MEI10RY Search Results

mcm511000aj70

Abstract: MCM511000AP70 MCM511000 MCM511000AP80 MCM511000A MCM511000A-70 MCM51L1000A MCM511000AJ80 MCM511 MCM511000AZ80
Contextual Info: MOTOROLA SC MEI10RY/ASIC SflE D fc>3b7251 IM0T3 r □ Ü f l 7 7 c14 1 T 3 riim a m Order thist rtA documemby MCM511000A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM511000A MCM51L1000A 1M x 1 CMOS Dynamic RAM Page Mode, Commercial and Industrial Temperature Range

Contextual Info: TE X A S IN ST R -CASIC/MEMORY} ^77 i>Ë| 6 ^ 1 7 2 5 D040774 77C 4 0 7 7 4 -§361725 TEXAS 1NSTR ASIC/MEMORY D TM4256EL9, TM4256GU9. TM4257EL9, TM4257GU9 262,144 BY 9-BIT DYNAMIC RAM MODULES SEPTEMBER 1986 - REVISED NOVEMBER 1985 T M 4 2 B .E L9 . . . L SINGLE-IN-UNE PACKAGE

m5m27c100

Abstract: M5M27C100P
Contextual Info: b lE D bSMTflES 0 0 1 1 0 1 4 4S3 ♦ IMITI MITSUBISHI LSIs M5M27C100P, FP, J, VP, RV 1 0 4 8 5 7 6 -B IT 1 3 1 0 7 2 - WORD B Y 8-BIT CMOS ONE TIM E PROGRAMMABLE ROM MITSUBISHI (M E M O R Y / A S I C ) DESCRIPTION The Mitsubishi M5M27C100P, FP, J , VP, RV are high-speed

ulw diode

Contextual Info: TEXAS INSTR -CASIC/MEUORYJ ?7 dË | 8961725 TEXAS INSTR <ASIC/MEMORY 0 ^ 1 7 5 5 00M0fl71 77C 40871 D TM4416KU8 16,384 BY 8-BIT DYNAMIC RAM MODULE ADVANCE INFORMATION SEPTEMBER 1985 - REVISED NOVEMBER 1985 U SINGLE-M-UNE PACKAGE TOP VIEW ) 16,384 X 8 Organization

Contextual Info: 6^1725 SN54ALS229A, SN74ALS229A 1 6 X 5 ASYNCHRONOUS FIRST-IN FIRST-OUT MEMORIES TEXAS INSTR A S I C / flEM0 R Y 2SE D SN54ALS229A . . . J PACKAGE SN74ALS229A . . . DW OR N PACKAGE muapenae.ni Asychronous Inputs and Outputs I D2876 , MARCH 1986 —REVISED MAY 1986

27C512JL

Abstract: 1985-REVISED TMS27C512 27pc512 Texas Instruments TTL 1985 TMS27PC512 -12nt 512K x 8 High Performance CMOS EPROM TMS27PC512 lt 637 CODE ZA10
Contextual Info: TMS27C512 524 288-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC512 524 288-BIT PROGRAMMABLE READ-ONLY MEMORY • T II5 S M LS 512E-N O VE M B ER 19 8 5 -R E V IS E D DECEM BER 1992 This Data Sheet is Applicable to All TMS27C512S and TMS27PC512s Symbolized with Code “B" as Described

27C510

Abstract: pc51020 27C510-12 27C510-15 PC510-20 LA5524 memory device programers
Contextual Info: SMLS510A-AUGUST1990-REVISED JANUARY 1993 J AND N PACKAGESÎ {TOP VIEW Organization . . . 64K x 8 Single 5-V Power Supply 30 ] NC A 12[ 4 29 ] A14 A 7[ 5 28 ] A13 A 6f 6 27 ] A 8 A 5f 7 26 ] A9 A 4[ 8 25 ] A11 A 3f 9 A 2[ 10 24 ] G A 1 [ 11 AOf 12 22 ] È

E415

Abstract: 266K b236 tms4256fml
Contextual Info: T E X A S IN ST R Ì A S I C / M E M O R Y > 77 flìblTHS OOMDfib? -ggg^T^S- TEXAS TNSTR T Â S TCTMÊMORVT ADVANCE INFORMATION 77C 4 0867 D TM4256HE4 524,288 BY 4BIT DYNAMIC RAM MODULE SEPTEMBER 1986 - REVISED NOVEMBER 1986- E SINGLE-IN-UNE P A C K A G E *

