N3018 Search Results

N3018

Abstract: 2SA1697 2SC4474 ITR04180 ITR04181 ITR04182 ITR04183 ITR04184
Contextual Info: 注文コード No. N 3 0 1 8 2SA1697/2SC4474 No. N3018 20800 2SA1697 / 2SC4474 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高精細度 CRT ディスプレイビデオ出力用 用途 ・高精細度 CRT ディスプレイビデオ出力 , 広帯域アンプ。

N3018SS

Abstract: N3018
Contextual Info: N3018SSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT ADVANCE INFORMATION V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 21mΩ @ VGS = 10V 7.3A • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed

N3018

Contextual Info: N3018SSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary N EW PRODU CT ADV AN CE I N FORM AT I ON V BR DSS RDS(ON) max ID max TA = 25°C 21mΩ @ VGS = 10V 7.3A • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed

N3018

Contextual Info: N3018SSD 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C • • 100% UIS (Avalanche) Rated 22mΩ @ VGS = 10V 6.7A • ESD Protected Gate 30mΩ @ VGS = 4.5V 5.2A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

N3018SS

Abstract: N3018
Contextual Info: N3018SSS 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 21mΩ @ VGS = 10V 7.3A 35mΩ @ VGS = 4.5V 5.5A V(BR)DSS NEW PRODUCT ADVANCE INFORMATION Features and Benefits •       30V Low On-Resistance

Contextual Info: N3018SSD 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 20mΩ @ VGS = 10V 6.7A 30mΩ @ VGS = 4.5V 5.2A NEW PRODUCT ADVANCE INFORMATION V(BR)DSS 30V Features Description • • Low On-Resistance 100% UIS (Avalanche) rated