MI33T
Abstract: MIB33T
Contextual Info: CRO MI33T MIB33T INFRARED EMITTING DIODE DESCRIPTION MI33T & MIB33T are GaAs infrared emitting diode molded in a flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB33T with cup type leadframe. MI33T & MIB33T are mechanically and spectrally matched to the MEL81N series photo transistor.
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mi33tmib33tmel81n100ma+110/xs
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MI33T
Abstract: MIB33T em micro
Contextual Info: CRO MI33T MIB33T INFRARED EMITTING DIODE DESCRIPTION MI33T & MIB33T are GaAs infrared emitting diode molded in a flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB33T with cup type leadframe. MI33T & MIB33T are mechanically and spectrally matched to the MEL81N series photo transistor.
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mi33tmib33tmel81n10/xs+2100maem micro
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MI33T
Abstract: MIB33T
Contextual Info: MI33T MIB33T INFRARED EMITTING DIODE DESCRIPTION MI33T & MIB33T are GaAs infrared emitting diode molded in a flangeless 3mm diameter clear plastic • package, with the lensing effect of the package, and MIB33T with cup type leadframe. MI33T & MIB33T are mechanically and spectrally matched to the MEL81N series photo transistor.
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mi33tmib33tmel81n100ma+110/xs
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HEL81
Contextual Info: MICRO E L E C T R O N I C S LT» 41E D □ fccm7flfl GOQO^ñb fi □ flEHK Y W /-Í, I MEL81 NPN SILICON PHOTO-TRANSI8T0R HEL81 is NPN silicon planar photo-transistor. It features ultra high illuaination sensitivity, fast response tiae, and spectrally Matched with
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mel81hel81mic31th20au/ca2+1rl-100q
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diode lt 341
Abstract: MICRO ELECTRONICS ltd transistor
Contextual Info: MICRO ELEC TRONICS LT» MIE D bOWûfl aüO[H7ô ñ C 3 MEHK MIC31TH INFRARED EMITTING DIODE MIC31TH is a GaAlAs infrared emitting diode molded in clear 3mm 0 package. With the lensing effect of the package, it has an narrow radiation angle measured from the optical axis to the half power
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mic31thmel811/16hdiode lt 341+1micro electronics ltd transistor
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2N1051
Abstract: 2w105 2w1051 D 1414 transistor
Contextual Info: M IL -S-19-.00/216A NAVY 28 April 1969 SUPERSED IN G M IL -S-19500/216(NAVY) 9 N o v e m b e r 1 *3 1 M ILIT A R Y SPEC IFIC A TIO N SEMICONDUCTOR D EV IC E. TRANSISTOR, NPN, SILIC G n T Y PE 2N1051 « AAAflB 1* o w v n 1.1 Scope. This specification covers the detail requirem ents lo r silicon,
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-19100/216a2n1051mil-std-750mdl-s-19500+5mil-8-195005961-h179j2w1052w1051d 1414 transistor
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