MV66030 Search Results

Contextual Info: OCT 2 9 1990 SEPTEM B ER 1990 PLE8SEY SEM ICO N D U CTO RS^ MV66030 64-WORD x 9-BIT FIRST-IN FIRST-OUT MEMORY Supersedes edition in August 1987 High S p e e d D a ta Products 1C Handbook T h e M V66030 is an a syn ch ro n o u s firs t-in firs t-o u t m em ory,

Contextual Info: GEC P L E S S E Y 1~S~E M I C O N D U C T O R S ~ | _ 2074-1.0 MV66030 9-BIT FIRST-IN FIRST-OUT MEMORY The MV66030 is an asynchronous first-in first-out memory, organised as 64 9-bit words. The device accepts a 9-bit

bubble memory plessey

Contextual Info: PLESSEY SEMICO ND UC TO RS TS D e | 722D513 DOObbflfl b |~~ 7220513 P L E S S E Y S E M I C O N D U C T O R S 95D 06688 D/^y^ßS PRELIMINARY INFORMATION MV66030 64-WORD X 9-BIT FIRST-IN FIRST-OUT MEMORY The MV66030 is an asynchronousflrst-in first-out memory,

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Abstract: DG28 dio8
Contextual Info: PRELIMINARY INFORMATION Semiconductors MV61903 1K x 9 PARITY FIFO The MV61903 is one of a new generation of RAM-based FIFOs designed for ease of use. The MV61903 features userprogrammable even or odd parity generation and checking circuitry, and an unencoded parity error flag.

Contextual Info: ^ E i l i E S t o E X _ PRELIMINARY INFORMATION MV61901 1K WORD x 9-BIT FIRST-IN FIRST-OUT MEMORY The MV61901 is a dual port RAM that utilises a special First-In, First-Out algorithm that loads and empties data on a first-in, first-out basis. The device provides full and empty

MV65401

Abstract: MV65401-25
Contextual Info: PLESSEY SEMICO ND UC TO RS TS D e | 7E50S13 ODObVOfi Ö .'J*' 7 2 2 0513 P L E S S E Y SEMI C O N D U C T O R S 95 0 . 0 6 7 0 8 PLESSEY D ^ ¿ '3 5 PRELIMINARY INFORMATION Sem iconductors • MV65401/2/3/4 64-WORD X 4/5-BIT FIRST-IN FIRST-OUT MEMORIES SUPERSEDES MARCH 1987 EDITION

Contextual Info: PRELIMINARY INFORMATION Semiconductors MV61903 1K x 9 PARITY FIFO The MV61903 is one of a new generation of RAM-based FIFOs designed for ease of use. The MV61903 features userprogrammable even or odd parity generation and checking circuitry, and an unencoded parity error flag.

LC28

Abstract: MV61901 MV65030 MV66030
Contextual Info: _ PRELIMINARY INFORMATION MV61901 1K WORD x 9-BIT FIRST-IN FIRST-OUT MEMORY The MV61901 is a dual port RAM that utilises a special First-In, First-Out algorithm that loads and empties data on a first-in, first-out basis. The device provides full and empty

Contextual Info: MARCH 1987 éÊk PLESSE Y PRELIMINARY INFORMATION Semiconductors. MV65030 64-WORD x 9-BIT FIRST-IN FIRST-OUT MEMORY SUPERSEDES SEPTEM BER 1986 E D IT IO N The MV65030 is an asynchronous first-in first-out memory, organised as 64 9-bit words. The device accepts a 9-bit

Contextual Info: OCT 2 \990 PLESSEY SEPTEMBER 1990 S E M IC O N D U C T O R S — MV66401/2/3/4 64-WORD X 4/5-BIT FIRST-IN FIRST-OUT MEMORIES Supersedes edition in August 1987 High Speed Data Products 1C Handbook 402 NC 404 0E 1 18 !] Vcc 2 17 ] SO si C 3 16 ] OR IR[ 15 ]o o

em 513 diode

Abstract: H737
Contextual Info: PLESSEY SE MICO ND UC TO RS TS D E | 7S5DS13 D00t.7B4 T | 7 2 20513 P L E S S E Y S E M I C O N D U C T O R S 95D 06734 PLESSEY D PRELIMINARY INFORMATION S e m ic o n d u c to rs MV61903 y~ ' y < s ~ y s ' 1K X 9 PARITY FIFO The MV61903 is one of a new generation of RAM-based

Contextual Info: APLESSEY W PRELIMINARY INFORMATION S em ico n d u cto rs • MV61902 1K X 9 DIPSTICK" FIFO The MV61902 is one of a new generation of RAM-based FIFOs designed for ease of use. The MV61902 has a userprogrammable flag DIPSTICK which defaults to a conventional ‘half-full’ flag on power-up.