61C64

Contextual Info: TEXAS INSTR {A SI C/M EMORY} 2SE » • 0^1725 G07ÛQQT b ■ MPR61C64, MPR61CT64 65,536-WORD BY 1-BIT RADIATION-HARDENED STATIC RAMs D 3 3 6 4 , NOVEMBER 1 9 8 9 24-PIN PACKAGE 6 5 ,5 3 6 x 1 Organization • Silicon-on-lnsulator SIMOX for Extreme Radiation Environments:

27C512-25

Abstract: SMJ27C512 eprom 27C512 27C512-20 27C512-30
Contextual Info: • iL.SE bdL D ■ Tl x a s fl^blTES DDÖIETS 3 ö l I■ T I I 5 SMJ27C512 524 288-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY I NSTR ASIC/MEMORY ■ I * Military Operating Temperature Range . . . - 55°C to 125°C 1 * Processed to MIL-STD-883C, Class B

27C040-12

Abstract: 27C040-10 27c040-15 SMJ27C040
Contextual Info: b2 E T> • ö lb lT aS TEXAS INSTR SMJ27C040 4 194 304-BIT UV ERASABLE CASI C/ MEMORY Ì PROGRAMMABLE READ-ONLY MEMORY GD613D? *1B3 I■ T I I S S G M S 0 4 6-N O V E M B E R 1992 J PACKAGEt Military Operating Temperature Range —55°C to 125°C TOP VIEW

TM497BBK32S

Abstract: TM893CBK32 TM893CBK32S TM497BBK32 128m simm 72 pin K3270
Contextual Info: bZE D • f l ^ b l 7 2 S □DfiDâk.3 LE? B T I I S TM497BBK32, TM497BBK32S 4194 304 BY 32-BIT DYNAMIC RAM MODULE TM893CBK32, TM893CBK32S 8 388 608 BY 32-BIT DYNAMIC RAM MODULE INSTR ASIC/M EM O RY Organization TM497BBK32 . . . 4 194 304 x 32 TM893CBK32 . . . 8 388 608 x 32

3JDQ10

Abstract: mitsubishi A
Contextual Info: bl E D bSM'iflSS QD17fi3b 5 m •MITI MITSUBISHI LSIs ‘ I t ' M5M4V181600AJ,TP,RT-6,-7,-8 FAST PAGE MODE 16777216-BIT 1048576-WORD BY 16-BIT DYNAMIC RAM MITSUBISHI (MEMORY/ASIC) PIN CONFIGURATION (TO P VIEW ) DESCRIPTION This is a fam ily o f 1048576-word by 16-bit dynam ic

mtbf intel

Abstract: 28F008SA intel PLD 29042 UG773
Contextual Info: ADVANCE INFORMATION i n U CORP MEMORY/PLD/ SbE D • 4ûEbl7b Q 07 732 2 O IT B I T L E 28F008SA-L 8 MBIT (1 MBIT x 8 FLASHFILE MEMORY High-Density Symm etrically Blocked Architecture — Sixteen 64 KByte Blocks Low-Voltage Operation — 3.3V ± 0.3V or 5.0V ± 10% V cc

Contextual Info: SN74ALS632B, SN74AS632 32 BIT PARALLEL ERROR DETECTION AND CORRECTION CIRCUITS D 3 3 9 6 , JA N U A R Y 1 9 8 6 -R E V IS E D JA N U A R Y 1 990 I • Detects and Corrects Single-Bit Errors I • Detects and Flags Dual-Bit Errors I • Built-In Diagnostic Capability

Intel 1103 DRAM

Abstract: 16bit isa pcmcia TPE TES A 210 E 82595 LSE B3 transformer how to test 8023 dram cont ic A82595 transformer PLT ISA Design PCMCIA Design
Contextual Info: INTEL CORP MEinORY/PLD/ bêE D • MflEblVb □Gfl4GlH in t e l 82595 ISA/PCM CIA HIGH INTEGRATION ETHERNET CONTROLLER Optimal Integration for Lowest Cost Solution — Glueless 8-Bit/16-Bit ISA/PCMCIA 2.0 Bus Interface — Provides Fully 802.3 Compliant AUI