MW400 Search Results

DCS-1800

Abstract: GSM-900 MW400 Micronetics Wireless vco 900 1800 mhz GSM part number
Contextual Info: NEW! VCOS FOR THE REALWORLD The new MW400 Series is one of Micronetics Wireless smallest, most versatile, and low cost commercial VCO families. At .315”x .236”x .075”, the MW400 is ideal for use in handsets, as well as in mobile radios and subscriber units

50hz to 60hz converter circuit diagram

Abstract: MIL-STD-1299 3 phase bridge rectifier 400HZ 60hz to 50hz converter circuit diagram DDME-24H7S-J martek power MIL-STD-129 MILSTD704A 115 vac SINGLE phase bridge rectifier dc-dc converter 380V
Contextual Info: MW400S 400 Watts Output Power ACTIVE POWER FACTOR CORRECTION & ISOLATED DC OUTPUT MODULE HOW TO ORDER MW FEATURES 400 - S • Meets Harmonic Requirements of MIL - STD - 1399 • Meets CE101 and CE102 of MIL - STD - 461 No external filter required • Meets all requirements of MIL - STD - 704E

50hz to 60hz converter circuit diagram

Contextual Info: www.martekpower.com MW400S 400 Watts Output Power ACTIVE POWER FACTOR CORRECTION & ISOLATED DC OUTPUT MODULE HOW TO ORDER MW FEATURES 400 - S M / 28 - I Series I - M3 inserts Total Output Power W Single Output Unscreened (I) or Screened(M) Output Voltage

Contextual Info: www.martekpower.com TABLE OF CONTENTS MW400S SINGLE PHASE, UNIVERSAL AC INPUT . 2 400 watts active power factor correction and isolated DC Output module PERFORMANCE CHARACTERISTICS . 5

Contextual Info: TOSHIBA TPM1818-30 MICROWAVE POWER GaAs FET High Power GaAs FETs L, S-Band Features • High power • P-idB = 44.5 dBm at 1.8 GHz • High gain - G idB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)

TPM2323-30

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM2323-30 High Power GaAs FETs L, S-Band Features • High power - P1dB = 44.5 dBm at 2.3 GHz • High gain - G1dB = 11.5 dB at 2.3 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)

toshiba fet

Abstract: TPM2626-14
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-14 High Power GaAs FETs L, S-Band Features • High power - P1dB = 42.0 dBm at 2.6 GHz • High gain - G1dB = 12.0 dB at 2.6 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)

MW400

Abstract: MW412
Contextual Info: MW412 VCOS FOR EGSM APPLICATIONS SPECIFICATIONS Frequency Range: 668 MHz @ 1V 703 MHz @ 4V Tuning Sensitivity: <1.5:1 MHz/V Supply Voltage: +5V Phase Noise: @200 kHz: ≤-125 dBc/Hz @400 kHz: ≤-135 dBc/Hz Supply Current: <20 mA Harmonic Suppression: -20 dBc

MW419

Abstract: MW400
Contextual Info: MW419 VCOS FOR CORDLESS APPLICATIONS SPECIFICATIONS Frequency Range: 1662 MHz @ 1V 1742 MHz @ 4V Phase Noise: @10 kHz: ≤ -95 dBc/Hz @100 kHz: ≤ -115 dBc/Hz Tuning Sensitivity: ≥ 26.7 MHz/V Spurious Response 2nd Harmonics : -20 dBm Output Power: 7 ± 3 dBm

PDTA144E

Abstract: lqfp-176 pcb LAYOUT VARTA L2 400 max1909 915gm c838 transistor transistor C730 foxconn transistor c708 transistor C715 Transistor HA17
Contextual Info: 1 A B C 2 3 4 5 6 7 8 Schematics Page Index Title / Revision / Change Date Page Title of Schematics Page Title of Schematics Page Rev. Date Page 01 Title 0.2 050523 26 SCREW HOLE & PAD 02 BLOCK DIAGRAM 0.2 050523 27 MINI-PCI 03 Dothan(HOST BUS) 1/2 0.2 050523 28 LAN (82562ET)

