MT180 Search Results

connectors he13

Abstract: he14 he14 Tyco HE13 he14 connector mt180 HE13 DATASHEET MT90 -20/connectors HE13
Contextual Info: CONNECTEURS SERIE HE13 ET HE14 VERSIONS MT90 ET MT180 SIMPLE RANGÉE CONNECTORS, SERIES HE13 AND HE14 VERSIONS MT90 AND MT180, SINGLE ROW Spécification de conditionnement 107-15105 26 AVR 06 Rév. E 1. BUT 1. PURPOSE Cette spécification définit les matériels et les méthodes de conditionnement des connecteurs des séries

Contextual Info: |U |IC=RO N 2 MEG DRAM MODULE X MT18D236 36 DRAM MODULE 2 MEG x 36 DRAM FAST PAGE MODE FEATURES • Common RAS control per side pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process. • Single 5V ±10% power supply • All device pins are fully TTL compatible

MT1805

Contextual Info: M IC R O N 512K DRAM MODULE 512K X X MT18D51236 36 DRAM MODULE 36 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT (Top View OPTIONS 72-Pin SIMM (T-12) MT18D51236M/G MARKING • T im ing 60ns access 70ns access 80ns access P ackages L ead less 7 2 -p in SIM M

MT18D236

Contextual Info: [MICRON 2 MEG DRAM MODULE X MT18D236 36 DRAM MODULE 2 MEG X 36 DRAM FAST-PAGE-MODE FEATURES PIN A SSIG N M EN T Top View • Common RAS control per side pinout in a 72-pin single-in-line package • High-performance CM OS silicon-gate process. • Single 5V ±10% power supply

resistor 472g

Abstract: t18d mt180 MTT80 UT18D
Contextual Info: PRELIMINARY M IC R O N 1 M T18D T 172(S), M T18D(T)472 1 MEG, 4 MEG X 72 DRAM M ODULES DRAM 1 MEG, 4 MEG x 72 R J i n n i l l C 8, 32 MEGABYTE, ECC, 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH IVIK J U U L. Cl FEATURES OPTIONS 168-Pin DIMM (DE-13) SOJ version

Mt1800

Abstract: MT-1500-E Pulsar
Contextual Info: QUADRAPHASE MODULATORS Frequency Range MHz Insertion Loss (dB) max. 1 dB Comp. Pt. (dBm) min. Amplitude Balance (dB) max. Phase Balance (Deg) max. 66.5-73.5 7.0 +4 0.4 2.0 1.50:1 MT-70-E 100-120 7.0 +4 0.4 2.0 1.50:1 MT-110-E 220-260 7.0 +4 0.4 3.0 1.50:1

Contextual Info: MICRON S E M I C O N D U C T O R INC b3E J> b l l l S M T OOGfllHS T3fl • MRN m l^ iic n o N 2 MEG DRAM MODULE X MT18D236 36 DRAM MODULE 2 MEG x 36 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Comm on RA S control per side pinout in a 72-pin

MT18D236G6

Contextual Info: l^ iic n o N 2 MEG X MT18D236 36 DRAM MODULE 2 MEG X 36 DRAM DRAM MODULE FAST PAGE MODE FEATURES • Common RAS control per side pinout in a 72-pin single-in-line package • High-performance, CM OS silicon-gate process. • Single 5V ±10% power supply • All device pins are fully TTL compatible

Contextual Info: R /lin S n M I ii^ n w r « MT9D136; W1T18D236 t MEGr 2 MEG x 36 DRAM MODULE 1 MEG, 2 MEG X 36 DRAM MODULE FAST PAGE MODE FEATURES • Common RAS control per side pinout in a 72-pin, single-in-line memory module • High-performance CMOS silicon-gate process.

MT1805

Abstract: D51232
Contextual Info: M IC R O N I Ml — 512K X 32, 1 MEG 512K DRAM MODULE X X M T16D 51232 16 DRAM M O D U LE 32,1 MEG X 16 FAST PAGE MODE MT16D51232 LOW POWER, EXTENDED REFRESH (MT16D51232 L) FEATURES PIN ASSIGNMENT (Top View) • Industry standard pinout in a 72-pin single-in-line

Contextual Info: PRELIMINARY M IC R O N 1 — - MT18D T 172(S), MT18D(T)472 1 MEG, 4 MEG x 72 DRAM MODULES DRAM 1 MEG, 4 MEG x 72 R i l A n i l l C 8’ 32 MEGABYTE, ECC, 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH IVI ^ U U L C FEATURES MARKING • Timing 60ns access 70ns access

MT1805

Abstract: 8D512 w5T marking
Contextual Info: MT18D51236 512K X 36 D R AM M O DU LE |U |IC Z R O N DRAM MODULE 512K x 36 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS 72-Pin SIMM (T-12) M T18D 51236M /G 1 MARKING • Timing 60ns access 70ns access 80ns access Packages Leadless 72-pin SIMM

MT4C4007JDJ

Contextual Info: ADVANCE MICRON MT9D136A X, MT18D236A X 1 MEG, 2 MEG x 36 DRAM MODULES DRAM MODULE 1 MEG, 2 MEG x 36 • TECHNOLOGY, INC. 4, 8 MEGABYTE, 5V, ECC, EDO PAGE MODE FEATURES • Four CAS# ECC pinout in a 72-pin, single-in-line memory module SIMM • High-performance CMOS silicon-gate process

TMZXXX-6516-A3M

Abstract: RRUS 01 B2 TMBX-6517-A1M TMBXX-6517-A2M RRUS 01 B1 RRUS 11 B2 0/TMZXXX-6516-A3M CBC1921-DF-DC-6X V/TMZXXX-6516-A3M TMBXX-6516-A2M
Contextual Info: Wireless Products NSN Remote Radio Deployments Ordering Guide 05/14 Table of Contents Application Diagrams Fiber-to-the-Antenna Roof Top Applications - NSN Radios 4 Fiber-to-the-Antenna Macro Site Applications - NSN Radios 5 RF Path Macro Site Applications

Contextual Info: QUADRAPHASE MODULATORS Insertion Loss dB m ax. 1 dB Com p. Pt. (dBm) m in. A m p litu d e B alan ce (dB) m ax. Phase B alan ce (Deg) m ax. 66.5-73.5 7.0 +4 0.4 2.0 1.50:1 MT-70-E 100-120 7.0 +4 0.4 2.0 1.50:1 MT-110-E 220-260 7.0 :; :;+4 0.4 3.0 1.50:1 MT-240-E

jeida dram 88 pin

Abstract: 4P32 MT16D
Contextual Info: n iC m I n N M T16D 88C 232 2 MEG x 32, 4 MEG x 16 IC D R AM C AR D T IC DRAM CARD 8 MEGABYTES 2 MEG x 32, 4 MEG x 16 PIN ASSIGNMENT End View 88-Pin Card (U-1) MARKING • Timing 60ns access 70ns access 80ns access -6 -7 PIN# SYMBOL P IN * SYMBOL PIN# 1