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    MC-4516CD641ES, datasheet (8)

    Part ECAD Model Manufacturer Description Type PDF
    MC-4516CD641ES NEC Semiconductor Selection Guide Original PDF
    MC-4516CD641ES NEC 16M-Word BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Original PDF
    MC-4516CD641ES-A10 Elpida Memory 16M-Word BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Original PDF
    MC-4516CD641ES-A10 NEC 16M-Word BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Original PDF
    MC-4516CD641ES-A10L NEC 128M-byte(16M-word x 64-bit) SDRAM SO DIMM Original PDF
    MC-4516CD641ES-A80 Elpida Memory 16M-Word BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Original PDF
    MC-4516CD641ES-A80 NEC 16M-Word BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Original PDF
    MC-4516CD641ES-A80L NEC 128M-byte(16M-word x 64-bit) SDRAM SO DIMM Original PDF

    MC-4516CD641ES, Datasheets Context Search

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    1999 - Not Available

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516CD641ES 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 4516CD641ES is a 16,777,216 words by 64 bits synchronous dynamic , access time from CLK Part number MC- 4516CD641ES -A80 /CAS latency CL = 3 CL = 2 MC- 4516CD641ES -A10 CL = 3 , time from CLK (MAX.) 6 ns 6 ns 6 ns 7 ns 6 ns 6 ns 6 ns 7 ns 5 MC- 4516CD641ES -A80L CL = 3 CL = 2 5 MC- 4516CD641ES -A10L CL = 3 CL = 2 · Fully Synchronous Dynamic RAM, with all signals


    Original     		PDF MC-4516CD641ES 16M-WORD 64-BIT MC-4516CD641ES PD45128163 MC-4516CD641ES-A80 MC-4516CD641ES-A10 125es,
    Not Available

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516CD641ES ,4516CD641PS,4516CD641XS 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) EO Description The MC- 4516CD641ES , MC-4516CD641PS and MC , Part number Clock frequency (MAX.) Access time from CLK (MAX.) Pr MC- 4516CD641ES , -4516CD641PS-A80 125 MHz CL = 2 MC- 4516CD641ES -A10 CL = 3 77 MHz 7 ns CL = 3 125 MHz 6 ns CL , Hitachi, Ltd. MC- 4516CD641ES ,4516CD641PS,4516CD641XS • LVTTL compatible • 4,096 refresh cycles/64


    Original     		PDF MC-4516CD641ES 4516CD641PS 4516CD641XS 16M-WORD 64-BIT MC-4516CD641ES, MC-4516CD641PS MC-4516CD641XS PD45128163
    2000 - MC-4516CD641ES

    Abstract: MC-4516CD641ES-A10 MC-4516CD641ES-A80 MC-4516CD641PS MC-4516CD641PS-A80 PD45128163
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516CD641ES , 4516CD641PS 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 4516CD641ES and MC-4516CD641PS are 16,777,216 , CL = 3 100 MHz 6 ns CL = 2 77 MHz 7 ns MC- 4516CD641ES -A80 MC- 4516CD641ES , 2000 NS CP(K) Printed in Japan The mark · shows major revised points. © 1999 MC- 4516CD641ES , .) MC- 4516CD641ES -A10 125 MHz 100 MHz 144-pin Small Outline DIMM 8 pieces of µPD45128163G5


    Original     		PDF MC-4516CD641ES, 4516CD641PS 16M-WORD 64-BIT MC-4516CD641ES MC-4516CD641PS PD45128163 MC-4516CD641ES-A10 MC-4516CD641ES-A80 MC-4516CD641PS-A80
    2001 - Not Available

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516CD641ES ,4516CD641PS,4516CD641XS 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) Description The MC- 4516CD641ES , MC-4516CD641PS and MC , CL = 2 77 MHz 7 ns MC- 4516CD641ES -A80 MC- 4516CD641ES -A10 MC-4516CD641PS-A80 MC , Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. MC- 4516CD641ES , devices MHz (MAX.) MC- 4516CD641ES -A80 125 MHz 144-pin Small Outline DIMM 8 pieces of


    Original     		PDF MC-4516CD641ES 4516CD641PS 4516CD641XS 16M-WORD 64-BIT MC-4516CD641ES, MC-4516CD641PS MC-4516CD641XS PD45128163
    2001 - MC-4516CD641ES

