NE550 Search Results

NE550

Abstract: 8t90 SE550 negative floating regulator SE550L
Contextual Info: SE/NE550-F.L.N DESCRIPTION FEATURES The 550 is a precision m onolithic voltage regulator capable of positive or negative supply operation as series, shunt, switching or floating regulator. Guaranteed line regu­ lation is provided for input voltages ranging

ne550n

Abstract: NE550 NE550L Signetics SE 540 SE550 ITT Voltage Regulator
Contextual Info: S ig n e tic s integrated Circuits - Voltage Regulator NE550 Precision Adjustable Voltage Regulator G E N E R A L D E S C R IP T IO N T h e 5 5 0 is a p re c is io n m o n o lit h ic v o lta g e re g u la to r ca pa ble o f p o s itiv e o r n e g a tive s u p p ly o p e ra tio n as series, s h u n t,

NE5500179A

Abstract: ldmos nec
Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier

nec 1678

Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm

Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm WSi gate lateral-diffusion

Contextual Info: NE550G Linear ICs Adjustable Positive Voltage Regulator status Military/High-RelN Load Current Max. A 150m Min. Adjustable Output Voltage4.5 Max. Adjustable Output Voltage30 Output Voltage Nominal (V)5.0 Drop-Out Volt Max.3.0 P(D) Max. (W)800m Nom. Supp (V)50

Contextual Info: NE550F Linear ICs Adjustable Positive Voltage Regulator status Military/High-RelN Load Current Max. A 150m Min. Adjustable Output Voltage1.2 Max. Adjustable Output Voltage40 Output Voltage Nominal (V)40 Drop-Out Volt Max.3.0 P(D) Max. (W)800m Nom. Supp (V)40

GSM1800

Abstract: GSM1900 NE5500179A NE5500179A-T1
Contextual Info: 4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm • HIGH POWER ADDED EFFICIENCY:

nec 2501

Abstract: nec RF package SOT89 NE5500134 nec marking power amplifier NEC MARKING CODE code marking NEC date code marking NEC FET SOT-89 N-Channel HS350 sot89 fet
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500134 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate

Contextual Info: NE550N Linear ICs Adjustable Positive Voltage Regulator status Military/High-RelN Load Current Max. A 150m Min. Adjustable Output Voltage1.2 Max. Adjustable Output Voltage40 Output Voltage Nominal (V)40 Drop-Out Volt Max.3.0 P(D) Max. (W)800m Nom. Supp (V)40

NE5500179A

Abstract: NE5500179A-T1 VP215
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm

NE5500234

Abstract: nec RF package SOT89 nec 2501 marking v2 FRS transceiver NE5500234-T1-AZ
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500234 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS DESCRIPTION The NE5500234 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for DCS1800 and PCS1900 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate

ne5500479a-t1

Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using NEC’s NEWMOS technology NEC’s 0.6 µm WSi gate lateraldiffusion MOS FET and housed in a surface mount package. The device can deliver 31.5 dBm output power with

NE5500479A

Abstract: NE5500479A-T1 VP215 ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LDMOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm WSi gate laterally diffused

NE5500434

Abstract: nec RF package SOT89 nec 2501
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500434 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate lateral MOS

transistor NEC D 882 p

Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor nec 618 nec 882 datasheet transistor NEC 882 p NE5500179A NE5500179A-T1 VP215
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC’s NEWMOS technology NEC’s

Contextual Info: NE550A Linear ICs Adjustable Positive Voltage Regulator status Military/High-RelN Load Current Max. A 3.0m Min. Adjustable Output Voltage1.2 Max. Adjustable Output Voltage37 Output Voltage Nominal (V)19 Drop-Out Volt Max.3.0 P(D) Max. (W)800m Nom. Supp (V)40

NE550A

Abstract: NE550-A SE550L NE550
Contextual Info: SE550-L NE550-A, L FEATURES PIN CONFIGURATION • LINE REGULATION GUARANTEED OVER INPUT VOLTAGE RANGE OF B.5 VOLTS TO AS HIGH AS 50 VOLTS. • OUTPUT VOLTAGE CONTINUOUSLY ADJUSTABLE FROM 2 VOLTS TO 40 VOLTS > ,01%LINE AND LOAD REGULATION . ADJUSTABLE LIMITING OF SHORT CIR­

NE5500234

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

12/24 v dc-dc converter schematic

Abstract: Capacitor 0.01 uF GR-1089 GR-63-CORE IEC60950-1 SR-332 TPSC106M025R0500 HDS48T3012-NCB0 UL60950-3RD
Contextual Info: HDS48T30120 DC-DC Converter Data Sheet Half-Brick with 48 VDC Input; 12 VDC @ 30A Output Features • • • • • • • • • • • • • Applications • Power systems utilizing Intermediate Bus Architecture • Networking equipment • Data/voice processing

L298D

Abstract: SAS251S4 ugn3013 SAS251 UCN4815A ULN3782M UDN2981LW uc3646 mc1417p CA1725E
Contextual Info: AMS-105 GENERAL INFORMATION SEMICONDUCTOR CROSS REFERENCE in Alpha-Numerical Order The suggested Allegro replacement devices are based on similarity as shown in currently published data. Exact replacement in all applications is not guaranteed and the user should compare the specifications of the competitive and recommended Allegro replacement. Special caution must be exercised in attempting to do a reverse cross. In some instances, the competitive device is obsolete; in

hbc48t25120

Abstract: TR-332
Contextual Info: HBC48T25120 DC-DC Converter Data Sheet 36-75 VDC Input; 12 VDC @ 25 A Output Features Applications • • • • Telecommunications Data communications Wireless communications Servers, workstations Benefits • Cost-effective, single board design with optional