MMBT5551G Search Results

MMBT5551G Datasheets (1)

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Zowie Technology

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MMBT5551-G1		Zowie Technology	High Voltage Transistor NPN silicon	Original	PDF	86.48KB	4

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Comchip Technology Corporation Ltd MMBT5551-G RF Bipolar Transistors VCEO=160V IC=600mA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	MMBT5551-G		2,487			1 $0.39 10 $0.27 100 $0.17 1000 $0.09 10000 $0.06	Buy Now
United Technologies Corporation MMBT5551G-B-AE3-R NPN Silicon Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	MMBT5551G-B-AE3-R		10,000			1 - 10 - 100 - 1000 - 10000 $0.01	Buy Now

MMBT5551G Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MMBT5551L Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain Lead-free: MMBT5551L Halogen-free: MMBT5551G ORDERING INFORMATION Normal MMBT5551-x-AE3-R	Original	mmbt5551 mmbt5551l mmbt5551g mmbt5551-x-ae3-r +4mmbt5551l-x-ae3-r mmbt5551g-x-ae3-r ot-23 qw-r206-010	PDF
Contextual Info: Zowie Technology Corporation High Voltage Transistors Lead free product Halogen-free type FEATURE ƽ We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR 3 MMBT5550GH MMBT5551GH 1 1 BASE 2 2 SOT-23 EMITTER MAXIMUM RATINGS	Original	mmbt5550gh mmbt5551gh ot-23	PDF
MMBT5551 Abstract: MMBT5551L Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain Lead-free: MMBT5551L Halogen-free: MMBT5551G ORDERING INFORMATION Normal MMBT5551-x-AE3-R	Original	mmbt5551 mmbt5551l mmbt5551g mmbt5551-x-ae3-r +4mmbt5551l-x-ae3-r mmbt5551g-x-ae3-r ot-23 qw-r206-010	PDF
1N914 Abstract: mmbt5550 MMBT5551-G MMBT5550-G Contextual Info: Zowie Technology Corporation High Voltage Transistors Lead free product FEATURE ƽ We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR 3 MMBT5550G MMBT5551G 1 1 BASE 2 2 SOT-23 EMITTER MAXIMUM RATINGS Rating Symbol Value	Original	mmbt5550g mmbt5551g ot-23 1n914 +3mmbt5550 mmbt5551-g mmbt5550-g	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.	Original	mmbt5551 mmbt5551l-x-ae3-r mmbt5551g-x-ae3-r ot-23 +1qw-r206-010	PDF
Contextual Info: General Purpose Transistor MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) 0.047(1.20)	Original	mmbt5401-g ot-23 mmbt5551-g qw-btr18	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.	Original	mmbt5551 mmbt5551l-x-ae3-r mmbt5551g-x-ae3-r ot-23 +2mmbt5551-x-ae3-r qw-r206-010	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed.	Original	mmbt5551 ot-23 o-236 mmbt5551g-x-ae3-r +1qw-r206-010	PDF
2L smd transistor Abstract: 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l Contextual Info: COMCHIP General Purpose Transistor SMD Diodes Specialist MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80)	Original	mmbt5401-g ot-23 mmbt5551-g qw-btr18 +92l smd transistor 2l transistor smd marking code transistor smd marking code 2l transistor smd marking 2l smd transistor 2l smd marking code 2l transistor smd marking code pd smd code 2l transistor smd 2l	PDF
MMBT5401-G Contextual Info: General Purpose Transistor MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) 0.047(1.20)	Original	mmbt5401-g ot-23 mmbt5551-g qw-btr18	PDF