MSS50 Search Results

MSS50-1400

Abstract: MSS50 IG12
Contextual Info: MSS50 THYRISTOR MODULE . . FEATURES VDRM = VRRM UP TO 1400 V IT RMS = 70 A HIGH SURGE CAPABILITY INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) G1 A2 A1 DESCRIPTION The MSS50 family are constitued of two general purpose SCR. Suitable for AC switching and

MSS50-800

Abstract: RD7M MSS40-1200 MSS40-800
Contextual Info: MSS40, MSS50 Back to back SCR module Table 1. Main features Symbol Value Unit IT RMS 55 and 70 A VDRM/VRRM 800 and 1200 V IGT 50 mA G2 A2 A1 G1 Description ISOTOP Packaged in ISOTOP modules, the MSS40 / MSS50 Series is based on two back-to-back SCR configurations, providing high noise immunity.

Contextual Info: MSS50,146H20 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current10u @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage5.0 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage520m @I(FM) (A) (Test Condition)1.0m

MSS50-1400

Abstract: scr 2500v 100a
Contextual Info: MSS50 THYRISTOR MODULE . . FEATURES VDRM = VRRM UP TO 1400 V IT RMS = 70 A HIGH SURGE CAPABILITY INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) G1 A2 A1 DESCRIPTION The MSS50 family are constitued of two general purpose SCR. Suitable for AC switching and

Contextual Info: jTZJ SGS-THOMSON RfflO ^ S [i[LE©ïï (Q)KilD©i MSS50 THYRISTOR MODULE PRELIMINARY DATASHEET FEATURES • V d rm = V r r m UP TO 1200 V 70 A ■ HIGH SURGE CAPABILITY ■ IT(RMS) = ■ INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) DESCRIPTION The MSS50 family are consist of two general

Contextual Info: MSS50,146B10 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current10u @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage5.0 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage520m @I(FM) (A) (Test Condition)1.0m

MSS40

Abstract: MSS50 55A420
Contextual Info: MSS40 / 50 Series  BACK TO BACK SCR MODULE MAIN FEATURES: Symbol Value Unit IT RMS 55 and 70 A V DRM/VRRM 800 and 1200 V IGT 50 mA A2 G1 G2 DESCRIPTION Packaged in ISOTOP modules, the MSS40 / MSS50 Series is based on two back-to-back SCR configurations, providing high noise immunity.

thyristor 910

Abstract: SCR 70A MSS40 MSS50 Isotop 70A, 1200V scr
Contextual Info: MSS40 / 50 Series BACK TO BACK SCR MODULE MAIN FEATURES: Symbol Value Unit IT RMS 55 and 70 A VDRM/VRRM 800 and 1200 V IGT 50 mA A2 G1 G2 DESCRIPTION Packaged in ISOTOP modules, the MSS40 / MSS50 Series is based on two back-to-back SCR configurations, providing high noise immunity.

Contextual Info: MSS50,000 Series High Barrier Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS50,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum

MSS50-1400

Abstract: DD700 MSS50 TH 46 Thyristor
Contextual Info: Æ 7 SGS-THOMSON IfJCESffllILl'gïïISÎ'SJlD'gl MSS50 THYRISTOR MODULE FEATURES • VDr m =V rrm UPTO1400 V ■ It RMS = 70 A . HIGH SURGE CAPABILITY . INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMS) DESCRIPTION The MSS50 family are constitued of two general

448-e45

Abstract: 048-P86 448-H40 MSS50 B10B mss50 aeroflex 244-B20 018pF
Contextual Info: MSS50,000 Series High Barrier Silicon Schottky Diodes Description Features The Aeroflex / Metelics MSS50,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum

automotive thyristor

Abstract: MSS50-800 MSS50 JESD97 MSS40 MSS40-1200 MSS40-800 MSS50-1200
Contextual Info: MSS40, MSS50 Back to back SCR module Table 1. Main features Symbol Value Unit IT RMS 55 and 70 A VDRM/VRRM 800 and 1200 V IGT 50 mA G2 A2 A1 G1 Description ISOTOP Packaged in ISOTOP modules, the MSS40 / MSS50 Series is based on two back-to-back SCR configurations, providing high noise immunity.