    Abstract: MC-4516CD641ES-A10 MC-4516CD641ES-A80 MC-4516CD641PS-A10 MC-4516CD641PS-A80 MC-4516CD641XS-A10 MC-4516CD641XS-A80 DQ 21
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516CD641ES ,4516CD641PS,4516CD641XS 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM) EO Description The MC- 4516CD641ES , MC-4516CD641PS and MC , number Clock frequency (MAX.) Access time from CLK (MAX.) Pr MC- 4516CD641ES -A80 /CAS , CL = 2 MC- 4516CD641ES -A10 CL = 3 77 MHz 7 ns CL = 3 125 MHz 6 ns CL = 3 CL = , , Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd. MC- 4516CD641ES


    Original     		PDF MC-4516CD641ES 4516CD641PS 4516CD641XS 16M-WORD 64-BIT MC-4516CD641ES, MC-4516CD641PS MC-4516CD641XS PD45128163 MC-4516CD641ES-A10 MC-4516CD641ES-A80 MC-4516CD641PS-A10 MC-4516CD641PS-A80 MC-4516CD641XS-A10 MC-4516CD641XS-A80 DQ 21
    4516CD

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC- 4516CD641ES 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM , MHz 6 ns CL = 2 77 MHz 7 ns M C- 4516CD641ES -A80 M C- 4516CD641ES -A10 M C- 4516CD641ES -A80L M C- 4516CD641ES -A10L • Fully Synchronous Dynamic RAM, with all signals referenced to a positive , Information Part num ber Clock frequency Package M ounted devices MHz (MAX.) M C- 4516CD641ES -A80 125 MHz 144-pin Sm all Outline DIMM (Socket Type) M C- 4516CD641ES -A10 100 MHz Edge c o n


    OCR Scan     		PDF MC-4516CD641ES 16M-WORD 64-BIT MC-4516CD641 uPD45128163 M13348X) M14014EJ4V0DS00 144-PIN M144S-80A14 4516CD
    Not Available

    Abstract: No abstract text available
    Text: RAM MODULE (SO DIMM) Description The MC- 4516CD641ES is a 16,777,216 words by 64 bits synchronous , MHz 6 ns CL = 2 77 MHz 7 ns M C- 4516CD641ES -A80 M C- 4516CD641ES -A10 • Fully , Information Part num ber Clock frequency Package M ounted devices MHz (MAX.) M C- 4516CD641ES -A80 100 MHz 144-pin Sm all Outline DIMM 8 pieces of /¿PD45128163G5 (Rev. E) (Socket Type) M C- 4516CD641ES , [MEMO] 14 Data Sheet M14014EJ2V0DS00 NEC MC- 4516CD641ES


    OCR Scan     		PDF MC-4516CD641 16M-WORD 64-BIT MC-4516CD641ES uPD45128163
    2000 - A80L

    Abstract: PC100 4M84 2M164 upd432836 uPD432836AL 0443 IC 512k*8 sram 450 mil uPD432836L PC133-333
    Text: -4516CD64ES A10B 3 2 A10BL 3 2 MC- 4516CD641ES A80 3 2 A10 3 2 100 67 100 67 100 67 100 67 125 100 100 77 16 31.75


    Original     		PDF X13769XJ2V0CD00 DRAMSDR256M× 8K/64 54pin A10BL PC100 400mil) PC133 A80L PC100 4M84 2M164 upd432836 uPD432836AL 0443 IC 512k*8 sram 450 mil uPD432836L PC133-333
    1999 - uPD72002-11

    Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
    Text: -4532DA726 MC-4532DA727 MC-454DA726 MC-4564DC726 MC-458DA726 MC-458DA727 MC-4516CB64ES MC- 4516CD641ES MC


    Original     		PDF PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD72002-11 uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
    1999 - uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: -4532DA727 MC-454DA726 MC-4564DC726 MC-458DA726 MC-458DA727 MC-4516CB64ES MC- 4516CD641ES MC-458CD641LS MC


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    1998 - PD23C64020

    Abstract: PD45D128442 4M84 PD45D128842 256M5 0443 IC PD23C64000AL 45V16A PD264 A80L
    Text: -4516CD64ES A10B A10BL 2 MC- 4516CD641ES A80 A10 3 2 3 2 3 2 3 2 3 2 100 67 100 67 100 67 100 67 125 100 100 77 16


    Original     		PDF X13769XJ2V0CD00 A10BL 8K/64 256M5 PD45256441 54-pin PC133 PC100 MC-22000 PD23C64020 PD45D128442 4M84 PD45D128842 0443 IC PD23C64000AL 45V16A PD264 A80L
    1999 - free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: No file text available


