MIP515 Search Results

Contextual Info: Intelligent Power Devices IPDs MIP515 Silicon MOSFET type Integrated Circuit Unit: mm 5.0±0.2 • Features 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 8.0±0.2 • Built-in five protection functions (over-current, over-voltage, loadshort-circuit, over heat, ESD)

MIP16

Abstract: MIP515 MIP9E MIP02 mip3
Contextual Info: Intelligent Power Devices IPDs MIP515 Silicon MOSFET type Integrated Circuit Unit: mm 5.0±0.2 • Features 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 8.0±0.2 • Built-in five protection functions (over-current, over-voltage, loadshort-circuit, over heat, ESD)

MIP515

Contextual Info: Intelligent Power Devices IPDs MIP515 Silicon MOSFET type Integrated Circuit Unit: mm 5.0±0.2 • Features 4.0±0.2 8.0±0.2 • Built-in five protection functions (over-current, over-voltage, loadshort-circuit, over heat, ESD) • Both DC and AC power suply are available

"Intelligent Power Device"

Abstract: "Solenoid Driver" transistor MIP504 MIP504 MIP508 MIP510 MIP511 MIP512 MIP513 MIP514
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • IPD Intelligent Power Device Application EL Driver Application Part No. Output MOS FET Drive Voltage VCC (V) VDSS (V) ID (mA) Oscillating Frequency fOSC (kHz) 2.5 to 3.5 100 20/70 120 MIP805 Input Voltage VIN (V) Output Breakdown Voltage

MIP2E3DMY

Abstract: MIP2E3D mosfet mar 709 MIP2E3 mip2e mip2 MIP806 MIP16 mip* 282 mip2e3dmy equivalent
Contextual Info: インテリジェントパワーデバイス IPD MIP2E3DMY シリコンMOS形集積回路 • 特 長 Unit : mm 2.8±0.2 1.5±0.2 15.4±0.3 φ 3.7±0.2 ■ 絶対最大定格 Ta = 25°C ± 3°C 1.4±0.1 定格 単位 ドレイン電圧 VD 700 V コントロール電圧