Contextual Info: MW40F series 40 Watt Medical Grade AC Adapter 5.0" [127.0 mm] 3.0" [76.2 mm] 1.30" [33.0 mm] Features Electrical Specifications Wide range AC input Fully regulated output High efficiency Medical grade approval Also available in white 5 year warranty RoHS Compliant

MW400

Abstract: MW403
Contextual Info: MW403 VCOS FOR PCS TX APPLICATIONS SPECIFICATIONS Frequency Range: 1850 MHz @ .50V 1910 MHz @ 2.5V Tuning Sensitivity: <1.5:1 MHz/V Supply Voltage: +3V Phase Noise: @10 kHz: ≤-95 dBc/Hz @400 kHz: ≤-125 dBc/Hz Supply Current: <10 mA Harmonic Suppression:

MW400

Abstract: MW405
Contextual Info: MW405 VCOS FOR PHS APPLICATIONS SPECIFICATIONS Frequency Range: 1160 MHz @ .50V 1185 MHz @ 2.5V Phase Noise: @10 kHz: ≤-96 dBc/Hz @400 kHz: ≤-128 dBc/Hz Tuning Sensitivity: ≥12.5 MHz/V Spurious Response 2nd Harmonics : ≤20 dBc Output Power: 0±3 dBm

MW400

Abstract: MW406
Contextual Info: MW406 VCOS FOR PHS APPLICATIONS SPECIFICATIONS Frequency Range: 890 MHz @ .50V 915 MHz @ 2.5V Phase Noise: @10 kHz: ≤-98 dBc/Hz @400 kHz: ≤-130 dBc/Hz Tuning Sensitivity: ≥12.5 MHz/V Spurious Response 2nd Harmonics : ≤-10 dBc Output Power: 1±3 dBm

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-14 High Power GaAs FETs L, S-Band Features • High power - P idB = 42.0 • High gain dBm at 2.6 GHz - G idB = 12.0 dB at 2.6 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM2323-30 High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 dBm at 2.3 GHz • High gain - G idB = 11.5 dB at 2.3 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)

TPM2626-30

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-30 High Power GaAs FETs L, S-Band Features • High power - P1dB = 44.5 dBm at 2.6 GHz • High gain - G1dB = 11.5 dB at 2.6 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-14 High Power GaAs FETs L, S-Band Features • High power - P idB = 42.0 dBm at 2.6 GHz • High gain - G-icb = 12.0 dB at 2.6 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-30 High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 dBm at 2.6 GHz • High gain - G-idB = 11.5 dB at 2.6 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)

CISPR-11

Abstract: din 4148 EN60601-1 MWB100 DIN 8 plug MW1212-760-NC-BK dc plug CISPR11
Contextual Info: 952-2012.qxp:QuarkCatalogTempNew 8/29/12 1:22 PM Page 952 Medical and ITE Desktop Power Supplies MW12: 12 Watt Medical Desktop Power Supply RoHS Specifications: ᭤ Floating Output ᭤ 5-Year Limited Warranty ᭤ Approvals: EN60601-1, Class II, CISPR11 ᭤ 100-240 VAC, 47-63 Hz Universal Input

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-30 High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 dBm at 1.8 GHz • High gain - G-idB = 12 dB at 1.8 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM2323-30 High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 dBm at 2.3 GHz • High gain - G-idB = 11.5 dB at 2.3 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-14 High Power GaAs FETs L, S-Band Features • High power " P-idB = 42.0 • High gain dBm at 1.8 G H Z - G idB = 14.0 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)

u432

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM2323-30 High Power GaAs FETs L, S-Band Features • High power " P-ldB = 4 4 .5 d B m a t 2 3 G H z • High gain - G i dB = 11.5 dB at 2.3 G H z • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)