MTK300 Search Results
MTK300 Datasheets (7)
Jiangsu JieJie Microelectronics Co Ltd
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
JMTK3006B
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 70A N-channel enhancement mode power MOSFET in TO-252-3L package with RDS(ON) less than 6.0mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS tested. | Original | ||||
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JMTK3003A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 150A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.4mΩ at VGS=10V, TO-252-3L package, designed for power management and load switching applications. | Original | ||||
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JMTK3005A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 100A N-channel Enhancement Mode Power MOSFET in TO-252-3L package with RDS(ON) less than 4.4mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS tested. | Original | ||||
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JMTK3005L
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Jiangsu JieJie Microelectronics Co Ltd | N-channel MOSFET with 30V drain-source voltage, 90A continuous drain current, RDS(on) less than 4mΩ at VGS=10V, TO-252 package, suitable for power management and load switching applications. | Original | ||||
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JMTK3002B
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 180A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.6m ohm at VGS=10V and 4.3m ohm at VGS=4.5V, available in TO-252-3L package. | Original | ||||
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JMTK3005B
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 90A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 4.4mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and suitability for load switching and power management applications. | Original | ||||
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JMTK3004A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 100A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.6mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and TO-252-3L package for power management and load switching applications. | Original |