MN101EF52A
Abstract: MN101E52 sbi4.2 f-00109342f UBGA036-P-0404AE TQFP032-P-0707A
Contextual Info: MN101E52 Series MN101EF52A Type FLASH Internal ROM type ROM byte 32K RAM (byte) 1K Package (Lead-free) Minimum Instruction Execution Time TQFP032-P-0707A (Under development), UBGA036-P-0404AE (Under development) 50 ns (2.7 V to 5.5 V) 125 ns (1.8 V to 5.5 V)
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Contextual Info: MN101E52 Series MN101EF52A Type FLASH Internal ROM type ROM byte 32K RAM (byte) 1K Package (Lead-free) Minimum Instruction Execution Time SSOP032-P-0300B (Under development) 50 ns (2.7 V to 5.5 V) 125 ns (1.8 V to 5.5 V) *: at internal 2 , 3 , 4 , 5 , 6 , 8 , 10 times oscillation used
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MN101EF52A
Abstract: MN101E52
Contextual Info: MN101E52 Series MN101EF52A Type FLASH Internal ROM type ROM byte 32K RAM (byte) 1K Package (Lead-free) Minimum Instruction Execution Time SSOP032-P-0300B (Under development) 50 ns (2.7 V to 5.5 V) 125 ns (1.8 V to 5.5 V) *: at internal 2 , 3 , 4 , 5 , 6 , 8 , 10 times oscillation used
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MN101EF52A
Abstract: TQFP032-P-0707A MN101E52 UBGA036-P-0404AE MN101EF52
Contextual Info: MN101E52 Series MN101EF52A Type FLASH Internal ROM type ROM byte 32K RAM (byte) 1K Package (Lead-free) Minimum Instruction Execution Time TQFP032-P-0707A, UBGA036-P-0404AE 50 ns (2.7 V to 5.5 V) 125 ns (1.8 V to 5.5 V) *: at internal 2 , 3 , 4 , 5 , 6 , 8 , 10 times oscillation used
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MN103SH
Abstract: MN101E31 MN101EF16K MN101EF57G MN103SFE4K MN101EF31G MN103SfC2d MN103SFa5K MN103S MN101C54
Contextual Info: Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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