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    MBT3906 Search Results

    MBT3906 Datasheets (17)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MBT3906DW
    Unknown Dual General Purpose Transistor PNP+PNP Silicon Original PDF 779.61KB 6
    MBT3906DW
    Weitron Dual General Purpose Transistor PNP+PNP Silicon Original PDF 329.33KB 6
    MBT3906DW1
    On Semiconductor Dual General Purpose Transistors Original PDF 101.36KB 6
    MBT3906DW1T1
    E-Tech Electronics Dual General Purpose Transistors Original PDF 733.2KB 10
    MBT3906DW1T1
    Leshan Radio Company Dual General Purpose Transistors Original PDF 429.27KB 10
    MBT3906DW1T1
    Motorola Dual General Purpose Transistors Original PDF 1.25MB 12
    MBT3906DW1(T1)
    Unknown Silicon PNP Transistor Original PDF 429.27KB 10
    MBT3906DW1T1
    On Semiconductor MBT3906 - TRANSISTOR 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, SC-88, 6 PIN, BIP General Purpose Small Signal Original PDF 133.94KB 8
    MBT3906DW1T1
    On Semiconductor Dual General Purpose Transistors Original PDF 101.36KB 6
    MBT3906DW1T1-D
    On Semiconductor Dual General Purpose Transistor Original PDF 103.8KB 8
    MBT3906DW1T1G
    On Semiconductor Dual General Purpose Transistor Original PDF 102.94KB 6
    MBT3906DW1T2G
    On Semiconductor MBT3906 - Dual PNP Bipolar Transistor Original PDF 127.51KB 6
    MMBT3906T
    Shikues Semiconductor Epitaxial Planar Die, Complementary NPN, Lead Free Version, MARKING:2A Original PDF
    MMBT3906
    Shikues Semiconductor Original PDF
    MMBT3906T
    SLKOR Original PDF
    MMBT3906
    Microdiode Semiconductor SOT-23 Plastic-Encapsulate Transistors, PNP, BASE, EMITTER, COLLECTOR Original PDF
    MMBT3906
    SLKOR PNP Switching Transistor, VCEO -40V, VCBO -40V, VEBO -6.0V, Ic -200mA, PD 225mW (FR-5), PD 300mW (Alumina), RΘJA 417°C/W, TJ 150°C. Original PDF
    SF Impression Pixel

    MBT3906 Price and Stock

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    Diodes Incorporated MMBT3906-7-F

    TRANS PNP 40V 0.2A SOT-23-3
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    DigiKey MMBT3906-7-F Reel 129,000 3,000
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    Newark MMBT3906-7-F Cut Tape 14,504 1
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    Bristol Electronics () MMBT3906-7-F 38,139
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    MMBT3906-7-F 1,570 89
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    Rutronik MMBT3906-7-F Reel 5 1
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    Avnet Asia MMBT3906-7-F 18,000 12 Weeks 3,000
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    Avnet Silica MMBT3906-7-F 9,000 14 Weeks 3,000
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    Chip Stock MMBT3906-7-F 72,500
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    Component Electronics, Inc MMBT3906-7-F 3,115
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    IBS Electronics MMBT3906-7-F 1,062,000 3,000
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    New Advantage Corporation MMBT3906-7-F 6,840 1
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    Vyrian MMBT3906-7-F 458,989
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    Win Source Electronics MMBT3906-7-F 60,000
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    PanJit Group MMBT3906_R1_00001

    TRANS PNP 40V 0.2A SOT-23
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    DigiKey () MMBT3906_R1_00001 Cut Tape 57,393 1
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    MMBT3906_R1_00001 Digi-Reel 57,393 1
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    MMBT3906_R1_00001 Reel 48,000 3,000
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    Diodes Incorporated MMBT3906LP-7

    TRANS PNP 40V 0.2A X1-DFN1006-3
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    DigiKey () MMBT3906LP-7 Digi-Reel 38,787 1
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    MMBT3906LP-7 Cut Tape 38,787 1
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    MMBT3906LP-7 Reel 36,000 3,000
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    Newark MMBT3906LP-7 Cut Tape 9,025 5
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    TME MMBT3906LP-7 1
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    Chip Stock MMBT3906LP-7 93,500
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    IBS Electronics MMBT3906LP-7 210,000 3,000
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    New Advantage Corporation MMBT3906LP-7 84,000 1
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    Vyrian MMBT3906LP-7 109,464
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    Win Source Electronics MMBT3906LP-7 81,000
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    Nexperia MMBT3906,215