Contextual Info: MSS50,146E20 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current10u @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage5.0 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage520m @I(FM) (A) (Test Condition)1.0m

MSS50-1400

Contextual Info: ^•7# SGS-THOMSON MSS50 THYRISTOR MODULE FEATURES • V d r m = V r r m U P T O 1400 V =70 A . HIGH SURGE CAPABILITY ■ It R M S . INSULATED PACKAGE : INSULATING VOLTAGE 2500 V(RMs) DESCRIPTION The MSS50 family are constitued of two general purpose SCR. Suitable for AC switching and

H11Z

Contextual Info: SCHOTTKY COPLANAR CROSSOVER QUAD H11Z m e t e liC S High Frequency Mixer Series To 4 0 GHz c o r p o r a tio n FEATURES • • • • • • • Extremely Low Junction C apacitance Monolithic Construction Small Physical Size Good Matching of Diode Junctions

Contextual Info: SCHOTTKY CROSSOVER QUAD m e metelics High F req u en cy M ixer Series To 26.5 GHz * CORPORATION FEATURES • • • • • • • Extremely Low Junction Capacitance Monolithic Construction Small Physical Size Good Matching of Diode Junctions Low Series Resistance (4 Ohms)

B46-E45

Abstract: metelics FSCM 59365
Contextual Info: metelics Bridge Quad Five Barrier Heights CORPORATION Features • Extremely low junction capacitance lOOss (lOOff) • Monolithic construction • Small physical size • Good matching of diode junctions • Low series resistance (4 ohms) • Low leakage current (nano amps)

148-E20

Abstract: MSS39 148-H20 bd513
Contextual Info: B5E D METELICS CORP bD513S2 OOOOlbM MSS-39,000 SERIES P-TYPE SCHOTTKY DETECTOR DIODES 1 T * 0 -7 - 0 7 metelics CORPORATION FEATURES • • • • • • Low Rs Extremely Low l/f Noise LowTSS Strong Beam Leads Tight Batch Matching Available Hi-Rel Available MIL-S-19500, MIL-STD-750

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

Contextual Info: NETELICS CORP SbE D • b051352 □□□□Ell ?Ti4 ■ MET SCHOTTKY COPLANAR CROSSOVER QUAD |1 meteliCS High F requency M ixer Series To 4 0 GHz CORPORATION FEATURES • • • • • • • Extremely Low Junction Capacitance Monolithic Construction

TYN604 scr

Abstract: scr TYN604 BTW69-1000N TYN656 X0405XF tyn610 TYN116 tyn112 TYN256 TN1625-800G
Contextual Info: SCR & TRIAC SCRs D2PAK DPAK SOT 223 SOT23 SURFACE MOUNT SCRs Tj max = 125 °C except TS820-xxxB and TS420-xxxB: 110 °C Type IT(RMS) Ta (1) Tl (2) Tc (3) Ttab (4) (A) (°C) VRRM VDRM ITSM (V) (A) IRRM @ IDRM @ Tj max max (mA) Tj = 25°C dv/dt di/dt 67% V

triac sot23

Abstract: TYN604 BTW66-400 SCR tyn612 TYN816 TYN058 TYN656 TYN658 TN2540-600G tyn610
Contextual Info: SCR & TRIAC fZT SGS-THOMSON ^ 7/ SCRs [ID fflm itM M D C g l SOT23 SOT 223 DPAK D2PAK SURFACE MOUNT SCRs Tj max = 1 25 °C except TS820-xxxB and TS420-xxxB : 110 °C It (rm s ) Ta (A ) (1) Tl (2) Tc (3) Ttab (4) (°C) P0102xL P0109xL 0,2 P0102xN X0202xN

mss60.341

Abstract: n10 diode N092 SCHOTTKY DIODE BRIDGE mss60 Diode DR 25 PCR46 dr 25 diode MSS25 MSS40
Contextual Info: Spice Models for Metelics Schottky Diodes 1 of 6 The standard diode model found in Spice Ver 2 does not correctly model the reverse bias characteristics of Metelics’ Schottky diodes. To correct this problem, use the macromodel shown below. DR Anode Cathode