MMBTA56 Search Results

MMBTA55

Abstract: MMBTA56
Contextual Info: Transistors IC SMD Type Driver Transistors MMBTA55,MMBTA56 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 SOT-23 package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

MMBTA06

Contextual Info: MMBTA06 0.5A , 80V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    SOT-23 High Voltage Application Telephone Application Complementary to MMBTA56 A

MMBTA05

Abstract: MMBTA06 MMBTA55 MMBTA56
Contextual Info: MMBTA55 . MMBTA56 MMBTA55 . MMBTA56 General Purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-08-09 Power dissipation – Verlustleistung 2.9 1.1 ±0.1 0.4 Plastic case Kunststoffgehäuse

marking 2GM

Abstract: 2GM transistor marking M29 MMBTA56LT1 M292 2GM j MMBTA55 MMBTA55LT1 MMBTA56
Contextual Info: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80

1gm transistor

Abstract: 1GM sot-23 transistor marking code 1GM 1GM j MMBTA06 MMBTA56 MPSA06
Contextual Info: MMBTA06 Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. SOT-23 3.Collector • As complementary type, the PNP tranistor MMBTA56 is

Contextual Info: MCC MMBTA55 THRU MMBTA56
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • This device is designed for general purpose amplifier applications at collector current to 300mA

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR PNP SOT–23 FEATURES  General Purpose Amplifier Applications MARKING: 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: MMBTA56W, MMBTA56W Driver Transistor PNP Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: http://onsemi.com Human Body Model − 4 kV Machine Model − 400 V S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and

Contextual Info: SEMICONDUCTOR TECHNICAL DATA MMBTA06 EPITAXIAL PLANAR NPN TRANSISTOR DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. FEATURES • Complementary to MMBTA56. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT Collector-Base Voltage VC B O 80

Contextual Info: MMBTA55 THRU MMBTA56 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • This device is designed for general purpose amplifier applications at collector current to 300mA Marking Code: MMBTA55=2H MMBTA56=2GM

Amplifier transistor

Contextual Info: UTC MMBTA06/56 AMPLIFIER TRANSISTOR NPN MMBTA06 PNP MMBTA56 FEATURES *Collector-Emitter Voltage: VCEO=80V *Collector Dissipation: PD=350mW 3 1 MARKING MMBTA06 MMBTA56 2 2G 1G SOT-23 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS TA=25°C PARAMETER

MPSA56

Abstract: BEL 188 pnp TRANSISTOR characteristics CBVK741B019 F63TNR MMBTA56 PN2222N PZTA56
Contextual Info: MPSA56/MMBTA56/PZTA56 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 73 Absolute Maximum Ratings* TA = 25°C unless otherwise specified. Parameter

Contextual Info: MMBTA55, MMBTA56 PNP Silicon Elektronische Bauelemente Driver Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 SOT-23 3 A 1 L 2 3 C OLLE C TOR 3 B S Top View 1 V 2 G 1 B AS E C 2 E MIT T E R D H K J Dim Min Max A 2.800

MMBTA56

Abstract: MPSA56 PZTA56
Contextual Info: MPSA56 MMBTA561PZTA56 & D iscrete POW ER & S ig n a l Technologies National Semiconductor" MPSA56 PZTA56 MMBTA56 ♦ S O T -2 2 3 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.

Contextual Info: MCC TM Micro Commercial Components MMBTA05 THRU MMBTA06
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA55/MMBTA56

Contextual Info: MCC TM Micro Commercial Components MMBTA05 THRU MMBTA06
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • Epitaxial Planar Die Construction Complementary PNP Types Available MMBTA55/MMBTA56

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

1gm transistor

Abstract: 1GM sot-23 transistor
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES  For Switching and Amplifier Applications  Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: MMBTA56WT1 Driver Transistor PNP Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model − 4 kV ESD Rating: Machine Model − 400 V http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −80 Vdc

MMBTA56LT1

Abstract: marking code 2GM SOT 23
Contextual Info: MMBTA55LT1, MMBTA56LT1 MMBTA56LT1 is a Preferred Device Driver Transistors PNP Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBTA55 MMBTA56 Collector −Base Voltage

Contextual Info: Driver Transistors PNP Silicon MMBTA55LT1 MMBTA56LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value MMBTA55 MMBTA56 Collector–Emitter Voltage V CEO –60 –80 Vdc Collector–Base Voltage V CBO –60 –80 Vdc Emitter–Base Voltage

MMBTA55

Abstract: MMBTA55 MMBTA56 2gm transistor 6 MMBTA56 2gm transistor 2GM H transistor 2GM sot-23 transistor
Contextual Info: MMBTA55 / MMBTA56 PNP Silicon Elektronische Bauelemente Driver Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 SOT-23 3 A 1 L 2 3 C OLLE C TOR 3 B S Top View 1 V 2 G 1 B AS E C 2 E MIT T E R D H K J Dim Min Max A 2.800

Contextual Info: MMBTA05-AU,MMBTA06-AU,MMBTA55-AU,MMBTA56-AU NPN AND PNP HIGH VOLTAGE TRANSISTOR VOLTAGE 60~80 Volts POWER SOT-23 225 mWatts Unit：inch mm FEATURES • NPN and PNP silicon, planar design 0.120(3.04) 0.110(2.80) • Collector current I C = 500mA • Acqire quality system certificate : TS16949

1GM sot-23 transistor

Abstract: UCT 122
Contextual Info: MMBTA06 Small Signal Transistors NPN uct New Features d o r P • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP tranistor MMBTA56 is recommended. • This transistor is also available in the TO-92 case