MT4LS12832 Search Results

Contextual Info: PRELIMINARY I^ IIC R O N 128K MT4LS12832 32 SRAM MODULE X 128K X 32 SRAM SRAM MODULE LOW VOLTAGE FEATURES • High speed: 17, 20 and 25ns • High-density 512KB design • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply

T4LS

Abstract: CE5 marking
Contextual Info: M I CR ON S E M I C O N D U C T O R INC b?E D • blllS^H GDO^bTH 230 HMRN PRELIMINARY M IC R O N 128K SRAM MODULE X MT4LS12832 32 SRAM MODULE 128Kx 32 SRAM LOW VOLTAGE • • • • • • • • • • High speed: 20*, 25 and 35ns High-density 512KB design

Contextual Info: JUL 14 '993 PRELIMINARY MT4LS12832 128K X 32 SRAM MODULE M IC R O N • SfcMcCONDOCIOR. MC SRAM MODULE 128K X 32 SRAM LOW VOLTAGE FEATURES • High speed: 20*, 25 and 35ns • High-density 512KB design • High-performance, low-power, CMOS double-metal process

Contextual Info: PRELIMINARY R I E R O MT4LS12832 128K X 32 SRAM MOD ULE N SRAM MODULE 128K X 32 SRAM LOW VOLTAGE FEATURES • High speed: 17, 20 and 25ns • High-density 512KB design • High-perform ance, low-power, CM OS double-m etal process • Single +3.3V +0.3V power supply

Contextual Info: PRELIMINARY M IC R O N 128K SRAM MODULE X M T4LS12832 32 SRAM M ODULE 128Kx 32 SRAM LOW VOLTAGE • H ig h sp eed : 20*, 25 an d 35n s • H ig h -d en sity 5 1 2 K B d esig n • H ig h -p e rfo rm a n ce, lo w -p o w er, C M O S d o u b le-m eta l p rocess

Contextual Info: PRELIMINARY M I IC R O N M T4 L S 1 2 8 3 2R 12 8K X 3 2 SR A M M O D U L E 128Kx 32 SRAM SRAM MODULE LOW VOLTAGE FEATURES • High speed: 15,20 and 25ns • High-density 512KB design • High-performance, low-power, CMOS double-metal process • Single +3.3V ±0.3V power supply