MGF0843G Search Results

Contextual Info: PRELIMINARY < High-power GaN HEMT small signal gain stage > MGF0843G L to C BAND / 20W non - matched DESCRIPTION OUTLINE DRAWING The MGF0843G, GaN HEMT with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications. Unit : m illim eters FEATURES

Contextual Info: Mitsubishi Semiconductors < GaN HEMT > MGF0843G 20 W GaN HEMT [ non-matched ] DESCRIPTION The MGF0843G, GaN HEMT with an N-channel schottky Gate, is designed for MMDS/UMTS/WiMAX applications. OUTLINE DRAWING Unit : m illim eters FEATURES • High voltage operation : VDS = 47 V

Contextual Info: PRELIMINARY < High-power GaN HEMT small signal gain stage > MGF0843G L to C BAND / 20W non - matched DESCRIPTION OUTLINE DRAWING The MGF0843G, GaN HEMT with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications. Unit : m illim eters FEATURES

Contextual Info: PRELIMINARY < High-power GaN HEMT small signal gain stage > MGF0843G L to C BAND / 20W non - matched DESCRIPTION OUTLINE DRAWING The MGF0843G, GaN HEMT with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications. Unit : m illim eters FEATURES

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed