MW511 Search Results

MW500

Abstract: MW511
Contextual Info: MW511 VCOS FOR WCDMA APPLICATIONS SPECIFICATIONS Frequency Range: 2162 MHz @ 0.3V 2255 MHz @ 2.7V Phase Noise: @10 kHz: ≤-97 dBc/Hz @100 kHz: ≤-117 dBc/Hz Tuning Sensitivity: ≥40 MHz/V Spurious Response 2nd Harmonics : ≤-10 dBc Output Power: 9±3 dBm

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7984-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 4 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 45.0 d B m at 7.9 G H z to 8 .4 G H z

TIM7785-16

Abstract: fet toshiba
Contextual Info: TOSHIBA TIM7785-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package

TIM7785-14L

Contextual Info: TOSHIBA TIM7785-14L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 41.5 dBm at 7.7 GHz to 8.5 GHz

TIM7785-16L

Contextual Info: TOSHIBA TIM7785-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.7 GHz to 8.5 GHz

Contextual Info: TOSHIBA TIM7984-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM 3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power * pidB = 45.0 dBm at 7.9 G H z to 8.4 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power - PldB = 44.5 dBm at 7.7 GHz to 8.5 GHz

TIM8596-4

Contextual Info: TOSHIBA TIM8596-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package

TIM7984-30L

Contextual Info: TOSHIBA TIM7984-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 45.0 dBm at 7.9 GHz to 8.4 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • L o w in te rm o d u la tio n d is to rtio n - IM 3 = -4 2 d B c a t Po = 3 1 .5 d B m , - S in g le c a r rie r le ve l • H ig h p o w e r

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7984-14L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-|dB = 42.0 dBm at 7.9 GHz to 8.4 GHz

Contextual Info: TOSHIBA TIM7785-16SL MICROWAVE POWER GaAs FET PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, Single Carrier Level • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.7 GHz to 8.5 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, Single Carrier Level • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PldB = 33.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G idB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P-idB = 36.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PidB = 39.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 6.0 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA TIM7984-14L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -43 d B c a t Po = 3 1 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 42.0 d B m at 7.9 G H z to 8 .4 G H z

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM3 = -43 d B c a t Po = 3 4 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P -ld B = 4 4 .5 d B m at 7.7 G H z to 8 .5 G H z

TIM8596-2

Abstract: toshiba fet
Contextual Info: TOSHIBA TIM8596-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-14L Low Distortion internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 41 '5 dBm at 7.7 GHz to 8.5 GHz

TIM7785-30L

Contextual Info: TOSHIBA TIM7785-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 44.5 dBm at 7.7 GHz to 8.5 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PidB = 33.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package