    TRANS PNP 40V 0.2A TO-236AB
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    DigiKey MMBT3906,215 Reel 24,000 3,000
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    Avnet Americas MMBT3906,215 Reel 324,000 8 Weeks 3,000
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    Mouser Electronics MMBT3906,215 431,661
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    Newark MMBT3906,215 Reel 48,000 3,000
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    TTI MMBT3906,215 Reel 3,903,000 3,000
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    TME MMBT3906,215 8,069 1
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    Chip 1 Exchange MMBT3906,215 1,651
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    Chip Stock MMBT3906,215 33,731
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    New Advantage Corporation MMBT3906,215 264,000 1
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    Comchip Technology Corporation Ltd MMBT3906-G

    TRANS PNP 40V 0.2A SOT-23-3
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    DigiKey () MMBT3906-G Cut Tape 7,362 1
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    MMBT3906-G Digi-Reel 7,362 1
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    MMBT3906-G Reel 6,000 3,000
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    Karl Kruse GmbH & Co KG MMBT3906-G 60,000
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    NAC MMBT3906-G 60,000 1
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    MBT3906 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MBT3906DW General Purpose Transistor PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40


    Original
    MBT3906DW OT-363 SC-88) MBT3906DW OT-363 PDF

    Contextual Info: MBT3906DW General Purpose Transistor PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP M aximum R atings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -40 -40


    Original
    MBT3906DW OT-363 SC-88) MMBT3906DW OT-363 PDF

    Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in


    Original
    MBT3906DW1T1 23/SOT MBT3906DW1T1 363/SC PDF

    1N916

    Abstract: MBT3906DW1T1
    Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in


    Original
    MBT3906DW1T1 MBT3906DW1T1 23/SOT 363/SC r14525 MBT3906DW1T1/D 1N916 PDF

    1N916

    Abstract: MBT3906DW1T1 MBT3906DW1T1G
    Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original
    MBT3906DW1T1 MBT3906DW1T1 OT-23/SOT-323 OT-363 MBT3906DW1T1/D 1N916 MBT3906DW1T1G PDF

    Contextual Info: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications


    Original
    MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 PDF

    EE-43007

    Abstract: EE 23 bobbin vertical MBT3906 diode W1 NCP1055 core EE 25 transformer EE-42211 EE 25 bobbin vertical MC33340 NIS6111
    Contextual Info: DN06023/D Design Note – DN06023/D Universal AC 15 W 4 Cell Charger Device Application Input Voltage Output Power Topology I/O Isolation MBT3906 MC33340 NCP1055 NIS6111 4 Cell NiCd-NiMH Battery Charger Universal 90-264 Vac 15 Watt Flyback Optional Other Specifications


    Original
    DN06023/D MBT3906 MC33340 NCP1055 NIS6111 EE-43007 EE 23 bobbin vertical MBT3906 diode W1 NCP1055 core EE 25 transformer EE-42211 EE 25 bobbin vertical MC33340 NIS6111 PDF

    Contextual Info: MBT3906DW1, MBT3906DW1 Dual General Purpose Transistor The MBT3906DW1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original
    MBT3906DW1, SMBT3906DW1 MBT3906DW1 OT-23/SOT-323 OT-363 AEC-Q101 MBT3906DW1T1/D PDF

    MBT3904DW1T1

    Abstract: SOT 363 NP 1N916 MBT3906DW1T1 MBT3946DW1T1
    Contextual Info: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications


    Original
    MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3904DW1T1 SOT 363 NP 1N916 MBT3906DW1T1 MBT3946DW1T1 PDF

    MBT3906DW1T1G

    Abstract: 1N916
    Contextual Info: MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original
    MBT3906DW1T1G MBT3906DW1T1G OT-23/SOT-323 OT-363 MBT3906DW1T1/D 1N916 PDF

    1N916

    Abstract: MBT3906DW VCE-30
    Contextual Info: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 * “G” Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol


