MMBT3904W Search Results

1N916

Abstract: MMBT3904WG
Contextual Info: Zowie Technology Corporation General Purpose Transistor NPN Silicon Lead free product COLLECTOR 3 3 MMBT3904WG BASE 1 1 2 2 EMITTER SOT-323 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage

MMBT3904WH

Abstract: 1N916 MMBT3904W
Contextual Info: MMBT3904W General Purpose Transistor NPN Silicon COLLECTOR 3 3 1 BASE 1 2 2 EMITTER SOT-323 SC-70 Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics

Contextual Info: MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA 0.087(2.20) 0.070(1.80)

BT3904W

Contextual Info: MOTOROLA Order this document MMBT3904WT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose TVansistors NPN M M BT3904W T1 PNP MMBT3906W T1 NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the S O T -3 2 3 /S C -7 0 which is designed for low power surface mount

Contextual Info: MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications.

1N916

Abstract: MMBT3904WT1 MMBT3904WT1G MMBT3906WT1 MMBT3906WT1G
Contextual Info: MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications.

Contextual Info: Zowie Technology Corporation General Purpose Transistor NPN Silicon Lead free product Halogen-free type COLLECTOR 3 3 MMBT3904WGH BASE 1 1 2 2 EMITTER SOT-323 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO

TRANSISTOR SE 135

Abstract: 1N916 MMBT3904W
Contextual Info: DATA SHEET MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 150 mWatts SOT-323 Unit: inch mm FEATURES • Collector-emitter voltage VCE = 40V .087(2.2) .070(1.8) • Collector current IC = 200mA • Both normal and Pb free product are available :

1N916

Abstract: MMBT3904W c 2026 y transistor
Contextual Info: MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts FEATURES • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V • Collector current I C = 200mA • In compliance with EU RoHS 2002/95/EC directives

Contextual Info: ON Semiconductort PNP General Purpose Transistors MMBT3904WT1 NPN and PNP Silicon NPN MMBT3906WT1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

1N916

Abstract: MMBT3904WT1 MMBT3906WT1
Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN MMBT3904WT1 PNP MMBT3906WT1 NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

U275

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MMBT3904W T1 PNP MMBT3906W T1 General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT-323/SC-7Û which is designed for low power surface mount

MMBT3904WT1G

Abstract: 1N916 MMBT3904WT1 MMBT3906WT1 MMBT3906WT1G
Contextual Info: MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications.

SMMBT3904WT1

Contextual Info: MMBT3904WT1, NPN, MMBT3904WT1, NPN, MMBT3906WT1, PNP General Purpose Transistors http://onsemi.com NPN and PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which

Contextual Info: MMBT3904W NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • NPN epitaxial silicon, planar design • Collector-emitter voltage V CE = 40V 0.087(2.20) 0.070(1.80) • Collector current I C = 200mA

MBT3904WT1

Contextual Info: NPN MMBT3904WT1 FM120-M+ THRU PNP FM1200-M+ 1.0AGeneral SURFACE MOUNT SCHOTTKYTransistors BARRIER RECTIFIERS -20V- 200V MMBT3906WT1 Purpose WILLAS Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

1N916

Abstract: MMBT3904WT1 MMBT3906WT1
Contextual Info: ON Semiconductort NPN MMBT3904WT1 PNP MMBT3906WT1 General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.

MMBT3904WT1G

Abstract: 1N916 MMBT3904WT1 MMBT3906WT1 MMBT3906WT1G
Contextual Info: MMBT3904WT1, NPN MMBT3906WT1, PNP General Purpose Transistors NPN and PNP Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which is designed for low power surface mount applications.

MMBT3904W

Abstract: 1N916 MMBT3906W K2N 80
Contextual Info: MMBT3904W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-323 SC-70 • · Epitaxial Planar Die Construction · Ideal for Medium Power Amplification and Switching

Contextual Info: Product specification MMBT3904W Features Pb?Free package is available. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-emitter voltage Parameter VCEO 40 V Collector-base voltage VCBO 60 V Emitter-base voltage VEBO

Contextual Info: MMBT3904W General Purpose Transistor NPN Silicon COLLECTOR 3 3 1 BASE * “G” Lead Pb -Free 1 2 2 EMITTER SOT-323(SC-70) Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO

Contextual Info: MMBT3904WT1, NPN, MMBT3904WT1, NPN, MMBT3906WT1, PNP General Purpose Transistors http://onsemi.com NPN and PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which

Contextual Info: MMBT3904W NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-323 SC-70 • · Epitaxial Planar Die Construction · Ideal for Medium Power Amplification and Switching

Contextual Info: ON Semiconductort PNP General Purpose Transistors MMBT3904WT1 NPN and PNP Silicon NPN MMBT3906WT1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.