-24 173278 LARGE SIGNAL IMPEDANCES Contextual Info: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) BASE 3±0.2 2±0.2 2±0.2 2 X φ3.2±0.3	Original	nel2004f02-24 24-hour c 5478 transistor transistor 5478 +77807 transistor resistor 39 ohm nel2004 1n4454 1n5254 173278 large signal impedances	PDF
C 5478 transistor Abstract: transistor 5478 7807 transistor NEL2004 1N4454 1N5254 NEL2004F02-24 resistor 39 ohm diode 1n4454 Contextual Info: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB BASE • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) 3±0.2 2±0.2 5.85±0.2 EMITTER	Original	nel2004f02-24 24-hour c 5478 transistor transistor 5478 +67807 transistor nel2004 1n4454 1n5254 resistor 39 ohm diode 1n4454	PDF
VO6C Abstract: NEL2004 NEL2035 NEL2001 NEL2004F02-24 NEL2012 VO-6C Contextual Info: DATA SHEET SILICON POWER TRANSISTOR NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and 2 2 ±0.2 3 ±0.2 2 ±0.2	Original	nel2004f02-24 vo6c nel2004 nel2035 +3nel2001 nel2012 vo-6c	PDF
C 5478 transistor Contextual Info: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES OUTLINE DIMENSIONS NEL2004F02-24 Units in mm HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched HIGH LINEAR GAIN: 12.0 dB Class A, 10.0 dB Class AB	OCR Scan	nel2004f02-24 nel2004f02-24isan th-19 24-hour +1c 5478 transistor	PDF
C 5478 transistor Abstract: 7807 transistor transistor 5478 TRANSISTOR c 5478 LARGE SIGNAL IMPEDANCES "class AB Linear" Contextual Info: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 1.5 W Class A, 7 W Class AB PACKAGE OUTLINE F02 USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) HIGH LINEAR GAIN: 12.0 dB Class A, 10.0 dB Class AB	OCR Scan	nel2004f02-24 c 5478 transistor 7807 transistor transistor 5478 +3transistor c 5478 large signal impedances class ab linear	PDF
C 5478 transistor Abstract: 7807 transistor LM 1709 Contextual Info: NPN SILICON BIPOLAR NEL2004F02.24 L - BAND POWER TRANSISTOR OUTLINE DIMENSIONS FEATURES_ Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) • HIGH LINEAR GAIN:	OCR Scan	nel2004f02 nel2004f02-24 the83 c 5478 transistor +27807 transistor lm 1709	PDF
NEL2001 Abstract: NEL2000 DB15F NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 nec microwave Contextual Info: DATA SHEET SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PC N/PC S base station applications.	OCR Scan	nel2000 nel200101-24 nel2004f02-24 nel2012f02-24 +7nel2035f03-24 nel2001 db15f nel2004 nel2012 nel2035 nec microwave	PDF
NEL2000 Abstract: NEL2001 NEL200101-24 NEL2004 NEL2004F02-24 NEL2012 NEL2012F02-24 NEL2035 NEL2035F03-24 Class AB AMPLIFIER 4W Contextual Info: DATA SHEET SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.	Original	nel2000 p10381ej3v1ds00 nel2001 nel200101-24 +7nel2004 nel2004f02-24 nel2012 nel2012f02-24 nel2035 nel2035f03-24 class ab amplifier 4w	PDF
2SK2396A Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The	Original	p10100ej6v0sg00 2sk2396a nec 2sk2396a k2396a +6pc1658 2sc2407 uaa 1006 k2396 k2597 marking code saw mos transistor	PDF
LDB 107 Contextual Info: DATA SHEET NEC SILICON POWER TRANSISTOR NEL2000 SERIES NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier DESCRIPTION AND APPLICATIONS NEL2000 series of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.	OCR Scan	nel2000 p10381ej3v1ds00 ldb 107	PDF
UAA 1006 Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71 Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH	Original	d-40472 i-20124 i-00139 d-30177 +15gb-mk14 d-81925 s-18322 f-78142 e-28007 uaa 1006 manual* cygnus sl 5000 transistor marking t79 ghz pc1658g nec ga fet marking code t79 gaas fet t79 pc1658 mc-7712 2sc5431 nec u71	PDF
NEM0899F01-30 Contextual Info: Discrete Power Devices Selection Guide, 2-2 Power Devices Selection Guide US BAND INTERNALLY MATCHED GaAs DEVICES Typical Specifications @ Ta = 25'C » r u-v w i JL ct Ruawini i Part Number Frequency Range PidB GHz (dBm) Linearity Linear Power Added	OCR Scan	nes1821b-30 nes1821p-50 nes2527b-30 nez3436-30e +4nel200101-24 nel2004f02-24 nel2012f03-24 nem0899f01-30	PDF
NEM0899F01-30 Abstract: BL 130 301 Contextual Info: VHF Silicon MOSFET for Broadcast/Base Station T Y H Ç tt. ¡m t :fittaafar • iw u y i I V»* : ■m' w h iá * NEM0899F01-301 NEM0995F01-301 new> F011 F011 460 to 860 820 to 960 Poirr P out dBm (W) Gain Efficienc (dBm) (%) 30 AB 50 100 12 30 AB 49.8 95	OCR Scan	nem0899f01-301 nem0995f01-301 nel200101-24 mc-7852 +6mc-7856 50-860m mc-7862 mc-7866 nem0899f01-30 bl 130 301	PDF
NEL2004F02-24 Abstract: F 323 Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. F02 BASE 3±0.2 2±0.2 2±0.2 2 X f 3.2±0.3 2.58±0.3 EMITTER EMITTER 5.85±0.2 EMITTER EMITTER COLLECTOR 3.6±0.5 3.6±0.5 12.4±0.2	Original	nel2004f02-24 l2004 24-hour f 323	PDF