    Original     		PDF X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    2011 - HY- 214 94V

    Abstract: J45A J28CA j170ca HY- 211 94V J28C HY- 211 94Vo J15A J180A hy 211 94vo
    Text: No file text available


    Original     		PDF E210467 2002/95/EC DO-214AB HY- 214 94V J45A J28CA j170ca HY- 211 94V J28C HY- 211 94Vo J15A J180A hy 211 94vo
    2011 - Not Available

    Abstract: No abstract text available
    Text: No file text available


    Original     		PDF E210467 2002/95/EC DO-214AB MIL-STD-750,
    2004 - MC 150 transistor

    Abstract: 270K 1206 MC 0603 mc 4066 MC 0.063W 0603 1 330R R 670 2K4 0603 240R 12k 1w MC 0.063W 0603 1% 820R resistor 1w 0.5% 240r
    Text: No file text available


    Original     		PDF 400PPM/ 200PPM/ 100PPM/ MC 150 transistor 270K 1206 MC 0603 mc 4066 MC 0.063W 0603 1 330R R 670 2K4 0603 240R 12k 1w MC 0.063W 0603 1% 820R resistor 1w 0.5% 240r
    2005 - Not Available

    Abstract: No abstract text available
    Text: No file text available


    Original     		PDF SMC/DO-214AB
    2003 - 270r

    Abstract: MC 0.1W 0805 1 4K7 IEC E6 E12 E24 SERIES RESISTORS MC 0.1W 0805 5 330R MC 0.063W 0603 1 330R 120R MC 0.1W 0805 1 2K2 MC 0.063W 0603 1 8K2 resistance 4K7 MC 0.063W 0603 1 820R
    Text: No file text available


    Original     		PDF 400PPM/ 200PPM/ 100PPM/ 270r MC 0.1W 0805 1 4K7 IEC E6 E12 E24 SERIES RESISTORS MC 0.1W 0805 5 330R MC 0.063W 0603 1 330R 120R MC 0.1W 0805 1 2K2 MC 0.063W 0603 1 8K2 resistance 4K7 MC 0.063W 0603 1 820R
    bet GP 123

    Abstract: No abstract text available
    Text: No file text available


    Original     		PDF E210467 2002/95/EC bet GP 123
    FZ 51

    Abstract: HY 214A MC J13 "FZ 51" GK-60 GX90 GV 85 D 304 x FZ 5.1 BFP36
    Text: No file text available


    Original     		PDF DO-214AB DO-214AB, MIL-STD-750, EIA-481) 50mVp-p 10/1000u FZ 51 HY 214A MC J13 "FZ 51" GK-60 GX90 GV 85 D 304 x FZ 5.1 BFP36
    2012 - marking code BEV

    Abstract: J15-C L 7 HL 33 GE 644 J60A Bd 141 marking code GGt J36A BD 667 HY 400
    Text: No file text available


    Original     		PDF E210467 2002/95/EC DO-214AB RB500V-40 marking code BEV J15-C L 7 HL 33 GE 644 J60A Bd 141 marking code GGt J36A BD 667 HY 400
    2012 - MC0402

    Abstract: MC00625W040211M MC00625 Thick Film Chip Resistor 0402
    Text: No file text available


    Original     		PDF 400PPM/Â 200PPM/Â 100PPM/Â element14 MC0402 MC00625W040211M MC00625 Thick Film Chip Resistor 0402
    2011 - gf 103 94vo

    Abstract: J210A j170c bet GP 123 20/gf 103 94vo
    Text: No file text available


    Original     		PDF E210467 2002/95/EC gf 103 94vo J210A j170c bet GP 123 20/gf 103 94vo
    2012 - J200A

    Abstract: No abstract text available
    Text: No file text available


    Original     		PDF E210467 2002/95/EC DO-214AB J200A
    2009 - L 7 HL 33 GE 644

    Abstract: J12A J11A mc 741 HY- 211 94V j43a hy 214 J180C J75A J220CA
    Text: No file text available


    Original     		PDF E210467 2002/95/EC DO-214AB MIL-STD-750, L 7 HL 33 GE 644 J12A J11A mc 741 HY- 211 94V j43a hy 214 J180C J75A J220CA
    2005 - HY- 214 94V

    Abstract: hy 214 94vo MC 667 P hy 211 94vo
    Text: No file text available


    Original     		PDF SMC/DO-214AB DO-214AB Solde00 HY- 214 94V hy 214 94vo MC 667 P hy 211 94vo
    ...

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