Contextual Info: A W AUGUST 1987 p l e s s e y PRELIMINARY INFORMATION Sem iconductors. M V 61901 1K WORD x 9-BIT FIRST-IN FIRST-OUT MEMORY SUPERSEDES MAY 1987 EDITION The MV61901 is a dual port RAM that utilises a special First-In, First-Out algorithm that loads and empties data on a

DG28

Abstract: LC28 MV65030 MV66030
Contextual Info: MARCH 1987 PRELIMINARY INFORMATION MV65030 64-WORD X 9-BIT FIRST-IN FIRST-OUT MEMORY SUPERSEDES SEPTEM BER 1986 E D IT IO N The MV65030 is an asynchronous first-in first-out memory, organised as 64 9-bit words. The device accepts a 9-bit parallel word, DO - D8, under control of the shift in (SI) input.

Contextual Info: PRELIMINARY INFORMATION S em iconductors MV65030 64-WORD X 9-BIT FIRST-IN FIRST-OUT MEMORY SU P ER SED ES MARCH 1987 EDITION The MV65030 is an asynchronous first-in first-out memory, organised as 64 9-bit words. The device accepts a 9-bit parallel word, DO - D8, under control of the shift in (SI) input.

MV66403

Contextual Info: PLESSEY SEMICONDUCTORS TS 7220513 Ï e | 725DS13 0D0b7Dl S 95D 0 6 7 0 1 PLESSEY SEMICONDUCTORS • PLESSEY PRELIMINARY INFORMATION S em ico n d u cto rs • MV66401/2/3/4 64-WORD x 4/5-BIT FIRST-IN FIRST-OUT MEMORIES 18 ]Vcc 16 3 OR PoC 4 15 . M V 66402 D l[ 5 M V 6 6 4 0 4 iq

ddgt

Contextual Info: PLESSEY SEMICONDUCTORS TS D É 7EEDS13 DDGt.714 3 7 2 2 0 5 1 3 PLESSEY SEMICONDUCTORS At PLESSE Y PRELIMINARY INFORMATION S em iconductors. 1K WORD X M V 61901 9-BIT FIRST-IN FIRST-OUT MEMORY The MV6T901 is a dual port RAM that utilises a special First-In, First-Out algorithm that loads and empties data on a

MV65401

Abstract: DG28 LC28 MV65030 MV66030
Contextual Info: PRELIMINARY INFORMATION MV65030 64-WORD x 9-B IT FIRST-IN FIRST-O UT MEMORY SUPERSEDES M AR C H 1987 E D ITIO N The MV65030 is an asynchronous first-in first-out memory, organised as 64 9-bit words. The device accepts a 9-bit parallel word, DO - D8, under control of the shift in (SI) input.

MV66404

Contextual Info: GEC P L E S S E Y s e m i c o n d u c t o r s ! 2 07 5-1 .0 MV66401/2/3/4 64-WORD X 4/5-BIT FIRST-IN FIRST-OUT MEMORIES The MV66401/2/3/4 are asynchronous first-in first-out memories, organised as 64 by 4 or 5-bit words. Each device accepts a 4/5-bit parallel word, DO - D4, under control of the

MV65401

Contextual Info: Ä FLESSEY W PRELIMINARY INFORMATION Sem iconductors • MV65401/2/3/4 64-WORD x 4/5-BIT FIRST-IN FIRST-OUT MEMORIES The MV65401/2/3/4 are asynchronous first-in first-out memories, organised as 64 by 4 o r 5-bit words. Each device accepts a 4/5-bit parallel word, DO - D4, under control o f the

Contextual Info: "PLESSEY SEMICONDUCTORS TS D Ê| 7ESDS13 ODOb?aS 7 2 2 0 5 1 3 P L E S S E Y SEMIC O N D U C T O R S fl 95D 06725 PLESSEY V T-ÿér2!T PRELIMINARY INFORMATION Semiconductors. M V 6 1 9 0 2 1K x 9 DIPSTICK" FIFO The MV61902 is one of a new generation of RAM-based

MV61901

Abstract: MV65030 MV66030 do-9
Contextual Info: AUGUST 1987 PRELIMINARY INFORMATION MV61901 1K WORD x 9-BIT FIRST-IN FIRST-OUT MEMORY SUPERSEDES M A Y 1987 E D IT IO N The MV61901 is a dual port RAM that utilises a special First-In, First-O ut algorithm that loads and empties data on a first-in, first-out basis. The device provides full and empty

Contextual Info: PLESSEY SEMICONDUCTORS TS D E I 7250513 7 2 2 0 5 1 3 PLESSEY SEMICONDUCTORS DDGtb'iS 95D 0 6 6 9 5 B J~~ 0/~-%~3S PRELIMINARY INFORMATION Sem iconductors i MV65030 64-WORD x 9-BIT FIRST-IN FIRST-OUT MEMORY SUPERSEDES MARCH 1987 EDITION The MV65030 is an asynchronous first-in first-out memory,