MMBT5401G Search Results
MMBT5401G Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MMBT5401-G | Comchip Technology | Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP 150V 0.6A SOT-23 | Original | 4 |
MMBT5401G Price and Stock
Comchip Technology Corporation Ltd MMBT5401-GTrans GP BJT PNP 150V 0.6A 300mW 3-Pin SOT-23 T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT5401-G | 6,000 | 3,000 |
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MMBT5401-G | 5,394 |
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MMBT5401-G | 2,600 | 1 |
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MMBT5401-G | 2,080 |
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MMBT5401-G | 6,000 |
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Get Quote | |||||||
Others MMBT5401-G |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMBT5401-G | 6,000 |
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Get Quote | |||||||
MMBT5401G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
MMBT5401-G
Abstract: 1N914
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mmbt5401ghot-23mmbt5401-g1n914 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MMBT5401L-x-AE3-R MMBT5401G-x-AE3-R |
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mmbt5401-150vmmbt5401l-x-ae3-rmmbt5401g-x-ae3-r+2 | |
MMBT5401
Abstract: MMBT5401L mmbt5401-g IC ax 2008
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mmbt5401-150vmmbt5401lmmbt5401g+7 | |
MMBT5401
Abstract: MMBT5401L
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mmbt5401-150vmmbt5401lmmbt5401g+5 | |
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Contextual Info: Zowie Technology Corporation High Voltage Transistor Lead free product Halogen-free type FEATURE MMBT5401GH ƽ We declare that the material of product compliance with RoHS requirements. 3 1 2 SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit V CBO V EBO – 150 |
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mmbt5401ghot-23 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain ORDERING INFORMATION Ordering Number Note: MMBT5401G-x-AE3-R Pin Assignment: E: Emitter |
Original |
mmbt5401-150vmmbt5401g-x-ae3-rot-23+1 | |
mmbt5401-g
Abstract: 011 B SOT23
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Original |
mmbt5401-150vmmbt5401l-x-ae3-rmmbt5401g-x-ae3-r+4 | |
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Contextual Info: General Purpose Transistor MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) 0.047(1.20) |
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mmbt5401-got-23mmbt5551-gqw-btr18 | |
2L smd transistor
Abstract: 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l
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Original |
mmbt5401-got-23mmbt5551-gqw-btr18+9 | |
MMBT5401-GContextual Info: General Purpose Transistor MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) 0.047(1.20) |
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mmbt5401-got-23mmbt5551-gqw-btr18 |