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    MMBT5401G Search Results

    MMBT5401G Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MMBT5401-G
    Comchip Technology Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR PNP 150V 0.6A SOT-23 Original PDF 4
    badge MMBT5401-G(RANGE:200-300)
    JCET Group MMBT5401 PNP transistor in SOT-23 package, with -150 V collector-emitter voltage, -0.6 A collector current, 0.3 W power dissipation, and DC current gain up to 300, suited for medium power amplification and switching applications. Original PDF
    SF Impression Pixel

    MMBT5401G Price and Stock

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    Comchip Technology Corporation Ltd MMBT5401-G

    TRANS PNP 150V 0.6A SOT-23-3
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    DigiKey () MMBT5401-G Digi-Reel 10,648 1
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    MMBT5401-G Cut Tape 10,648 1
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    MMBT5401-G Reel 9,000 3,000
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    Mouser Electronics MMBT5401-G 5,892
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    Verical MMBT5401-G 9,000 3,000
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    Bristol Electronics MMBT5401-G 2,600 45
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    Quest Components MMBT5401-G 2,080
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    Karl Kruse GmbH & Co KG MMBT5401-G 9,000
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    Chip 1 Exchange MMBT5401-G 9,000
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    Others MMBT5401-G

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    PUI MMBT5401-G 9,000
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    MMBT5401G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MMBT5401-G

    Abstract: 1N914
    Contextual Info: Zowie Technology Corporation High Voltage Transistor Lead free product Halogen-free type FEATURE MMBT5401GH ƽ We declare that the material of product compliance with RoHS requirements. 3 1 2 SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit V CBO V EBO – 150


    Original
    MMBT5401GH OT-23 MMBT5401-G 1N914 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain „ ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MMBT5401L-x-AE3-R MMBT5401G-x-AE3-R


    Original
    MMBT5401 -150V MMBT5401L-x-AE3-R MMBT5401G-x-AE3-R OT-23 QW-R206-011 PDF

    MMBT5401

    Abstract: MMBT5401L mmbt5401-g IC ax 2008
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain Lead-free: MMBT5401L Halogen-free: MMBT5401G „ ORDERING INFORMATION Normal MMBT5401-x-AE3-R


    Original
    MMBT5401 -150V MMBT5401L MMBT5401G MMBT5401-x-AE3-R MMBT5401L-x-AE3-R MMBT5401G-x-AE3-R OT-23 QW-R206-011 MMBT5401 MMBT5401L mmbt5401-g IC ax 2008 PDF

    MMBT5401

    Abstract: MMBT5401L
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain Lead-free: MMBT5401L Halogen-free: MMBT5401G „ ORDERING INFORMATION Normal MMBT5401-x-AE3-R


    Original
    MMBT5401 -150V MMBT5401L MMBT5401G MMBT5401-x-AE3-R MMBT5401L-x-AE3-R MMBT5401G-x-AE3-R OT-23 QW-R206-011 MMBT5401 MMBT5401L PDF

    Contextual Info: Zowie Technology Corporation High Voltage Transistor Lead free product Halogen-free type FEATURE MMBT5401GH ƽ We declare that the material of product compliance with RoHS requirements. 3 1 2 SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit V CBO V EBO – 150


    Original
    MMBT5401GH OT-23 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain  ORDERING INFORMATION Ordering Number Note:  MMBT5401G-x-AE3-R Pin Assignment: E: Emitter


    Original
    MMBT5401 -150V MMBT5401G-x-AE3-R OT-23 QW-R206-011 PDF

    mmbt5401-g

    Abstract: 011 B SOT23
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5401 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR „ FEATURES *Collector-Emitter Voltage: VCEO=-150V *High Current Gain „ ORDERING INFORMATION Ordering Number Lead Free Halogen-Free MMBT5401L-x-AE3-R MMBT5401G-x-AE3-R


    Original
    MMBT5401 -150V MMBT5401L-x-AE3-R MMBT5401G-x-AE3-R OT-23 QW-R206-011 mmbt5401-g 011 B SOT23 PDF

    Contextual Info: General Purpose Transistor MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) 0.047(1.20)


    Original
    MMBT5401-G OT-23 MMBT5551-G) QW-BTR18 PDF

    2L smd transistor

    Abstract: 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l
    Contextual Info: COMCHIP General Purpose Transistor SMD Diodes Specialist MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80)


    Original
    MMBT5401-G OT-23 MMBT5551-G) QW-BTR18 2L smd transistor 2l TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 2l TRANSISTOR SMD MARKING 2l smd transistor 2l MMBT5401-G SMD MARKING CODE 2L TRANSISTOR SMD MARKING CODE PD smd code 2l transistor smd 2l PDF

    MMBT5401-G

    Contextual Info: General Purpose Transistor MMBT5401-G PNP RoHS Device Features SOT-23 -Epitaxial planar die construction. -Complementary NPN type available (MMBT5551-G). -Ideal for medium power amplification and switching. 0.119(3.00) 0.110(2.80) 3 0.056(1.40) 0.047(1.20)


    Original
    MMBT5401-G OT-23 MMBT5551-G) QW-BTR18 MMBT5401-G PDF