MTM131270BBF Search Results
MTM131270BBF Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MTM131270BBF |   | FETs - Single, Discrete Semiconductor Products, MOSF PCH 20V 2A SOT23 | Original | 7 | 
MTM131270BBF Price and Stock
| Panasonic Electronic Components MTM131270BBFMOSFET P-CH 20V 2A MINI3-G3-B | |||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|   | MTM131270BBF | Reel | 
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MTM131270BBF Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| MTM131270BBFContextual Info: Doc No. TT4-EA-13636 Revision. 2 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOSFET Unit: mm For Switching 2.9 0.4 0.16 3  Low Drain-source On-state Resistance : RDS on typ = 92 m  (VGS = -4 V)  Low Drive Voltage : 1.8 V Drive | Original | TT4-EA-13636 MTM131270BBF UL-94 MTM131270BBF | |
| Contextual Info: Doc No. TT4-EA-13636 Revision. 3 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOS FET Unit : mm For switching 2.9 0.4 • Features 0.16  Low Drain-source On-state Resistance : RDS on typ = 92 m  (VGS = -4.0 V)  Low drive voltage: 1.8 V drive | Original | TT4-EA-13636 MTM131270BBF UL-94 | |
| Contextual Info: Doc No. TT4-EA-13636 Revision. 4 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOS FET Unit : mm For switching 2.9 0.4 • Features 0.16  Low Drain-source On-state Resistance : RDS on typ = 92 m  (VGS = -4.0 V)  Low drive voltage: 1.8 V drive | Original | TT4-EA-13636 MTM131270BBF UL-94 | |
| mtm13127Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . MTM13127 Silicon P-channel MOS FET For DC-DC converter circuits For swiching circuits • Overview  Package MTM13127 is the P-channel MOS FET that is highly suitable ofr DC-DC converter and other switching circuits. | Original | 2002/95/EC) MTM13127 MTM13127 MTM131270BBF |