    Original
    MBT3906DW OT-363 SC-88) MBT3906DW OT-363 1N916 VCE-30 PDF

    MBT3904 datasheet

    Abstract: MBT3904 MBT3904 equivalent MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
    Contextual Info: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded


    Original
    MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT 363/SC STYLE00 MBT3904 MBT3904 datasheet MBT3904 equivalent MBT3904DW1T1 MBT3906DW1T1 PDF

    MBT3906DWITI

    Abstract: MBT390 MBT3946DW1 MBT3946DWI MBT3904DW1 i7050 MBT3906DW1T1 MBT3946DW1T1 MBT3904DWITI
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MBT3904DWlT1/D DATA — Dual General Purpose Transistors The MBT3904DW1TI, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed


    Original
    MBT3904DWlT1/D MBT3904DW1TI, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DWI MBT3906DWI MBT3946DWI 14WI-247 MBT3906DWITI MBT390 MBT3946DW1 MBT3904DW1 i7050 MBT3906DW1T1 MBT3946DW1T1 MBT3904DWITI PDF

    Contextual Info: MBT3906DW1T1G, MBT3906DW1T1G Dual General Purpose Transistor The MBT3906DW1T1G device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original
    MBT3906DW1T1G, SMBT3906DW1T1G MBT3906DW1T1G 23/SOTâ MBT3906DW1T1/D PDF

    "dual TRANSISTORs" pnp npn

    Abstract: BC847CPDW1T1 dual pnp BC858CDW1T1
    Contextual Info: Bipolar Transistors General−Purpose Multiple Transistors Device BC846BDW1T1 BC856BDW1T1 BC846BPDW1T1 BC847BDW1T1 BC847CDW1T1 BC857BDW1T1 BC857CDW1T1 BC847BPDW1T1 BC847CPDW1T1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT2222ADW1T1 MBT6429DW1T1 UMZ1NT1 BC848CDW1T1


    Original
    SC-88, OT-363 419B-02 OT-563 63A-01 SO-16 751B-05 "dual TRANSISTORs" pnp npn BC847CPDW1T1 dual pnp BC858CDW1T1 PDF

    Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in


    Original
    MBT3906DW1T1 OT-23/SOT-323 OT-363 MBT3906DW1T1/D PDF

    1N916

    Abstract: MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
    Contextual Info: MOTOROLA Order this document by MBT3904DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed


    Original
    MBT3904DW1T1/D MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 1N916 MBT3904DW1T1 MBT3906DW1T1 PDF

    5070H

    Abstract: MBT3904 datasheet MBT3904 MBT3904DW1T1 MBT3946 MBT3906DW1T1 MBT3946DW1T1
    Contextual Info: Dual General Purpose Transistors MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded


    Original
    MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT 363/SC MBT3904 5070H MBT3904 datasheet MBT3904DW1T1 MBT3946 MBT3906DW1T1 PDF

    1N916

    Abstract: MBT3906DW
    Contextual Info: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 P b Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO


    Original
    MBT3906DW OT-363 SC-88) MBT3906DW OT-363 1N916 PDF

    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded


    Original
    MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 PDF

    MBT3906DW

    Abstract: 1N916 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1
    Contextual Info: MOTOROLA Order this document by MBT3904DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed


    Original
    MBT3904DW1T1/D MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT3906DW 1N916 MBT3904DW1T1 MBT3906DW1T1 PDF

    Contextual Info: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value


    Original
    MBT3906DW OT-363 SC-88) MBT3906DW OT-363 PDF

    Contextual Info: MBT3906DW1T1 Dual General Purpose Transistor The MBT3906DW1T1 device is a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in


    Original
    MBT3906DW1T1 OT-23/SOT-323 OT-363 MBT3906DW1T1 OT-363/SC-88 PDF

    1N916

    Abstract: MBT3906DW
    Contextual Info: MBT3906DW Dual General Purpose Transistor PNP+PNP Silicon 1 2 3 6 5 1 * “G” Lead Pb -Free 4 3 SOT-363(SC-88) 6 5 2 4 PNP+PNP Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol


    Original
    MBT3906DW OT-363 SC-88) MBT3906DW OT-363 1N916 PDF