MMBT9014 Search Results

mmbt9014

Abstract: MMBT9015C MMBT9015 MMBT9015B
Contextual Info: MMBT9015 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications As complementary types the NPN transistor MMBT9014 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage

mmbt9014

Abstract: MMBT9014C MMBT9014B MMBT9014D MMBT9015
Contextual Info: MMBT9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage

MMBT9015B

Abstract: MMBT9015C
Contextual Info: MMBT9015BLT1 / MMBT9015CLT1 / MMBT9015DLT1 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014BLT1, MMBT9014CLT1 and MMBT9014DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 oC

MMBT9015C

Abstract: MMBT9014B MMBT9014C MMBT9014D MMBT9015B
Contextual Info: MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC

Contextual Info: UTC MMBT9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 2 1 MARKING 3 15 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

a3020

Abstract: MMBT9014LT1 MMBT9014LT
Contextual Info: MMBT9014LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 PRF-AMPLIFIER,LOW LEVEL&LOW NOISE 1 Complemen to MMPT9015LT1 Collector-current:Ic=100mA Collector-Emiller Voltage:V CE =45V High Totalpower Dissipation Pc=225mW High life And Good Linearity 2 1. 1.BASE

MMBT9015

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE  3 FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 2 1 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION

UTC 225

Abstract: MMBT9015 mmbt9014
Contextual Info: UTC MMBT9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 2 1 MARKING 3 15 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

Contextual Info: UNISONICTECHNOLOGIESCO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AM PLI FI ER, LOW LEV EL & LOW N OI SE ̈ FEAT U RES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC MMBT9014 ̈ ORDERI N G I N FORM AT I ON Ordering Number

mmbt9014

Abstract: MMBT9015
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 „ „ ORDERING INFORMATION Ordering Number Package

mmbt9014

Abstract: MMBT9014G MMBT9015
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC MMBT9015 Lead-free: MMBT9014L Halogen-free:MMBT9014G „