MT4C1026 Search Results

TFG11

Contextual Info: I^ IIC R O N MT4C1026 X 1 DRAM 1 MEG DRAM 1 MEG X 1 DRAM DRAM STATIC COLUMN FEATURES PIN ASSIGNMENT Top View • Industry-standard x l pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply

Contextual Info: M IC R O N I MT4C1026 X 1 DRAM 1 MEG 1 MEG X 1 DRAM DRAM DRAM STATIC COLUMN FEATURES • Industry-standard x l pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175m W active, typical

Contextual Info: I^ IC R Q N 1 MEG DRAM 1 MEG X MT4C1026 X 1 DRAM 1 DRAM STATIC COLUMN FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical

Contextual Info: M IC R O N 1 MEG DRAM MT4C1026 X 1 DRAM 1 MEG X 1 DRAM DRAM STATIC COLUMN FEATURES • Industry standard x l pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V ±10% power supply • Low power, 3mW standby; 175mW active, typical

Contextual Info: MT4C1026 1 MEG X 1 DRAM fU llC R O N 1 MEG DRAM X 1 DRAM STATIC-COLUMN o 3D > FEATURES PIN ASSIGNMENT Top View • Industry-standard x l pinout, timing, functions and packages • High-perform ance CM OS silicon-gate process • Single +5V ±10% power supply

rx3e

Abstract: RX-3E NU89 rx3e 8 pin
Contextual Info: MICRON TECHNOLOGY INC fallisi QQ0E047 5 3ÔE D IMRN T - Í Í - 2 3 - l^ 1 MEG X 1 DRAM DRAM S T A T IC FEATURES PIN ASSIGNMENT Top View • Industry standard xl pinout, timing, functions and packages • High performance, CMOS silicon gate process • Single +5V+10% power supply

30-pin simm memory

Contextual Info: [M IC R O N MT8C8026 1MEG x 8 DRAM DRAM MODULE STATIC COLUMN PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30 -pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C8026 is a randomly accessed solid-state

TC511000P-10

Abstract: tc511000 Micron TC511001AP MT4C1026-10
Contextual Info: -1M CMOS X Si £ tt « i& m m CO D y n a m i c y ^ 'f TRAC isax ns TRCY rain (ns) TCAD min (ns) TAH nin (ns) TP rain (ns) R A M (1 0 4 8 5 7 6 x 1 ) ft tt TWCY ain (ns) TDH min (ns) TRWC rain (ns) V D D or V C C (V) 18 P I N m % I DD max (mA) A I DD STANDBY

sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information