MFE211 Search Results

Contextual Info: DIGITRON SEMICONDUCTORS MFE211 – MFE212 N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSX 20 Vdc Drain Gate Voltage VDG1 VDG2 35 35 Vdc Gate Current IG1 IG2 ±10

MFE211

Abstract: mfe212 3la5
Contextual Info: M O T Q R C L A SC XSTRS/R F 1 5 E 0 | b3 b 7 2 5 4 QQfiL73fi t I N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS MFE211 r-3i-Ä£r ' MFE212 . . . high Y fs depletion m ode dual gate transistors designed for VHF am plifier and m ixer applications.

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and